Abstract: A cross-linked composition, obtained by cross-linking polyolefin composition comprising, all percentages being by weight: A) from 5 to 38% of a polypropylene component; B) from 35 to 85% of a copolymer of ethylene with propylene, containing from 42 to 70% of ethylene and having solubility in xylene at room temperature greater than 50%; C) from 5 to 45% of a polymer composition comprising a blend of: i) from 20 to 80% of an ethylene copolymer having a Shore A hardness value equal to or lower than 90 points and containing up to 45% of at least one ?-olefin comonomer, provided that, when propylene is present as comonomer, such copolymer i) has a composition which is different from B); ii) from 20 to 80% of a propylene copolymer having a Shore A hardness value equal to or lower than 90 points and containing up to 40% of at least one ?-olefin comonomer; wherein the amounts of A), B) and C) are referred to the total weight of A)+B)+C) and the amounts of i) and ii) are referred to the weight of C).

Abstract: A cross-linked composition obtained by cross-linking a polyolefin composition (I) comprising, all percentages being by weight: A) from 5 to 38% of a polypropylene; B) from 35 to 85% of a copolymer of ethylene with propylene, containing from 42 to 70% of ethylene and having solubility in xylene at room temperature greater than 50%; C) from 5 to 40% of a butene-1 homopolymer or copolymer having: a content of butene-1 derived units of 75% or more; a flexural modulus of 100 MPa or less; and optionally, D) from 5 to 35% of one or more polymers different from B) in composition, having a Shore A hardness value equal to or lower than 90 points, wherein the content of butene-1, if present, is of less than 50%; in which composition (I) the amounts of A), B), C) and D) are referred to the total weight of A)+B)+C) and optionally D), and when D) is present, the total weight of C)+D) is of 50% or less, referred to the total weight of A)+B)+C)+D).

Abstract: A cross-linked composition obtained by cross-linking a polyolefin composition (I) comprising, all percentages being by weight: A) from 5 to 38% of a polypropylene; B) from 35 to 85% of a copolymer of ethylene with propylene, containing from 42 to 70% of ethylene and having solubility in xylene at room temperature greater than 50%; C) from 5 to 40% of a butene-1 homopolymer or copolymer having: a content of butene-1 derived units of 75% or more; a flexural modulus of 100 MPa or less; and optionally, D) from 5 to 35% of one or more polymers different from B) in composition, having a Shore A hardness value equal to or lower than 90 points, wherein the content of butene-1, if present, is of less than 50%; in which composition (I) the amounts of A), B), C) and D) are referred to the total weight of A)+B)+C) and optionally D), and when D) is present, the total weight of C)+D) is of 50% or less, referred to the total weight of A)+B)+C)+D).

Abstract: A cross-linked composition, obtained by cross-linking polyolefin composition comprising, all percentages being by weight: A) from 5 to 38% of a polypropylene component; B) from 35 to 85% of a copolymer of ethylene with propylene, containing from 42 to 70% of ethylene and having solubility in xylene at room temperature greater than 50%; C) from 5 to 45% of a polymer composition comprising a blend of: i) from 20 to 80% of an ethylene copolymer having a Shore A hardness value equal to or lower than 90 points and containing up to 45% of at least one ?-olefin comonomer, provided that, when propylene is present as comonomer, such copolymer i) has a composition which is different from B); ii) from 20 to 80% of a propylene copolymer having a Shore A hardness value equal to or lower than 90 points and containing up to 40% of at least one ?-olefin comonomer; wherein the amounts of A), B) and C) are referred to the total weight of A)+B)+C) and the amounts of i) and ii) are referred to the weight of C).

Abstract: Polyolefin composition comprising, in percent by weight: A) 50-75% of a blend of polymers (PP) and (ECI), wherein (PP) is selected from the group consisting of: (i) propylene homopolymers; (ii) copolymers of propylene; (iii) combinations of said homopolymers (i) and copolymers (ii); (EC1) is a copolymer of ethylene and propylene or CH2?CHR alpha-olefin(s), where R is a 2-8 carbon alkyl radical, or a copolymer of ethylene, propylene and the said CH2?CHR alpha-olefin(s), containing from 20 to 35%, of ethylene; and B) 25-50% of a copolymer (ECII) of ethylene and propylene or CH2?CHR alpha-olefin(s), where R is a 2-8 carbon alkyl radical, or a copolymer of ethylene, propylene and the said CH2?CHR alpha-olefin(s), containing from 40 to 60% of ethylene; in which composition the copolymer component (ECI) is present in amounts from 23 to 45% with respect to the total weight of (A), and the intrinsic viscosity [?tot] of the fraction XS soluble in xylene at room temperature, referred to the total weight of (A)+(B), is

