Abstract: A processing solution containing solvent and solute is supplied onto a substrate (9). The processing solution transforms into a particle retention layer as a result of at least part of the solvent being volatilized from the processing solution and causing the processing solution to solidify or harden. The particle retention layer is removed from the substrate (9) by supplying a removal liquid onto the substrate (9). A solute component contained in the particle retention layer is insoluble or poorly soluble in the removal liquid, whereas the solvent is soluble. The solute component contained in the particle retention layer has the property of being altered to become soluble in the removal liquid when heated to a temperature higher than or equal to an alteration temperature. The removal liquid is supplied after the formation of the particle retention layer, without undergoing a process of alternating the solute component.

Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid to a patterned surface of a substrate having the patterned surface with projections and recesses, a processing film forming step of solidifying or curing the processing liquid supplied to the patterned surface to form, so as to follow the projections and the recesses of the patterned surface, a processing film which holds a removal object present on the patterned surface and a removing step of supplying a peeling liquid to the patterned surface to peel the processing film from the patterned surface together with the removal object, thereby removing the processing film from the substrate, while such a state is kept that the removal object is held by the processing film.

Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid having a solute and a solvent to a front surface of a substrate, a processing film forming step of forming on the front surface of the substrate a processing film which holds a removal object present on the front surface of the substrate by solidifying or curing the processing liquid supplied to the front surface of the substrate, and a peeling step of peeling the processing film from the front surface of the substrate together with the removal object by supplying a peeling liquid to the front surface of the substrate, and the peeling step includes a penetrating hole forming step of forming a penetrating hole on the processing film by dissolving partially the processing film in the peeling liquid.

Abstract: A substrate processing method includes a first processing liquid supplying step of supplying a first processing liquid to an upper surface of the substrate, a holding layer forming step of solidifying or curing the first processing liquid to form a particle holding layer on the upper surface of the substrate, a holding layer removing step of peeling and removing the particle holding layer from the upper surface of the substrate, a liquid film forming step of forming, after removing the particle holding layer from the substrate, a liquid film of the second processing liquid, a solidifying step of cooling the liquid film to a temperature not more than a melting point of the sublimable substance to make the liquid film solidify on the substrate and form a solid film, and a sublimating step of sublimating and thereby removing the solid film from the substrate.

Abstract: A substrate processing method includes a first processing liquid supplying step of supplying a first processing liquid to an upper surface of a substrate, a holding-layer forming step of solidifying or curing the first processing liquid to form a particle holding layer on the upper surface of the substrate, a holding-layer removing step of peeling and removing the particle holding layer from the upper surface of the substrate, a liquid film forming step of forming, after removal of the particle holding layer from the substrate, a liquid film of a second processing liquid, a gas phase layer forming step of forming a gas phase layer for holding the liquid film between the upper surface of the substrate and the liquid film, and a liquid film removing step of removing the second processing liquid from the upper surface of the substrate by moving the liquid film on the gas phase layer.

Abstract: A substrate processing apparatus includes: a substrate holder to hold a substrate in a horizontal posture while rotating the substrate about a vertical rotary axis passing through the center of a plane of the substrate; a guard member having a shape extending along at least part of a surface peripheral area of the substrate, the guard member being placed in a position close to the surface peripheral area of the substrate held by the substrate holder in a noncontact manner; a cup being a tubular member with an open top end, the cup being provided so as to surround the substrate held by the substrate holder and the guard member together; and a nozzle from which a processing liquid is discharged to the surface peripheral area of the substrate held by the substrate holder. The nozzle is placed on a side opposite the cup with respect to at least part of the guard member.

Abstract: A substrate cleaning method includes a processing liquid supplying step which supplies a processing liquid that contains a solute and a volatile solvent to an upper surface of a substrate, a film forming step in which the solvent is at least partially volatilized from the processing liquid supplied to the upper surface of the substrate, by which the processing liquid is solidified or hardened to form a particle holding layer on the upper surface of the substrate, and a removal step in which a peeling liquid for peeling the particle holding layer is supplied to the upper surface of the substrate, thereby peeling and removing the particle holding layer from the upper surface of the substrate.

Abstract: A substrate processing apparatus includes: a substrate holder to hold a substrate in a horizontal posture while rotating the substrate about a vertical rotary axis passing through the center of a plane of the substrate; a guard member having a shape extending along at least part of a surface peripheral area of the substrate, the guard member being placed in a position close to the surface peripheral area of the substrate held by the substrate holder in a noncontact manner; a cup being a tubular member with an open top end, the cup being provided so as to surround the substrate held by the substrate holder and the guard member together; and a nozzle from which a processing liquid is discharged to the surface peripheral area of the substrate held by the substrate holder. The nozzle is placed on a side opposite the cup with respect to at least part of the guard member.

Abstract: A substrate processing apparatus includes a substrate holder, and a discharge head for peripheral area from which a fluid is discharge toward a surface peripheral area of the substrate held on the substrate holder. The discharge head for peripheral area includes multiple nozzles, and a support part that supports the nozzles integrally. The nozzles include a processing liquid nozzle from which a processing liquid is discharged toward the surface peripheral area, and a gas nozzle from which gas is discharged toward the surface peripheral area. The gas nozzle is placed upstream of a rotative direction of the substrate relative to the processing liquid nozzle.

Abstract: A substrate processing apparatus includes a substrate holder, and a discharge head for peripheral area from which a fluid is discharge toward a surface peripheral area of the substrate held on the substrate holder. The discharge head for peripheral area includes multiple nozzles, and a support part that supports the nozzles integrally. The nozzles include a processing liquid nozzle from which a processing liquid is discharged toward the surface peripheral area, and a gas nozzle from which gas is discharged toward the surface peripheral area. The gas nozzle is placed upstream of a rotative direction of the substrate relative to the processing liquid nozzle.

Abstract: A substrate processing apparatus includes: a substrate holder to hold a substrate in a horizontal posture while rotating the substrate about a vertical rotary axis passing through the center of a plane of the substrate; a guard member having a shape extending along at least part of a surface peripheral area of the substrate, the guard member being placed in a position close to the surface peripheral area of the substrate held by the substrate holder in a noncontact manner; a cup being a tubular member with an open top end, the cup being provided so as to surround the substrate held by the substrate holder and the guard member together; and a nozzle from which a processing liquid is discharged to the surface peripheral area of the substrate held by the substrate holder. The nozzle is placed on a side opposite the cup with respect to at least part of the guard member.

Abstract: A substrate processing apparatus includes a substrate holder, and a discharge head for peripheral area from which a fluid is discharge toward a surface peripheral area of the substrate held on the substrate holder. The discharge head for peripheral area includes multiple nozzles, and a support part that supports the nozzles integrally. The nozzles include a processing liquid nozzle from which a processing liquid is discharged toward the surface peripheral area, and a gas nozzle from which gas is discharged toward the surface peripheral area. The gas nozzle is placed upstream of a rotative direction of the substrate relative to the processing liquid nozzle.

Abstract: A substrate treatment method for removing a resist from a front surface of a substrate is provided. The method includes: a liquid mixture film forming step of forming a liquid film of a liquid mixture of a sulfuric acid-containing liquid and an organic solvent on a front surface of a substrate held by a substrate holding unit; and an infrared radiation applying step of providing a heater in opposed relation to the front surface of the substrate and applying infrared radiation emitted from the heater to the front surface of the substrate on which the liquid film of the liquid mixture is retained.