Abstract: A plasma treatment apparatus generates a plasma in a treatment vessel by an electromagnetic wave radiated from an electromagnetic wave radiation portion into the treatment vessel to perform plasma treatment by the plasma. At least a part of a wall constituting the treatment vessel includes at least a part of an electromagnetic wave transmission path which transmits the electromagnetic wave.

Abstract: An insulating film is formed with a plasma film forming apparatus which includes a vacuum vessel with an electromagnetic wave incident face F, first gas injection holes made in the vacuum vessel, and second gas injection holes made in the vacuum vessel farther away from the electromagnetic wave incident face F than the first gas injection holes. For example, a first gas is introduced from a position whose distance from the electromagnetic wave incident face F is less than 10 mm into the vacuum vessel. A second gas including an organic silicon compound is introduced from a position whose distance from the electromagnetic wave incident face is 10 mm or more into the vacuum vessel.

Abstract: In a plasma processing apparatus, electromagnetic waves are radiated from slots of waveguides into a processing chamber via dielectric windows that are supported on beams, thereby generating a plasma. A substrate, which is an object of processing, is processed by the generated plasma. Dielectric plates are attached to those surfaces of the beams, which are opposed to the processing chamber. The thickness of each dielectric plate is set at ½ or more of the intra-dielectric wavelength of the electromagnetic waves. Using the plasma processing apparatus, a large-area processing can uniformly be performed.

Abstract: A high-quality dielectric film is formed by generating plasma of a high electron density by a method such as diluting a rare gas or raising a frequency of a power supplier, and generating oxygen atoms or nitrogen atoms of a high density. The dielectric film contains silicon oxide in which the composition ratio of silicon and oxygen is between (1:1.94) and (1:2) both inclusive, silicon nitride in which the composition ratio of silicon and nitrogen is between (1:1.94) and (1:2) both inclusive, or silicon oxynitride in which the composition ratio of silicon and nitrogen is between (3:3.84) and (3:4) both inclusive.

Abstract: Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%?Pr<100%, and generating a plasma within the plasma processing chamber so as to form a film of silicon oxide on a substrate to be processed.

Abstract: A plurality of electromagnetic wave radiation waveguides are formed to branch from an electromagnetic wave distribution waveguide. A plurality of slots are provided to each electromagnetic wave radiation waveguide. A width of the electromagnetic wave radiation waveguide, a height of the electromagnetic wave radiation waveguide and an electromagnetic wave radiation waveguide cycle p are set to satisfy a relationship of ?0>p>a2>b2 and p=(?g1/2)+±? (where ? is 5% or below of ?g1), where ?0 is a free space wavelength of an electromagnetic wave, al is a width of the electromagnetic wave distribution waveguide, ?r1 is a specific inductive capacity of a dielectric material in the electromagnetic wave distribution waveguide, and ?g1 is a wavelength of the electromagnetic wave output from the electromagnetic wave source in the electromagnetic wave distribution waveguide.

Abstract: A plasma processing apparatus comprises: a chamber 12 having at least one opening and for generating plasma; a dielectric member 14 provided to cover the opening air-tightly; at least one wave guide 16 provided in the exterior of the chamber such that the one end side opposes the dielectric member; an electromagnetic wave source 20 provided on the other end side of the wave guide; a plurality of holes 38, 40, 42, 44, 46 provided on a surface opposing the dielectric member of the wave guide; and hole area adjusting means 18 provided in at least one of the above-mentioned holes so as to adjust the opening area of the hole.

Abstract: Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%?Pr<100%, and generating a plasma within the plasma processing chamber so as to form a film of silicon oxide on a substrate to be processed.

Abstract: Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%?Pr<100%, and generating a plasma within the plasma processing chamber so as to form a film of silicon oxide on a substrate to be processed.

Abstract: Disclosed is a plasma processing apparatus for performing a plasma processing, comprising an electromagnetic wave source for generating an electromagnetic wave, a rectangular waveguide, a plurality of slots formed in the rectangular waveguide and constituting a waveguide antenna, an electromagnetic wave radiation window consisting of a dielectric body, and a vacuum chamber, wherein a plasma is generated by an electromagnetic wave radiated from the slots into the vacuum chamber through the electromagnetic wave radiation window, the plasma processing apparatus being constructed to include an electromagnetic wave distributing waveguide portion for distributing the electromagnetic wave generated from the electromagnetic wave source into each of the waveguides, the plural waveguides being branched from the electric field plane or a plane perpendicular to the magnetic field plane of the electromagnetic wave distributing waveguide portion.

