Abstract: A photoelectric conversion unit that outputs an image signal according to received light and a bonding pad section are disposed on one surface side of the substrate, and the bonding pad section has at least: a first opening provided to expose a pad electrode at a bottom; and a second opening that is arranged to surround the first opening and that is shallower than the first opening. The surface of a terrace in the bonding pad section is formed such that multiple types of materials are exposed.

Abstract: A solid-state imaging device capable of preventing variation in bonding strength in a bonding plane between a first semiconductor substrate and a second semiconductor substrate is provided. The solid-state imaging device includes a first semiconductor substrate having a plurality of first conductors, and a second semiconductor substrate bonded to the first semiconductor substrate and having a plurality of second conductors. In a bonding plane between the first and second semiconductor substrates, the device includes regions where the conductors overlap, regions where insulating films and the conductors overlap, and regions where the insulating films overlap. The proportion of areas where the first insulating films and the second insulating films are bonded together to the bonding area between the first semiconductor substrate and the second semiconductor substrate is constant before and after the first semiconductor substrate and the second semiconductor substrate are bonded together.

Abstract: A photoelectric conversion unit that outputs an image signal according to received light and a bonding pad section are disposed on one surface side of the substrate, and the bonding pad section has at least: a first opening provided to expose a pad electrode at a bottom; and a second opening that is arranged to surround the first opening and that is shallower than the first opening. The surface of a terrace in the bonding pad section is formed such that multiple types of materials are exposed.

Abstract: The present disclosure relates to a semiconductor device and an electronic apparatus which is capable of reducing variations and deterioration of transistor characteristics. A first connection pad connected with a first wiring and a first floating metal greater than the first connection pad are formed at a bonding surface of a first substrate, whereas a second connection pad connected with a second wiring and a second floating metal greater than the second connection pad are formed at a bonding surface of a second substrate. The first floating metal and the second floating metal formed at the first substrate and the second substrate are bonded to each other. The present disclosure is applicable to a CMOS solid-state imaging device used for an imaging apparatus such as a camera, for example.

Abstract: The present disclosure relates to a semiconductor device and an electronic apparatus which is capable of reducing variations and deterioration of transistor characteristics. A first connection pad connected with a first wiring and a first floating metal greater than the first connection pad are formed at a bonding surface of a first substrate, whereas a second connection pad connected with a second wiring and a second floating metal greater than the second connection pad are formed at a bonding surface of a second substrate. The first floating metal and the second floating metal formed at the first substrate and the second substrate are bonded to each other. The present disclosure is applicable to a CMOS solid-state imaging device used for an imaging apparatus such as a camera, for example.

Abstract: The present disclosure relates to a semiconductor device and an electronic apparatus which is capable of reducing variations and deterioration of transistor characteristics. A first connection pad connected with a first wiring and a first floating metal greater than the first connection pad are formed at a bonding surface of a first substrate, whereas a second connection pad connected with a second wiring and a second floating metal greater than the second connection pad are formed at a bonding surface of a second substrate. The first floating metal and the second floating metal formed at the first substrate and the second substrate are bonded to each other. The present disclosure is applicable to a CMOS solid-state imaging device used for an imaging apparatus such as a camera, for example.

Abstract: The present disclosure relates to a solid-state imaging element capable of suppressing stray light with respect to a charge storage unit such as an FD, and an electronic device. According to an aspect of the present disclosure, a solid-state imaging element constituted by many pixels includes a photoelectric conversion unit formed for each of the pixels and that converts incident light into a charge; a charge storage unit that temporarily holds the converted charge; and a first light shielding unit formed between the pixels and having a predetermined length in a thickness direction of a substrate. The charge storage unit is formed below a cross portion where the first light shielding unit formed between pixels adjacent to each other in a longitudinal direction crosses the first light shielding unit formed between pixels adjacent to each other in a lateral direction. The present disclosure can be applied to, for example, a backside irradiation type CMOS image sensor.

Abstract: The present disclosure relates to a semiconductor device and an electronic apparatus which is capable of reducing variations and deterioration of transistor characteristics. A first connection pad connected with a first wiring and a first floating metal greater than the first connection pad are formed at a bonding surface of a first substrate, whereas a second connection pad connected with a second wiring and a second floating metal greater than the second connection pad are formed at a bonding surface of a second substrate. The first floating metal and the second floating metal formed at the first substrate and the second substrate are bonded to each other. The present disclosure is applicable to a CMOS solid-state imaging device used for an imaging apparatus such as a camera, for example.

Abstract: The present disclosure relates to a semiconductor device and an electronic apparatus which is capable of reducing variations and deterioration of transistor characteristics. A first connection pad connected with a first wiring and a first floating metal greater than the first connection pad are formed at a bonding surface of a first substrate, whereas a second connection pad connected with a second wiring and a second floating metal greater than the second connection pad are formed at a bonding surface of a second substrate. The first joint pad and the second floating metal are connected to each other, the second floating metal and the first floating metal are connected to each other, and the first floating metal and the second joint pad are connected to each other, whereby the first floating metal and the second floating metal formed at the first substrate and the second substrate are bonded to each other.