Abstract: This invention has a purpose to provide an insulated gate-type semiconductor device and its manufacturing method in which a decrease in gate insulation dielectric strength voltage and a reduction in manufacturing costs are both achieved. First, (a) a CZ bulk substrate is prepared. Next, (b) P? diffused layer and N+ diffused layer 31 are formed by executing processes such as ion implantation and thermal diffusion treatment. Further (c) a gate trench is formed by reactive ion etching. Next, (d) a gate insulation film containing carbon of 1.0×1018 atoms/cm3 is formed on the wall face of a gate trench according to a CVD method and, annealing is subsequently performed. As a consequence, a low defect area is formed in the vicinity of an interface between the CZ bulk substrate and the gate insulation film.

Abstract: A semiconductor device in which both an IGBT element region and a diode element region exist in the same semiconductor substrate includes a low lifetime region, which is formed in at least a part of a drift layer within the diode element region and shortens the lifetime of holes. A mean value of the lifetime of holes in the drift layer that includes the low lifetime region is shorter within the IGBT element region than within the diode element region.

Abstract: Polyolefin composition comprising, in percent by weight: A) 50-75% of a blend of polymers (PP) and (ECI), wherein (PP) is selected from the group consisting of: (i) propylene homopolymers; (ii) copolymers of propylene; (iii) combinations of said homopolymers (i) and copolymers (ii); (EC1) is a copolymer of ethylene and propylene or CH2?CHR alpha-olefin(s), where R is a 2-8 carbon alkyl radical, or a copolymer of ethylene, propylene and the said CH2?CHR alpha-olefin(s), containing from 20 to 35%, of ethylene; and B) 25-50% of a copolymer (ECII) of ethylene and propylene or CH2?CHR alpha-olefin(s), where R is a 2-8 carbon alkyl radical, or a copolymer of ethylene, propylene and the said CH2?CHR alpha-olefin(s), containing from 40 to 60% of ethylene; in which composition the copolymer component (ECI) is present in amounts from 23 to 45% with respect to the total weight of (A), and the intrinsic viscosity [?tot] of the fraction XS soluble in xylene at room temperature, referred to the total weight of (A)+(B), is

Abstract: A semiconductor device in which both an IGBT element region and a diode element region exist in the same semiconductor substrate includes a low lifetime region, which is formed in at least a part of a drift layer within the diode element region and shortens the lifetime of holes. A mean value of the lifetime of holes in the drift layer that includes the low lifetime region is shorter within the IGBT element region than within the diode element region.

Abstract: A semiconductor device having a substrate; an emitter electrode or source electrode formed on the top surface side of the substrate; a gate electrode formed on the top surface side of the substrate; and a collector electrode or drain electrode formed on the bottom surface side of the substrate. The device includes an insulating region formed so as to surround a device-forming region provided on the top surface side of the substrate; and a drift region of the device-forming region, the drift region being in contact with the insulating region, is formed of a semiconductor layer having the same conduction type as that of a channel formed through application of an electric potential to the gate electrode. The gate electrode is a trench gate. An outer peripheral portion of the emitter electrode or source electrode extends in a width of 20 ?m or more over the top surface of the insulating region.

Abstract: In a conventional semiconductor device, an insulator film is formed between a p-type semiconductor region and an n-type semiconductor region of a super junction structure, thereby preventing the mutual diffusion of impurities between the two regions. The manufacturing processes used to produce semiconductor devices with this configuration were complex. A semiconductor device of the present invention comprises a super junction structure in which a pair semiconductor regions, comprising of a p-type semiconductor region and an n-type semiconductor region, is disposed repeatedly along at least one direction, wherein a Si1-x-yGexCy (0?x<1, 0<y<1, 0<-x-y<1) crystal region is disposed repeatedly along, at least, the aforementioned direction, and a Si crystal region forming either one of the p-type semiconductor region and the n-type semiconductor region is disposed between a pair of the Si1-x-yGexCy crystal regions.

