Abstract: A semiconductor device manufacturing method including a plasma etching process performed on a surface of the semiconductor device is provided. The semiconductor device has a specific metal therein that is unexposed at the surface at the beginning stage of the etching process, the specific metal gets exposed during the etching process, and the existence of the specific metal in an etching reactive chamber affects the rate of etching the semiconductor device. The method is characterized in that the specific metal is plasma etched as pretreatment before starting the plasma etching process of the semiconductor device to keep the etching rate stable.

Abstract: A semiconductor device producing method carries out an etching process during a time between a start and an end of a plasma etching, and carries out a plasma etching with respect to a specific metal as a pre-processing prior to the etching process. The etching process is selected from a group consisting of an etching process which includes no exposing of a specific metal which affects variation of an etching rate, an etching process which includes no positioning of the specific metal exposed from an etching mask, an etching process which includes exposing of the specific metal located at a surface other than an etching target surface of a semiconductor substrate, and an etching process which includes exposing the specific metal having a thickness smaller than a thickness of other etching targets regardless of an existence of the etching mask.

Abstract: A semiconductor device producing method carries out an etching process during a time between a start and an end of a plasma etching, and carries out a plasma etching with respect to a specific metal as a pre-processing prior to the etching process. The etching process is selected from a group consisting of an etching process which includes no exposing of a specific metal which affects variation of an etching rate, an etching process which includes no positioning of the specific metal exposed from an etching mask, an etching process which includes exposing of the specific metal located at a surface other than an etching target surface of a semiconductor substrate, and an etching process which includes exposing the specific metal having a thickness smaller than a thickness of other etching targets regardless of an existence of the etching mask.

Abstract: A semiconductor device manufacturing method including a plasma etching process performed on a surface of the semiconductor device is provided. The semiconductor device has a specific metal therein that is unexposed at the surface at the beginning stage of the etching process, the specific metal gets exposed during the etching process, and the existence of the specific metal in an etching reactive chamber affects the rate of etching the semiconductor device. The method is characterized in that the specific metal is plasma etched as pretreatment before starting the plasma etching process of the semiconductor device to keep the etching rate stable.