Abstract: The present disclosure relates to a solid-state imaging element capable of suppressing stray light with respect to a charge storage unit such as an FD, and an electronic device. According to an aspect of the present disclosure, a solid-state imaging element constituted by many pixels includes: a photoelectric conversion unit formed for each of the pixels and configured to convert incident light into a charge; a charge storage unit configured to temporarily hold the converted charge; and a first light shielding unit formed between the pixels and having a predetermined length in a thickness direction of a substrate. The charge storage unit is formed below a cross portion where the first light shielding unit formed between pixels adjacent to each other in a longitudinal direction crosses the first light shielding unit formed between pixels adjacent to each other in a lateral direction. The present disclosure can be applied to, for example, a backside irradiation type CMOS image sensor.

Abstract: The present disclosure relates to a semiconductor device and an electronic apparatus which is capable of reducing variations and deterioration of transistor characteristics. A first connection pad connected with a first wiring and a first floating metal greater than the first connection pad are formed at a bonding surface of a first substrate, whereas a second connection pad connected with a second wiring and a second floating metal greater than the second connection pad are formed at a bonding surface of a second substrate. The, and the first floating metal and the second floating metal formed at the first substrate and the second substrate are bonded to each other. The present disclosure is applicable to a CMOS solid-state imaging device used for an imaging apparatus such as a camera, for example.

Abstract: An electroacoustic transducer comprises an electric sound conversion section that vibrates a mechanical device based on an electric signal so as to emit a sound wave; and an electromagnetic wave radiation section that generates and emits an electromagnetic wave from the electrical signal.

Abstract: A speaker includes a sound source, a rod-like member whose base end is in contact with the sound source, and a pair of flexible wing members whose ends are attached to the tip of the rod shape member, and whose other ends are free.

Abstract: A method for producing a solid-state imaging device includes steps of: forming transfer electrodes on a substrate having a plurality of light-sensing portions through a gate insulating layer so that the light-sensing portions are exposed; forming a planarized insulating layer on the substrate to cover the transfer electrodes formed on the substrate; forming openings in the planarized insulating layer so that each of the transfer electrodes is partly exposed out of the planarized insulating layer at a predetermined position; forming a wiring material layer so that the openings are filled with the wiring material layer; forming a resist layer on the wiring material layer; exposing and developing the resist layer so that only the resist layer in a predetermined area covering the openings is left; and patterning the wiring material layer using the exposed and developed resist layer to form connection wirings connected to the transfer electrodes by the openings.

Abstract: A syringe barrel for pre-filled syringe formulation capable of suppressing the adhesion of air bubbles, and a pre-filled syringe formulation having the adhesion of air bubbles suppressed, are provided, and a process allowing efficient production of the syringe barrel is provided. A syringe barrel for pre-filled syringe formulation having the interior surface treated by corona discharge; a pre-filled syringe formulation having a drug solution filled and sealed in the syringe barrel; and a process for producing a syringe barrel for pre-filled syringe formulation, including subjecting the interior surface of a syringe barrel to a corona discharge treatment.

Abstract: A method for producing a solid-state imaging device includes steps of: forming transfer electrodes on a substrate having a plurality of light-sensing portions through a gate insulating layer so that the light-sensing portions are exposed; forming a planarized insulating layer on the substrate to cover the transfer electrodes formed on the substrate; forming openings in the planarized insulating layer so that each of the transfer electrodes is partly exposed out of the planarized insulating layer at a predetermined position; forming a wiring material layer so that the openings are filled with the wiring material layer; forming a resist layer on the wiring material layer; exposing and developing the resist layer so that only the resist layer in a predetermined area covering the openings is left; and patterning the wiring material layer using the exposed and developed resist layer to form connection wirings connected to the transfer electrodes by the openings.

Abstract: A speaker includes a sound source, a rod-like member whose base end is in contact with the sound source, and a pair of flexible wing members whose ends are attached to the tip of the rod shape member, and whose other ends are free.

Abstract: An electroacoustic transducer comprises an electric sound conversion section that vibrates a mechanical device based on an electric signal so as to emit a sound wave; and an electromagnetic wave radiation section that generates and emits an electromagnetic wave from the electrical signal.

Abstract: There is provided an acoustic effecter capable of compensating deterioration of an audio source signal in a transmission path and obtaining an audio having an emphasized transient response. The acoustic effecter superimposes reflection energy generated by impedance mismatch of the transmission path on the acoustic signal to be transmitted or emits the reflection energy into the air and superimposes it on the audio output. A terminating element (12) generating signal reflection via a terminating transmission path (13) is connected in parallel to the output terminal or the input terminal (112) of the transmission path (30).

Abstract: The period of a sound-existence/sound-silence of a speech signal is detected. Packet data is inserted in a speech time slot during the period of non-existence of sound in the speech signal. A time slot is also given to the non-speech data requiring a quick response in transmission so that the non-speech data is multiplexed with the speech signal for transmission. Data-non-existence of non-speech data is detected when the non-speech data does not exist and then the packet data is inserted into a time slot of the non-speech data for transmission.