Abstract: A position measurement device measures the position of a position measurement mark formed on the lower surface of a reticle, thereby measuring the position of the reticle. A position measurement device measures the position of the position measurement mark formed on the lower surface of a lower lid, thereby measuring the position of the lower lid. The relative displacement of the reticle and lower lid is known when the position of the reticle and the position of the lower lid are known. Therefore, when the lower lid having the reticle loaded thereon is carried with a carrying device and set in an exposure device, the stop position of the lower lid is determined by taking this displacement into account. As a result, the reticle can be correctly set in the exposure device.

Abstract: A position measurement device measures the position of a position measurement mark formed on the lower surface of a reticle, thereby measuring the position of the reticle. A position measurement device measures the position of the position measurement mark formed on the lower surface of a lower lid, thereby measuring the position of the lower lid. The relative displacement of the reticle and lower lid is known when the position of the reticle and the position of the lower lid are known. Therefore, when the lower lid having the reticle loaded thereon is carried with a carrying device and set in an exposure device, the stop position of the lower lid is determined by taking this displacement into account. As a result, the reticle can be correctly set in the exposure device.

Abstract: A position measurement device 29 measures the position of a position measurement mark 26 formed on the lower surface of a reticle 1, thereby measuring the position of the reticle 1. A position measurement device 30 measures the position of the position measurement mark 27 formed on the lower surface of a lower lid 2b, thereby measuring the position of the lower lid 2b. The relative displacement of the reticle 1 and lower lid 2b is known when the position of the reticle 1 and the position of the lower lid 2b are known. Therefore, when the lower lid 2b having the reticle 1 loaded thereon is carried with a carrying device and set in an exposure device, the stop position of the lower lid 2b is determined by taking this displacement into account. As a result, the reticle 1 can be correctly set in the exposure device.

Abstract: A position measurement device 29 measures the position of a position measurement mark 26 formed on the lower surface of a reticle 1, thereby measuring the position of the reticle 1. A position measurement device 30 measures the position of the position measurement mark 27 formed on the lower surface of a lower lid 2b, thereby measuring the position of the lower lid 2b. The relative displacement of the reticle 1 and lower lid 2b is known when the position of the reticle 1 and the position of the lower lid 2b are known. Therefore, when the lower lid 2b having the reticle 1 loaded thereon is carried with a carrying device and set in an exposure device, the stop position of the lower lid 2b is determined by taking this displacement into account. As a result, the reticle 1 can be correctly set in the exposure device.

Abstract: A position measurement device 29 measures the position of a position measurement mark 26 formed on the lower surface of a reticle 1, thereby measuring the position of the reticle 1. A position measurement device 30 measures the position of the position measurement mark 27 formed on the lower surface of a lower lid 2b, thereby measuring the position of the lower lid 2b. The relative displacement of the reticle 1 and lower lid 2b is known when the position of the reticle 1 and the position of the lower lid 2b are known. Therefore, when the lower lid 2b having the reticle 1 loaded thereon is carried with a carrying device and set in an exposure device, the stop position of the lower lid 2b is determined by taking this displacement into account. As a result, the reticle 1 can be correctly set in the exposure device.

Abstract: The purpose of the invention is to provide an improved electron beam apparatus with improvements in throughput, accuracy, etc. One of the characterizing features of the electron beam apparatus of the present invention is that it has a plurality of optical systems, each of which comprises a primary electron optical system for scanning and irradiating a sample with a plurality of primary electron beams; a detector device for detecting a plurality of secondary beams emitted by irradiating the sample with the primary electron beams; and a secondary electron optical system for guiding the secondary electron beams from the sample to the detector device; all configured so that the plurality of optical systems scan different regions of the sample with their primary electron beams, and detect the respective secondary electron beams emitted from each of the respective regions. This is what makes higher throughput possible.

Abstract: The purpose of the invention is to provide an improved electron beam apparatus with improvements in throughput, accuracy, etc. One of the characterizing features of the electron beam apparatus of the present invention is that it has a plurality of optical systems, each of which comprises a primary electron optical system for scanning and irradiating a sample with a plurality of primary electron beams; a detector device for detecting a plurality of secondary beams emitted by irradiating the sample with the primary electron beams; and a secondary electron optical system for guiding the secondary electron beams from the sample to the detector device; all configured so that the plurality of optical systems scan different regions of the sample with their primary electron beams, and detect the respective secondary electron beams emitted from each of the respective regions. This is what makes higher throughput possible.

