Abstract: An organic electroluminescent display device has a display region where image display is performed and a frame region surrounding said display region. The organic electroluminescent display device includes: a first substrate; a second substrate disposed facing said first substrate; an organic electroluminescent element provided on said first substrate in the display region; and a sealing film on said first substrate in the frame and display regions so as to cover said organic electroluminescent element, a surface of the sealing film in the frame region being hydrophilic.

Abstract: A barrier film configured to reduce degradation of an organic EL element includes a first inorganic film, a second inorganic film, and a third inorganic film which are provided in order from a base substrate, a first organic film between the first inorganic film and the second inorganic film, and a second organic film between the second inorganic film and the third inorganic film. The first organic film has a plurality of first through holes formed therein so that the first inorganic film is in contact with the second inorganic film through the first through holes. The second organic film has a plurality of second through holes formed therein so that the second inorganic film is in contact with the third inorganic film through the second through holes.

Abstract: The present invention includes forming an organic EL element on a TFT substrate, forming a sealing film on the TFT substrate so as to cover the organic EL element, performing a hydrophilic treatment on a surface of the sealing film in a frame region, forming a sealing material on a CF substrate, bonding the TFT substrate and the CF substrate together via the sealing material by placing the sealing material on a surface of the sealing film in the frame region in a vacuum, and returning the vacuum state to atmospheric pressure.

Abstract: The method is for producing a flexible display device, the flexible display device including a first flexible base material and a second flexible base material which are attached to each other by a first adhesive layer, the method including the following steps (1) to (4) in the order given: (1) forming a conductive line and terminals; (2) forming a removal layer to directly cover the terminals; (3) sequentially arranging multiple layers including the first adhesive layer and the second flexible base material, with higher interfacial adhesions present between the removal layer and the second flexible base material than the interfacial adhesion between the removal layer and the terminals; and (4) exposing the terminals.

Abstract: A barrier film configured to reduce degradation of an organic EL element includes a first inorganic film, a second inorganic film, and a third inorganic film which are provided in order from a base substrate, a first organic film between the first inorganic film and the second inorganic film, and a second organic film between the second inorganic film and the third inorganic film. The first organic film has a plurality of first through holes formed therein so that the first inorganic film is in contact with the second inorganic film through the first through holes. The second organic film has a plurality of second through holes formed therein so that the second inorganic film is in contact with the third inorganic film through the second through holes.

Abstract: The present invention provides an excellent heating tool in which the generation of unpleasant odors is suppressed. The present invention also provides an excellent heating tool in which changes in aroma are suppressed. The present invention further provides an excellent heating tool in which the generation of unpleasant odors and changes in aroma are suppressed even after storage. The present invention provides a method for suppressing the generation of unpleasant odors and changes in aroma in a heating tool. The present invention provides a heating tool comprising an exothermic composition containing a metal ion sequestrant, an oxidizable metal powder, a water-soluble salt, and water, wherein at least the exothermic composition is housed in an air-permeable container bag.

Abstract: The present invention includes forming an organic EL element on a TFT substrate, forming a sealing film on the TFT substrate so as to cover the organic EL element, performing a hydrophilic treatment on a surface of the sealing film in a frame region, forming a sealing material on a CF substrate, bonding the TFT substrate and the CF substrate together via the sealing material by placing the sealing material on a surface of the sealing film in the frame region in a vacuum, and returning the vacuum state to atmospheric pressure.

Abstract: Provided is a superior heating tool which is capable of producing desired aromatic properties upon usage even after being stored for a long period of time. A heating tool comprising: an exothermic composition containing an oxidation accelerator having an iodine adsorption of not higher than 500 mg/g, an oxidizable metal powder, and water; and a fragrance, wherein at least the exothermic composition is housed in a container bag having air permeability.

Abstract: In a method of manufacturing a semiconductor device of the invention, a rigid substrate which supports one or more semiconductor elements on a surface of the substrate and is clamped between an upper mold and a lower mold of an encapsulation mold at a time of resin encapsulation is provided, so that a vent-end edge portion of the substrate corresponding to a vent end of the encapsulation mold has a thickness smaller than a thickness of other portions of the substrate. The substrate is disposed in the encapsulation mold, and resin is injected into a cavity between the upper mold and the substrate to encapsulate the semiconductor elements with the resin.

Abstract: The present invention provides a hot dip galvanized composite high strength steel sheet excellent in shapeability and hole enlargement ability and a method of production of the same, that is, a hot dip galvanized composite high strength steel sheet excellent in shapeability and hole enlargement ability containing C: 0.01 to 0.3%, Si: 0.005 to 0.6%, Mn: 0.1 to 3.3%, P: 0.001 to 0.06%, S: 0.001 to 0.01%, Al: 0.01 to 1.8%, and N: 0.0005 to 0.01% and having a metal structure of ferrite and, by area rate, 5% to 60% of tempered martensite and a method of production of the same comprising hot rolling, then cold rolling a slab including the above ingredients, heating the sheet in the hot dip galvanization heating process to Ac1 l to Ac3+100° C., holding it there for 30 seconds to 30 minutes, then cooling it by a 1° C./s or higher cooling rate to 450 to 600° C., hot dip galvanizing it at that temperature, then cooling it at a 1° C.

Abstract: In a method of manufacturing a semiconductor device of the invention, a rigid substrate which supports one or more semiconductor elements on a surface of the substrate and is clamped between an upper mold and a lower mold of an encapsulation mold at a time of resin encapsulation is provided, so that a vent-end edge portion of the substrate corresponding to a vent end of the encapsulation mold has a thickness smaller than a thickness of other portions of the substrate. The substrate is disposed in the encapsulation mold, and resin is injected into a cavity between the upper mold and the substrate to encapsulate the semiconductor elements with the resin.

Abstract: In a method of manufacturing a semiconductor device of the invention, a rigid substrate which supports one or more semiconductor elements on a surface of the substrate and is clamped between an upper mold and a lower mold of an encapsulation mold at a time of resin encapsulation is provided, so that a vent-end edge portion of the substrate corresponding to a vent end of the encapsulation mold has a thickness smaller than a thickness of other portions of the substrate. The substrate is disposed in the encapsulation mold, and resin is injected into a cavity between the upper mold and the substrate to encapsulate the semiconductor elements with the resin.

Abstract: In a method of manufacturing a semiconductor device of the invention, a rigid substrate which supports one or more semiconductor elements on a surface of the substrate and is clamped between an upper mold and a lower mold of an encapsulation mold at a time of resin encapsulation is provided, so that a vent-end edge portion of the substrate corresponding to a vent end of the encapsulation mold has a thickness smaller than a thickness of other portions of the substrate. The substrate is disposed in the encapsulation mold, and resin is injected into a cavity between the upper mold and the substrate to encapsulate the semiconductor elements with the resin.