Abstract: There is provided a technique that includes: (a) performing: (a1) exciting a first oxidizing agent and a first reducing agent into a plasma state and supplying the first oxidizing agent and the first reducing agent thus excited to a substrate, which includes a first surface and a second surface; and (a2) exciting a second reducing agent into a plasma state and supplying the second reducing agent thus excited to the substrate; and (b) heat-treating the substrate subjected to (a).

Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a first oxide layer by modifying a surface of a substrate at a first temperature with a plasma of a first oxygen-containing gas; and (b) forming a second oxide layer thicker than the first oxide layer by heating the substrate to a second temperature higher than the first temperature and modifying the surface of the substrate, on which the first oxide layer is formed, with a plasma of a second oxygen-containing gas.

Abstract: There is provided a technique that includes: preparing the substrate including a silicon-containing film and a metal film composed of a metal element, which includes at least one selected from the group of tungsten, titanium, ruthenium, and molybdenum and, which are formed on a surface of the substrate; and simultaneously performing modifying the metal film and modifying the silicon-containing film by supplying reactive species, which are generated by plasma-exciting a processing gas containing hydrogen and oxygen, to the substrate.

Abstract: There is provided a technique that includes modifying a deposited film, which is formed on an inner surface of a reaction container, into a film including an oxide layer and a nitride layer by performing a cycle a predetermined number of times, the cycle including: (a) oxidizing the deposited film by supplying an oxygen-containing gas into the reaction container and plasma-exciting the oxygen-containing gas; and (b) nitriding the deposited film by supplying a nitrogen-containing gas into the reaction container and plasma-exciting the nitrogen-containing gas.

Abstract: There is provided a technique that includes: loading a substrate having a metal film composed of a single metal element formed on a surface of the substrate into a process chamber; generating reactive species by plasma-exciting a processing gas containing hydrogen and oxygen; and modifying the metal film by supplying the reactive species to the substrate, wherein in the act of modifying the metal film, the metal film is modified such that a crystal grain size of the metal element constituting the metal film is larger than that before performing the act of modifying the metal film.

Abstract: A method of processing a substrate includes: (a) preparing a substrate having a nitrogen-containing film and an oxygen-containing film on a surface of the substrate; and (b) modifying a surface of the nitrogen-containing film to be nitrided by supplying an active species containing nitrogen and an active species containing hydrogen, or selectively forming hydroxyl group termination on a surface of the oxygen-containing film by supplying at least one selected from the group of an active species containing hydrogen, an active species containing hydrogen and oxygen, and an active species containing hydrogen and nitrogen.

Abstract: A method of processing a substrate, includes: (a) modifying a surface of the substrate into a first oxide layer by supplying, to the substrate, a reactive species generated by plasma-exciting a first processing gas in which oxygen and hydrogen are contained and a ratio of hydrogen in the oxygen and hydrogen of the first processing gas is a first ratio; and (b) modifying the first oxide layer into a second oxide layer by supplying, to the substrate, a reactive species generated by plasma-exciting a second processing gas in which oxygen is contained and hydrogen is optionally contained and a ratio of hydrogen in the oxygen and hydrogen of the second processing gas is a second ratio smaller than the first ratio.

Abstract: There is provided a technique that includes a process container including a cylindrical portion, a process chamber being formed in the process container and a substrate being arranged in the process chamber; a gas supplier configured to supply a processing gas to the process chamber; an electrode installed in a spiral shape to surround the process container from outside of the cylindrical portion of the process container and supplied with high-frequency power to plasma-excite the processing gas; and a mover configured to be capable of moving the electrode with respect to the process container in a radial direction of the cylindrical portion.