Abstract: The purpose of the invention is to provide an improved electron beam apparatus with improvements in throughput, accuracy, etc.. One of the characterizing features of the electron beam apparatus of the present invention is that it has a plurality of optical systems, each of which comprises a primary electron optical system for scanning and irradiating a sample with a plurality of primary electron beams; a detector device for detecting a plurality of secondary beams emitted by irradiating the sample with the primary electron beams; and a secondary electron optical system for guiding the secondary electron beams from the sample to the detector device; all configured so that the plurality of optical systems scan different regions of the sample with their primary electron beams, and detect the respective secondary electron beams emitted from each of the respective regions. This is what makes higher throughput possible.

Abstract: A position measurement device 29 measures the position of a position measurement mark 26 formed on the lower surface of a reticle 1, thereby measuring the position of the reticle 1. A position measurement device 30 measures the position of the position measurement mark 27 formed on the lower surface of a lower lid 2b, thereby measuring the position of the lower lid 2b. The relative displacement of the reticle 1 and lower lid 2b is known when the position of the reticle 1 and the position of the lower lid 2b are known. Therefore, when the lower lid 2b having the reticle 1 loaded thereon is carried with a carrying device and set in an exposure device, the stop position of the lower lid 2b is determined by taking this displacement into account. As a result, the reticle 1 can be correctly set in the exposure device.

Abstract: The purpose of the invention is to provide an improved electron beam apparatus with improvements in throughput, accuracy, etc. One of the characterizing features of the electron beam apparatus of the present invention is that it has a plurality of optical systems, each of which comprises a primary electron optical system for scanning and irradiating a sample with a plurality of primary electron beams; a detector device for detecting a plurality of secondary beams emitted by irradiating the sample with the primary electron beams; and a secondary electron optical system for guiding the secondary electron beams from the sample to the detector device; all configured so that the plurality of optical systems scan different regions of the sample with their primary electron beams, and detect the respective secondary electron beams emitted from each of the respective regions. This is what makes higher throughput possible.

Abstract: A charged particle beam control method and apparatus emit a charged particle beam from a charged particle gun, and then accelerate and guide the charged particle beam toward a surface of a sample to be irradiated using a primary column. The primary column controls the charged particle beam using a charged particle beam controlling element that has a cylindrical insulating base and a plurality of electrodes formed on an internal surface of the cylindrical insulating base. In addition, a portion of the internal surface of the cylindrical insulating base separates the plurality of electrodes electrically, and the internal surface of the cylindrical insulating base is not exposed to the charged particle beam.

Abstract: A scanning device and method includes a movable stage on which a specimen is positioned, an irradiating device for electron beam irradiation of the specimen, a detection device for generating a picture of the irradiation region by detecting a secondary beam including secondary or reflected electrons from the irradiation region, and imaging electron optical system for imaging the secondary beam on a detection surface. A secondary beam detector including a fluorescent unit arranged on the detection surface to convert the secondary beam into light, one-dimensional line sensors for forming electric charge by photoelectric conversion, an array imaging element for accumulating the electric charge in a predetermined line of the line sensors, and a two-dimensional imaging element which emits electric charge by means of photoelectric conversion. A corresponding method is also disclosed.

Abstract: Reticle-holding devices (reticle “pods”) are disclosed for holding circular reticles as used microlithography systems that use circular reticles. An exemplary reticle pod includes a base and cover. Mounted to the base are multiple (desirably three) reticle-support blocks providing three respective, equally spaced, reticle-contact surfaces that support a reticle in the peripheral “handling zone” of the reticle. Mounted to the inside surface of the cover are corresponding compliant pressure-application members (desirably respective flat springs terminating with respective reticle-contact members) that apply a holding force to the reticle. A respective portion of the reticle is situated between each pressure-application member and a respective reticle-support surface. Thus, the reticle, configured as a SEMI standard wafer, is stably held at three points in the handling zone of the reticle without damaging the reticle.

