Patents by Inventor Yukichi Takamatsu
Yukichi Takamatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20020160112Abstract: There is disclosed a chemical vapor deposition apparatus for a semiconductor film, which comprises a horizontal tubular reactor, a susceptor, a heater, a feed gas introduction portion and a reaction gas exhaust portion, wherein the constitution of the apparatus is such that part of the tubular reactor walls inclines downward from the upstream side of the feed gas passageway towards the downstream side thereof so as to change the direction of the gas stream to an oblique downward direction or is such that the spacing between the susceptor and the tubular reactor wall in opposition thereto is made smaller than the vertical spacing in the tubular reactor wall from a gas feed port in the feed gas introduction portion to the upstream side end of the feed gas passageway for the susceptor. Also disclosed herein a chemical vapor deposition method using the apparatus.Type: ApplicationFiled: February 22, 2002Publication date: October 31, 2002Applicant: Japan Pionics Co., LtdInventors: Shiro Sakai, Yukichi Takamatsu, Yuji Mori, Hong Xing Wang, Yoshiyasu Ishihama, Yutaka Amijima
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Patent number: 6473563Abstract: There are disclosed a vaporizer wherein at least a portion of a CVD material feed portion in contact with a CVD material is constituted of a corrosion resistant synthetic resin; and an apparatus for vaporizing and supplying which comprises a cooler and the vaporizer wherein the inside of the CVD material feed portion of the vaporizer and the surface on the side of the vaporization chamber of the CVD material feed portion are constituted of a corrosion resistant synthetic resin; the feed portion in contact with the outside of the vaporizer is constituted of a metal; and the CVD material feed portion which is constituted of a metal and which undergoes heat transfer from the heating means upon heating the vaporization chamber can be cooled with a cooler.Type: GrantFiled: November 13, 2001Date of Patent: October 29, 2002Assignee: Japan Pionics Co., Ltd.Inventors: Yukichi Takamatsu, Takeo Yoneyama, Koji Kiriyama, Akira Asano, Kazuaki Tonari, Mitsuhiro Iwata
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Patent number: 6461407Abstract: Disclosed are a method for supplying a liquid raw material wherein the liquid raw material is deaerated and supplied from a liquid raw material container to a liquid flow control section, the method comprising passing the liquid raw material, supplied from a liquid raw material container by the pressure of a first inert gas, inside of a gas permeable synthetic resin tube, passing a second inert gas having a lower permeability into the synthetic resin tube than the first inert gas along the external surface of the synthetic resin tube whereby the first inert gas dissolved in the liquid raw material is allowed to penetrate into the outside of the synthetic resin tube and then supplying the liquid raw material to the liquid flow control section and an apparatus for supplying a liquid raw material which apparatus is used in the method. The invention ensures that inert gas dissolved in a liquid raw material can be removed easily and efficiently in a semiconductor manufacturing process using a liquid raw material.Type: GrantFiled: November 30, 2000Date of Patent: October 8, 2002Assignee: Japan Pionics Co., Ltd.Inventors: Yukichi Takamatsu, Takeo Yoneyama, Yoshiyasu Ishihama, Akira Asano
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Publication number: 20020067917Abstract: There are disclosed a vaporizer wherein at least a portion of a CVD material feed portion in contact with a CVD material is constituted of a corrosion resistant synthetic resin; and an apparatus for vaporizing and supplying which comprises a cooler and the vaporizer wherein the inside of the CVD material feed portion of the vaporizer and the surface on the side of the vaporization chamber of the CVD material feed portion are constituted of a corrosion resistant synthetic resin; the feed portion in contact with the outside of the vaporizer is constituted of a metal; and the CVD material feed portion which is constituted of a metal and which undergoes heat transfer from the heating means upon heating the vaporization chamber can be cooled with a cooler.Type: ApplicationFiled: November 13, 2001Publication date: June 6, 2002Applicant: Japan Pionics Co., Ltd.Inventors: Yukichi Takamatsu, Takeo Yoneyama, Koji Kiriyama, Akira Asano, Kazuaki Tonari, Mitsuhiro Iwata
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Publication number: 20020061272Abstract: There are disclosed a process for cleaning a harmful gas which comprises bringing the harmful gas containing as a harmful component, an organosilicon compound represented by the general formula: CH2CH-SiR3, CH2CH-Si(OR)3, CH2CHCH2 -SiR3 or CH2 CHCH2-Si(OR)3, wherein R indicates a saturated hydrocarbon group or an aromatic compound group, into contact with a cleaning agent comprising activated carbon adhesively incorporated with at least one species selected from the group consisting of bromine, iodine, a metal bromide and a metal iodide in which the metal is exemplified by copper, lithium, sodium, potassium, magnesium, calcium, strontium, manganese, iron, cobalt, nickel, zinc, aluminum and tin; and a cleaning agent comprising the same. The cleaning process and the cleaning agent enable to practically clean a harmful gas which is exhausted from a semiconductor manufacturing process and the like by the use of a dry cleaning process.Type: ApplicationFiled: September 21, 2001Publication date: May 23, 2002Applicant: Japan Pionics Co., Ltd.Inventors: Kenji Otsuka, Yukichi Takamatsu, Youji Nawa, Kazuaki Tonari