Abstract: In a plasma processing apparatus, electromagnetic waves are radiated from slots of waveguides into a processing chamber via dielectric windows that are supported on beams, thereby generating a plasma. A substrate, which is an object of processing, is processed by the generated plasma. Dielectric plates are attached to those surfaces of the beams, which are opposed to the processing chamber. The thickness of each dielectric plate is set at ½ or more of the intra-dielectric wavelength of the electromagnetic waves. Using the plasma processing apparatus, a large-area processing can uniformly be performed.

Abstract: There is provided a plasma treatment apparatus capable of treating a square shaped substrate having a large area even in the case of using reactive plasma, the plasma treatment apparatus including a waveguide 1, a waveguide antenna 2 made up of slots provided on the H-surface of the waveguide 1, an electromagnetic wave radiation window 4 made of a dielectric, a dielectric space 10 sandwiched between the waveguide 2 and the electromagnetic wave radiation window 4, and generating plasma by using the electromagnetic wave radiated from the waveguide antenna 2 through the electromagnetic wave radiation window 4, wherein an uneven portion 11 is provided on the surface of the waveguide 1 opposite to the electromagnetic wave radiation window 4.

Abstract: A plasma treatment apparatus generates a plasma in a treatment vessel by an electromagnetic wave radiated from an electromagnetic wave radiation portion into the treatment vessel to perform plasma treatment by the plasma. At least a part of a wall constituting the treatment vessel includes at least a part of an electromagnetic wave transmission path which transmits the electromagnetic wave.

Abstract: An insulating film is formed with a plasma film forming apparatus which includes a vacuum vessel with an electromagnetic wave incident face F, first gas injection holes made in the vacuum vessel, and second gas injection holes made in the vacuum vessel farther away from the electromagnetic wave incident face F than the first gas injection holes. For example, a first gas is introduced from a position whose distance from the electromagnetic wave incident face F is less than 10 mm into the vacuum vessel. A second gas including an organic silicon compound is introduced from a position whose distance from the electromagnetic wave incident face is 10 mm or more into the vacuum vessel.

Abstract: The present invention concerns a method of forming multi-layers such as base-coat and active layers for TFTs. In accordance with the preferred embodiment of the present invention, a first layer is formed on a transparent substrate using a physical vapor deposition. And a second layer is sequentially formed using a physical vapor deposition on the first layer without breaking vacuum. The present invention simplifies the TFT fabrication while decreasing the water or hydrogen content within multilayers including a base-coat (BC) layer.

Abstract: A plasma processing apparatus includes at least one electromagnetic wave source for generating an electromagnetic wave, an electromagnetic wave-distributing waveguide portion for distributing the electromagnetic wave generated from the electromagnetic wave source, a plurality of waveguides each coupled with the electromagnetic wave-distributing waveguide portion, the waveguides being provided on the same plane, a plurality of slots provided in each of the waveguides, at least one electromagnetic wave radiating window provided to face each slot, and a vacuum vessel in which a plasma is generated by the electromagnetic wave radiated from the electromagnetic wave radiating window. The electromagnetic wave-distributing waveguide portion is provided on the plural waveguides.

Abstract: A metal induced crystallization process is provided which employs an amorphous silicon film precursor deposited by physical vapor deposition, wherein the precursor film does not readily undergo crystallization by partial solid phase crystallization. Using this physical vapor deposition amorphous silicon precursor film, the amorphous silicon film is transformed to polysilicon by metal induced crystallization wherein the crystalline growth occurs fastest at regions that have been augmented with a metal catalyst and proceeds extremely slowly, practically zero, at regions which bear no metal catalyst. Accordingly, by use of the physical vapor deposition amorphous silicon precursor film in the process of the present invention, the metal induced crystallization process may take place at higher annealing temperatures and shorter annealing times without solid phase crystallization taking place.

Abstract: Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%≦Pr<100%, and generating a plasma within the plasma processing chamber so as to form a film of silicon oxide on a substrate to be processed.