Abstract: A semiconductor device having a substrate; an emitter electrode or source electrode formed on the top surface side of the substrate; a gate electrode formed on the top surface side of the substrate; and a collector electrode or drain electrode formed on the bottom surface side of the substrate. The device includes an insulating region formed so as to surround a device-forming region provided on the top surface side of the substrate; and a drift region of the device-forming region, the drift region being in contact with the insulating region, is formed of a semiconductor layer having the same conduction type as that of a channel formed through application of an electric potential to the gate electrode. The gate electrode is a trench gate. An outer peripheral portion of the emitter electrode or source electrode extends in a width of 20 ?m or more over the top surface of the insulating region.

Abstract: This invention has a purpose to provide an insulated gate-type semiconductor device and its manufacturing method in which a decrease in gate insulation dielectric strength voltage and a reduction in manufacturing costs are both achieved. First, (a) a CZ bulk substrate is prepared. Next, (b) P? diffused layer and N+ diffused layer 31 are formed by executing processes such as ion implantation and thermal diffusion treatment. Further (c) a gate trench is formed by reactive ion etching. Next, (d) a gate insulation film containing carbon of 1.0×1018 atoms/cm3 is formed on the wall face of a gate trench according to a CVD method and, annealing is subsequently performed. As a consequence, a low defect area is formed in the vicinity of an interface between the CZ bulk substrate and the gate insulation film.

Abstract: For forming a contact electrode to an n-type contact layer of a gallium nitride-based compound semiconductor, the n-type contact layer of the gallium nitride-based compound semiconductor is exposed to an oxygen plasma to form an oxygen-doped surface layer in a surface of the n-type contact layer, and then, an electrode metal is formed on the oxygen-doped surface layer. With this arrangement, an n-type contact electrode having a low specific contact resistance is obtained with good reproducibility, with performing no annealing after formation of the electrode metal.

Abstract: For forming a contact electrode to an n-type contact layer of a gallium nitride-based compound semiconductor, the n-type contact layer of the gallium nitride-based compound semiconductor is exposed to an oxygen plasma to form an oxygen-doped surface layer in a surface of the n-type contact layer, and then, an electrode metal is formed on the oxygen-doped surface layer. With this arrangement, an n-type contact electrode having a low specific contact resistance is obtained with good reproducibility, with performing no annealing after formation of the electrode metal.

Abstract: For forming a contact electrode to an n-type layer of a gallium nitride-based compound semiconductor, the n-type contact layer of the gallium nitride-based compound semiconductor is exposed to an oxygen plasma to form an oxygen-doped surface layer in a surface of the n-type contact layer, and then, an electrode metal is formed on the oxygen-doped surface layer. With this arrangement, an n-type contact electrode having a low specific contact resistance is obtained with good reproducibility, with performing no annealing after formation of the electrode metal.

Abstract: For forming a contact electrode to an n-type contact layer of a gallium nitride-based compound semiconductor, the n-type contact layer of the gallium nitride-based compound semiconductor is exposed to an oxygen plasma to form an oxygen-doped surface layer in a surface of the n-type contact layer, and then, an electrode metal is formed on the oxygen-doped surface layer. With this arrangement, an n-type contact electrode having a low specific contact resistance is obtained with good reproducibility, with performing no annealing after formation of the electrode metal.

Abstract: The present invention provides a method of controlling a wavelength-selective light emitting device comprising an array of plural semiconductor laser diodes differing in diffraction grating pitch; at least a multiplexer; and at least a modulator, wherein an absorption edge wavelength of the modulator is controlled following to an oscillation wavelength of selected one of the plural laser diodes.

Abstract: A thermoplastic resin composition having good coating affinity is disclosed, which comprises (a) from 20 to 80 parts by weight of a resin component containing a modified polyolefin resin which has been graft-modified with an unsaturated hydroxy group-containing compound or an unsaturated carboxylic acid, (b) from 80 to 20 pats by weight of a rubber component containing a copolymer rubber, and (c) a functional group-terminated oligomer in an amount of from 0.1 to 20 parts by weight per 100 parts by weight of the sum of components (a) and (b).