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Publication number: 20020042191Abstract: There are disclosed an apparatus and a method for chemical vapor deposition for a semiconductor film and the like, wherein a feed gas is supplied in a horizontal tubular reactor in the direction parallel to a substrate; a forcing gas is supplied therein in the direction perpendicular to the substrate; and the flow rate per unit area of the forcing gas which is supplied from a forcing gas introduction portion into the reactor is made lower in the central portion of the forcing gas introduction portion than in the peripheral portion thereof, or lower in the middle of a feed gas passageway than at both the end portions of the passageway.Type: ApplicationFiled: September 26, 2001Publication date: April 11, 2002Applicant: Japan Pionics Co., Ltd.Inventors: Shiro Sakai, Yukichi Takamatsu, Yuji Mori, Hiroyuki Naoi, Hong Xing Wang, Yoshiyasu Ishihama, Yutaka Amijima
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Publication number: 20010021593Abstract: A chemical vapor deposition apparatus for forming a semiconductor film, which includes a lateral reaction tube including a susceptor for placing a substrate thereon; a round-shaped heater for heating the substrate; and a gas inlet for introducing a gas containing at least one source gas, the inlet being provided so as to be substantially parallel to the substrate, wherein the heating density of an upstream portion, with respect to the flow of the gas, of the round-shaped heater is higher than that of the remaining portion of the heater. A chemical vapor deposition process employing the chemical vapor deposition apparatus is also disclosed.Type: ApplicationFiled: February 26, 2001Publication date: September 13, 2001Applicant: Japan Pionics Co., Ltd.Inventors: Shiro Sakai, Koichi Kitahara, Yukichi Takamatsu, Yuji Mori
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Publication number: 20010002573Abstract: Disclosed are a method for supplying a liquid raw material wherein the liquid raw material is deaerated and supplied from a liquid raw material container to a liquid flow control section, the method comprising passing the liquid raw material, supplied from a liquid raw material container by the pressure of a first inert gas, inside of a gas permeable synthetic resin tube, passing a second inert gas having a lower permeability into the synthetic resin tube than the first inert gas along the external surface of the synthetic resin tube whereby the first inert gas dissolved in the liquid raw material is allowed to penetrate into the outside of the synthetic resin tube and then supplying the liquid raw material to the liquid flow control section and an apparatus for supplying a liquid raw material which apparatus is used in the method. The invention ensures that inert gas dissolved in a liquid raw material can be removed easily and efficiently in a semiconductor manufacturing process using a liquid raw material.Type: ApplicationFiled: November 30, 2000Publication date: June 7, 2001Inventors: Yukichi Takamatsu, Takeo Yoneyama, Yoshiyasu Ishihama, Akira Asano
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Patent number: 6155540Abstract: An apparatus for vaporizing a liquid material and supplying the material in a gas phase, in which a liquid material for CVD is introduced into a vaporizer at a controlled flow rate, atomized by an ultrasonic atomizing device disposed at the inside or the outside of the vaporizer, heated by a circular flow of a carrier gas and vaporized. When a liquid material for CVD is supplied to a CVD apparatus in the production of semiconductors, the concentration of the material is controlled easily in the vaporization, the concentration of the material in the gas can be changed quickly in response with the change in the flow rate of the material, decomposition of the material does not occur and the operating condition of a CVD apparatus is not restricted.Type: GrantFiled: September 23, 1998Date of Patent: December 5, 2000Assignee: Japan Pionics Co., Ltd.Inventors: Yukichi Takamatsu, Takeo Yoneyama, Yoshiyasu Ishihama
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Patent number: 6106898Abstract: A process for preparing a nitride film by a chemical vapor deposition method, which entails reacting a material gas including tert-butyl hydrazene as the main component as the main component of a nitrogen source with a material gas of an organometallic compound, a metal halide or a metal hydride to deposit the nitride film on a substrate.Type: GrantFiled: September 23, 1998Date of Patent: August 22, 2000Assignee: Japan Pionics, Co., Ltd.Inventors: Yukichi Takamatsu, Takeo Yoneyama, Yoshiyasu Ishihama
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Patent number: 6100415Abstract: A purified alkoxide from which volatile impurities causing polymerization and degradation of the alkoxide are removed to extremely low concentrations. The purified alkoxide can be obtained by distilling a crude alkoxide and stripping the distilled liquid alkoxide by applying ultrasonic vibration while passing an inert gas through the liquid alkoxide. A high quality thin insulating film excellent in flatness with few defects such as voids can be obtained by using the purified alkoxide of the present invention as a CVD material.Type: GrantFiled: March 15, 1999Date of Patent: August 8, 2000Assignee: Japan Pionics Co., Ltd.Inventors: Yukichi Takamatsu, Takeo Yoneyama, Yoshiyasu Ishihama
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Patent number: 5468894Abstract: By reacting Si(OR).sub.4 with HF, FSi (OR).sub.3 of high purity can be obtained easily and economically.Type: GrantFiled: March 22, 1994Date of Patent: November 21, 1995Assignee: TRI Chemical Laboratory Inc.Inventors: Ryuichi Yamaguchi, Koichi Kiso, Kiyoshi Tazuke, Hideaki Machida, Katsuhiro Mihirogi, Yukichi Takamatsu