Abstract: A charged particle beam control method and apparatus emit a charged particle beam from a charged particle gun, and then accelerate and guide the charged particle beam toward a surface of a sample to be irradiated using a primary column. The primary column controls the charged particle beam using a charged particle beam controlling element that has a cylindrical insulating base and a plurality of electrodes formed on an internal surface of the cylindrical insulating base. In addition, a portion of the internal surface of the cylindrical insulating base separates the plurality of electrodes electrically, and the internal surface of the cylindrical insulating base is not exposed to the charged particle beam.

Abstract: New and improved scanning device and corresponding method that include and involve a movable stage on which a specimen is positioned, irradiation means which irradiates an electron beam onto an irradiation region of the specimen, secondary beam detection means used in generating a picture of the irradiation region by detecting a secondary beam which consists of at least one of secondary electrons or reflected electrons from the irradiation region of the electron beam, an imaging electron optical system which causes imaging of the secondary beam on a detection surface of the secondary beam detection means, and which is arranged between the specimen and the secondary beam detection means.

Abstract: An inspection method using an electron beam. Emitted charged particles from an electron gun located inside a primary column are accelerated to form a primary beam. A cross section of the primary beam is shaped a desired shape by a primary optical system located inside the primary column. A trajectory of the primary beam is deflected using a primary deflector located inside the primary column. A sample is illuminated using the primary beam, the sample being on a stage to which a retarding voltage is applied. At least one of secondary electrons, reflected electrons or backwardly scattered electrons that are emerging from the sample on the stage are accelerated toward a second column to form a secondary beam. A trajectory of the secondary beam is deflected using a secondary deflector located inside the secondary column. The secondary beam is guided to a detector located inside the secondary column.

Abstract: In order to provide a static pressure air bearing having two axes usable in a vacuum environment in which the connection of the supporting air exhaust pipe does not adversely affect the motion of the bearing mechanism, air exhaust pipes are connected only with the fixed part(s) of the lower axis. Air exhaust from the upper axis is conducted through inner air exhaust piping (passages) formed within the fixed parts of the upper and lower axes, so that the exhaust pipes need not be connected with the movable parts.

Abstract: Reticle-holding devices (reticle “pods”) are disclosed for holding circular reticles as used microlithography systems that use circular reticles. An exemplary reticle pod includes a base and cover. Mounted to the base are multiple (desirably three) reticle-support blocks providing three respective, equally spaced, reticle-contact surfaces that support a reticle in the peripheral “handling zone” of the reticle. Mounted to the inside surface of the cover are corresponding compliant pressure-application members (desirably respective flat springs terminating with respective reticle-contact members) that apply a holding force to the reticle. A respective portion of the reticle is situated between each pressure-application member and a respective reticle-support surface. Thus, the reticle, configured as a SEMI standard wafer, is stably held at three points in the handling zone of the reticle without damaging the reticle.

Abstract: New and improved scanning device and corresponding method that include and involve a movable stage on which a specimen is positioned, irradiation means which irradiates an electron beam onto an irradiation region of the specimen, secondary beam detection means used in generating a picture of the irradiation region by detecting a secondary beam which consists of at least one of secondary electrons or reflected electrons from the irradiation region of the electron beam, an imaging electron optical system which causes imaging of the secondary beam on a detection surface of the secondary beam detection means, and which is arranged between the specimen and the secondary beam detection means.

Abstract: An inspection method using an electron beam. Emitted charged particles from an electron gun located inside a primary column are accelerated to form a primary beam. A cross section of the primary beam is shaped a desired shape by a primary optical system located inside the primary column. A trajectory of the primary beam is deflected using a primary deflector located inside the primary column. A sample is illuminated using the primary beam, the sample being on a stage to which a retarding voltage is applied. At least one of secondary electrons, reflected electrons or backwardly scattered electrons that are emerging from the sample on the stage are accelerated toward a second column to form a secondary beam. A trajectory of the secondary beam is deflected using a secondary deflector located inside the secondary column. The secondary beam is guided to a detector located inside the secondary column.