Abstract: A method of manufacturing a semiconductor device includes: (a) generating a reactive species by plasma-exciting a process gas containing oxygen and hydrogen; and (b) supplying the reactive species to a substrate and oxidizing surfaces of a silicon film and a silicon nitride film formed to be exposed respectively on the substrate, wherein a ratio of oxygen and hydrogen contained in the process gas is adjusted such that a ratio of a thickness of a second oxide layer formed by oxidizing the surface of the silicon nitride film to a thickness of a first oxide layer formed by oxidizing the surface of the silicon film in (b) becomes a predetermined thickness ratio.

Abstract: The present disclosure provides a method of manufacturing a semiconductor device, including: (a) loading a substrate with a film formed on a surface thereof into a process vessel; (b) generating a reactive species containing oxygen and a reactive species of a rare gas by converting a mixed gas containing the rare gas and an oxygen-containing gas into a plasma state; and (c) oxidizing the film by supplying the reactive species containing oxygen to the substrate together with the reactive species of the rare gas. In (b), a partial pressure ratio PN/PT, which is a ratio of a partial pressure PN of the rare gas in the process vessel to a total pressure PT of the mixed gas in the process vessel, is set to a value of 0.4 or less.

Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: modifying a surface of a substrate into an impurity-containing layer by performing: (a) supplying an impurity-containing gas containing an impurity and a dilution gas into a process chamber in which the substrate is accommodated; (b) plasma-exciting the impurity-containing gas and the dilution gas; and (c) supplying an active species containing the impurity generated by plasma-exciting the impurity-containing gas and the dilution gas to the substrate, wherein a flow rate ratio of the impurity-containing gas to the dilution gas is controlled in (a) such that a partial pressure of the impurity-containing gas in the process chamber is set to a predetermined partial pressure less than a partial pressure at which the impurity-containing gas forms deposits containing a polymer in the process chamber.

Abstract: A method of manufacturing a semiconductor device includes accommodating a substrate in a process chamber; supplying a first gas containing oxygen into the process chamber; generating plasma in the process chamber by exciting the first gas; supplying a second gas containing hydrogen into the process chamber and adjusting a hydrogen concentration distribution in the process chamber according to a density distribution of the plasma in the process chamber; and processing the substrate with oxidizing species generated by the plasma.

Abstract: Described herein is a technique capable of capable of improving characteristics of an oxide film formed on a substrate in a process of modifying the oxide film. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: modifying an oxide film formed on a substrate by performing: (a) supplying a reactive species containing an element of a rare gas generated by converting a gas containing the rare gas into a plasma state to the oxide film; and (b) after (a), supplying a reactive species containing oxygen generated by converting an oxygen-containing gas different from the gas containing the rare gas into a plasma state to the oxide film.

Abstract: There is provided a technique that includes: (a) loading a substrate including a base and a first film containing silicon and formed on the base into a process container; (b) converting a modifying gas containing helium into plasma to generate reactive species of helium; and (c) supplying the modifying gas containing the reactive species of helium to a surface of the substrate to respectively modify the first film and an interface layer of the base constituting an interface with the first film.

Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a first oxide layer by modifying a surface of a substrate at a first temperature with a plasma of a first oxygen-containing gas; and (b) forming a second oxide layer thicker than the first oxide layer by heating the substrate to a second temperature higher than the first temperature and modifying the surface of the substrate, on which the first oxide layer is formed, with a plasma of a second oxygen-containing gas.

Abstract: There is provided a technique that includes: loading a substrate having a metal film composed of a single metal element formed on a surface of the substrate into a process chamber; generating reactive species by plasma-exciting a processing gas containing hydrogen and oxygen; and modifying the metal film by supplying the reactive species to the substrate, wherein in the act of modifying the metal film, the metal film is modified such that a crystal grain size of the metal element constituting the metal film is larger than that before performing the act of modifying the metal film.

Abstract: There is provided a technique that includes: (a) loading a substrate including a base and a first film containing silicon and formed on the base into a process container; (b) converting a modifying gas containing helium into plasma to generate reactive species of helium; and (c) supplying the modifying gas containing the reactive species of helium to a surface of the substrate to respectively modify the first film and an interface layer of the base constituting an interface with the first film.