Abstract: An apparatus for treating gas by using a filler is provided, for example, using an agent for detoxicating a waste gas which includes toxic substances such as silane, phosphine, hydrogen chloride, dichlorosilane, ammonia and/or various gases used in a semiconductor manufacturing process, a liquid crystal display element manufacturing process or the like. A detoxicating agent layer is provided in a flow path within a gas treating column, and ring-shaped baffle plates are provided so as to contact the upstream surface and the downstream surface of the detoxicating agent layer, with the outer edge of the baffle plate making contact with the wall of the flow path. A width of the baffle plate is set to not smaller than five times the outer diameter of the filler and not larger than 9% of the inner diameter of the gas treating column when the outer diameter di of the filler and inner diameter D of the gas treating column satisfy a relation of 5di?0.

Abstract: A thin film magnetic head whereby the inclined surface is formed with a prescribed angle relative to the upper surface of the substrate in the vicinity of a slide contact surface thereof with a magnetic recording medium, the magnetic gap is formed on the magnetic film on the inclined surface, and the azimuth of the magnetic gap is set by the inclined surface.By forming grooves or protrusions on the substrate, the inclined surface by which the azimuth of the magnetic gap is set is defined. A coil conductor is formed on the flat portion of the upper surface of the substrate.With the thin film magnetic head presented by this invention, a double azimuth thin film magnetic head of a multi-channel thin film magnetic head can be easily provided.