Abstract: A cathode panel for a cold cathode field emission display, comprising; (a) a plurality of main wirings, (b) a plurality of branch wirings extending from each main wiring, and (c) cold cathode electron emitting portions connected to the branch wirings, wherein a branch wiring connecting a cold cathode electron emitting portion defective in operation and a main wiring is cut off.

Abstract: A semiconductor device of MCM type allowing high-density assembly and a process of fabricating the same is provided. There are provided semiconductor chips mounted on a supporting substrate and incrusted in an insulation film on the supporting substrate and wiring formed in the insulation film so as to connect to each semiconductor chip through connection holes provided in the insulation film. Then, an interlayer dielectric covers such wiring that is connected to an upper layer wiring, through connection holes provided in such interlayer dielectric. In addition, an upper layer insulation film covers the upper layer wiring, and an electrode, connected to such upper layer wiring through another connection hole, is provided on such upper layer insulation film.

Abstract: A cathode panel for a cold cathode field emission display, comprising; (a) a plurality of main wirings, (b) a plurality of branch wirings extending from each main wiring, and (c) cold cathode electron emitting portions connected to the branch wirings, wherein a branch wiring connecting a cold cathode electron emitting portion defective in operation and a main wiring is cut off.

Abstract: A semiconductor device of MCM type allowing high-density assembly and a process of fabricating the same is provided.

Abstract: In a dry etching apparatus, a susceptor cover is attached to a substrate susceptor to shape it into a tapered contour, and no other element is positioned around a wafer support plane to ensure a flatness. A wafer positioning mechanism is provided near the perimeter of the wafer support plane, and it is raised to extend to a level higher than the wafer support plane and used in this status only upon setting or removing the wafer.

Abstract: A semiconductor device of MCM type allowing high-density assembly and a process of fabricating the same is provided.

Abstract: A mixed etching gas consisting of boron trichloride, a rare gas, and chlorine is used for etching of an aluminum metal film by dry-etching. In the first step, high frequency power is used to etch and remove alloy grains which tend to form residues and to etch an aluminum metal film in an anisotropic mode. Just before the under-layered silicon film is exposed, the frequency power is lowered but is kept higher than the minimum power required for anisotropic etching to enable etching selectivity with respect to the silicon dioxide film to be achieved.

Abstract: A method of forming an aluminum-alloy pattern at room temperature, which is capable of eliminating the generation of after-corrosion and enhancing the anisotropic processing. In a first step, an etching mask made of a silicon nitride based film is formed on an aluminum-alloy film formed on a barrier metal layer which is formed on a substrate. In a second step, the aluminum-alloy film is dry-etched at room temperature, to form a pattern of the aluminum-alloy film. The etching selection ratio of the aluminum-alloy film to the etching mask is thus improved, and further a sidewall protective film made of aluminum nitride is formed on the etching sidewall, thereby sufficiently performing the anisotropic processing for the aluminum-alloy pattern. In subsequent steps, the barrier metal layer may also be etched and removed at room temperature, and a further sidewall protective film made of aluminum oxide is formed on the etching sidewall as a result of oxygen plasma processing.

Abstract: A process for dry etching a copper containing film formed on a substrate is performed by using an etching gas while heating at a temperature below 200.degree. C. The etching gas is selectable from the group consisting of a mixed gas of a N containing gas, an O containing gas, a N and O containing gas, or a mixed gas of a N containing gas, an O containing gas and a F containing gas, or a mixed gas of a N and O containing gas and a F containing gas. By this etching gas, Cu(NO.sub.3).sub.2 is formed to be sublimed.

Abstract: A method for forming a copper wiring in a semiconductor device utilizes a copper film with a pattern mask thereon. Exposed portions of the copper film are etched to form a copper wiring. An insulation film is deposited over the copper wiring, including on side walls thereof. A portion of the insulation film is removed to leave an insulation film substantially only on side walls of the copper which is thinner than before the removing. A first dielectric film is formed between the copper wiring up to a top of the pattern mask but not on top of the pattern mask in order to embed and flatten regions between the copper wiring and pattern mask so that the regions are substantially level with the top of the pattern mask. A second dielectric layer is formed on the first dielectric layer to provide a flat surface over the copper wiring and pattern mask.

Abstract: A process for dry etching a copper containing film formed on a substrate is performed by using an etching gas while heating at a temperature below 200.degree. C. The etching gas is selectable from the group consisting of a mixed gas of a N containing gas, an O containing gas, a N and O containing gas, or a mixed gas of a N containing gas, an O containing gas and a F containing gas, or a mixed gas of a N and O containing gas and a F containing gas. By this etching gas, Cu(NO.sub.3).sub.2 is formed to be sublimed.

Abstract: A rectangular substrate dry etching apparatus which etches a rectangular substrate of a large size with a high degree of accuracy. The dry etching apparatus comprises an etching chamber in which a rectangular substrate to be etched is held in position in the etching chamber, and a plasma generator disposed in the etching chamber for generating a pair of high density plasma bars on the outer sides of and substantially in parallel to a pair of opposing sides of the rectangular substrate in the etching chamber so as to etch the rectangular substrate with diffusion components of the high density plasma bars.

Abstract: An improved method of manufacturing a semiconductor device includes forming an insulating layer on a substrate, depositing a metal film layer on the insulating layer and depositing a photoresist layer on the metal film layer. The photoresist layer is formed with openings through which a predetermined surface of the metal film layer is exposed. The predetermined surface of the metal film layer is subjected to dry etching so that an underlying portion of the insulating layer is exposed. The remaining portion of the photoresist layer is then subjected to ashing by using an isopropyl alcohol-containing gas to expose the surface of said metal film layer.

Abstract: Proposed is a method for improving resist selectivity in dry etching of an aluminum-based material layer. A mixed gas containing a chlorine-based gas and hydrogen iodide (HI) is used as an etching gas. The chlorine-based gas furnishes Cl* as a main etchant for the Al-based material layer, while HI furnishes H*. For anisotropic etching of the Al-based material layer, decomposition products of a resist mask are used as a sidewall protection film. It has been known that deposition of the sidewall protection film is promoted when hydrogen atoms are contained in the sidewall protection film. HI is used in the present invention as a supply source for H* because the interatomic bond energy of its H--I bond is low as compared to that of H.sub.2, HCl or HBr so that HI is superior to the H* yielding efficiency under discharge dissociation conditions. In this manner, the bias power necessary for anisotropic etching may be reduced to inhibit sputtering out of the resist mask.