Abstract: A temperature detecting device includes a heat receiving plate, a displacement transmitting part, a deforming part, a deformation generating part and a displacement detecting part. The heat receiving plate is restrained at its rim portion to generate a displacement of a central portion in its thickness direction with respect to the rim portion in accordance with the temperature of an atmospheric gas. The displacement transmitting part is displaced in accordance with the displacement of the central portion of the heat receiving plate. The deforming part is deformed by the displacement transmitting part. The deformation generating part maintains a distance between the rim portion of the heat receiving plate and the deforming part. The displacement detecting part detects a deformation of the deforming part and outputs an electric signal.

Abstract: A temperature detecting device includes a heat receiving plate, a displacement transmitting part, a deforming part, a deformation generating part and a displacement detecting part. The heat receiving plate is restrained at its rim portion to generate a displacement of a central portion in its thickness direction with respect to the rim portion in accordance with the temperature of an atmospheric gas. The displacement transmitting part is displaced in accordance with the displacement of the central portion of the heat receiving plate. The deforming part is deformed by the displacement transmitting part. The deformation generating part maintains a distance between the rim portion of the heat receiving plate and the deforming part. The displacement detecting part detects a deformation of the deforming part and outputs an electric signal.

Abstract: An ITO film-formed substrate having excellent alkali resistance and adhesion is provided. For the ITO film-formed substrate, a structure is adopted in which a color filter 102, an organic protective film 103, intermediate layers 104a and 104b, and an ITO film 105 having an electrode pattern patterned therein are formed in this order from the bottom upwards on a surface of a glass substrate 101. The intermediate layer 104a is deposited on a surface of the organic protective film 103 through a high-frequency sputtering method using Ar as an introduced gas, and is made of a metal oxide that is not prone to dissolving in alkalis; the intermediate layer 104b is deposited through a reactive sputtering method or a high-frequency sputtering method, and is made of a metal oxide or metal nitride that is not prone to dissolving in alkalis.

Abstract: An organic EL device 10 is comprised of an ITO film-formed substrate 4 that is comprised of a glass substrate 1, an SiO2 film 2 that is formed on a surface of the glass substrate 1 and is for alkaline passivation, and an ITO film 3 that is formed on the surface of the SiO2 film 2, a hole transport layer 5 that is formed on the surface of the ITO film 3 and is for efficiently injecting holes into a light-emitting layer 6, a thin metallic film layer 7 that is formed on the light-emitting layer 6 and is for injecting electrons into the light-emitting layer 6, and the light-emitting layer 6 which emits light upon recombination of the injected holes and electrons. The surface smoothness of the glass substrate 1 is controlled to satisfy 0 nm≦Rz≦4 nm. As a result, non-luminescent spots do not occur and hence durability can be improved.

Abstract: An ITO film-formed substrate having excellent alkali resistance and adhesion is provided. For the ITO film-formed substrate, a structure is adopted in which a color filter 102, an organic protective film 103, intermediate layers 104a and 104b, and an ITO film 105 having an electrode pattern patterned therein are formed in this order from the bottom upwards on a surface of a glass substrate 101. The intermediate layer 104a is deposited on a surface of the organic protective film 103 through a high-frequency sputtering method using Ar as an introduced gas, and is made of a metal oxide that is not prone to dissolving in alkalis; the intermediate layer 104b is deposited through a reactive sputtering method or a high-frequency sputtering method, and is made of a metal oxide or metal nitride that is not prone to dissolving in alkalis.

Abstract: In a method of manufacturing a substrate having a transparent conductive film in which sputtering is carried out on a transparent insulating substrate using an indium oxide/tin oxide target under an atmosphere of a mixed gas containing argon and oxygen, when the ratio of oxygen to argon in the mixed gas is in a suitable range of 0.016 to 0.018, the carrier density of the transparent conductive film becomes a maximum, while the mobility rises progressively as the ratio of oxygen to argon increases. The surface resistance of the transparent conductive film, that is the reciprocal of the product of the carrier density and the mobility, 1/(carrier density×mobility), takes a minimum value when the ratio of oxygen to argon is in the above suitable range. In this case, crystallization of the film is promoted and the percentage change between the surface resistance of the film before heat treatment and the surface resistance of the film after heat treatment can be kept down to within ±10%.

Abstract: In a method of manufacturing a substrate having a transparent conductive film in which sputtering is carried out on a transparent insulating substrate using an indium oxide/tin oxide target under an atmosphere of a mixed gas containing argon and oxygen, when the ratio of oxygen to argon in the mixed gas is in a suitable range of 0.016 to 0.018, the carrier density of the transparent conductive film becomes a maximum, while the mobility rises progressively as the ratio of oxygen to argon increases. The surface resistance of the transparent conductive film, that is the reciprocal of the product of the carrier density and the mobility, 1/(carrier density×mobility), takes a minimum value when the ratio of oxygen to argon is in the above suitable range. In this case, crystallization of the film is promoted and the percentage change between the surface resistance of the film before heat treatment and the surface resistance of the film after heat treatment can be kept down to within ±10%.

Abstract: This invention provides holding and supporting appliances used in the fields of orthopedics, rehabilitation and sports and support members thereof that are light in weight, thin, rigid and durable and breathe well, and, furthermore, support members made of reinforced plastic triaxial woven fabrics impregnated with resin. The support members according to this invention include a piece formed of reinforced plastic triaxial woven fabrics. Preferably, the formed piece should have openings representing 5 to 33 percent of the overall area thereof, and a flexural rigidity of 10 to 1×104 kg·mm2 per unit width and a basis weight (weight per unit area) of 50 to 1000 g/m2. Holding and supporting appliances are formed by using the support members described above.

Abstract: A DC amplifier includes first and second transistors, an emitter resistor, and a load resistor. The first and second transistors constitute a differential amplification transistor pair. The emitter resistor is connected between the emitters of the first and second transistors. The load resistor is connected between the collectors of the transistors. The resistance of the load resistor is set to be 1/2 that of the emitter resistor. The emitters of third and fourth transistors equivalent to the first and second transistors are series-connected to the collectors of the first and second transistors through the load resistor. The biases of the third and fourth transistors are set to be close to those of the first and second transistors.

Abstract: A process for formation of tin oxide film is described, wherein a glass substrate is heated to a high temperature and then tin oxide film is formed on the surface of said substrate by a thermal decomposition oxidation reaction caused by bringing a tin compound or a mixture of a tin compound and a fluorine-containing compound into contact with the surface of said glass substrate, and wherein prior to the formation of tin oxide film, said glass substrate is preliminarily brought into contact with a solution of chloride of a metal belonging to Group IVB of the Periodic Table so that a layer of a composition containing the chloride of the Group IVB metal as the primary component is formed on the surface of said substrate.