Patents by Inventor Yukihiro Mikogami

Yukihiro Mikogami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6096836
    Abstract: Disclosed herein is a curing catalyst comprising at least one compound which is a substituted or unsubstituted aromatic or heteroaromatic compound and having any one of groups (I) --O--R.sub.1, (II) --O--CY--R.sub.1, or (III) --O--CY--X--R.sub.1, the groups being directly bonded to the armoatic or heteroaromatic ring, in a number of 1 to 10 wherein R.sub.1 may be the same or different and is a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, X is O or NH and Y is O or S. Furthermore, an epoxy resin composition comprising the curing catalyst is disclosed.
    Type: Grant
    Filed: March 2, 1998
    Date of Patent: August 1, 2000
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shuzi Hayase, Yoshihiko Nakano, Shinji Murai, Yukihiro Mikogami
  • Patent number: 5811497
    Abstract: Disclosed herein is a curing catalyst comprising at least one compound which is a substituted or unsubstituted aromatic or heteroaromatic compound and having any one of groups (I) --O--R.sub.1, (II) --O--CY--R.sub.1, or (III) --O--CY--X--R.sub.1, the groups being directly bonded to the armoatic or heteroaromatic ring, in a number of 1 to 10 wherein R.sub.1 may be the same or different and is a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, X is O or NH and Y is O or S. Furthermore, an epoxy resin composition comprising the curing catalyst is disclosed.
    Type: Grant
    Filed: September 11, 1995
    Date of Patent: September 22, 1998
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shuzi Hayase, Yoshihiko Nakano, Shinji Murai, Yukihiro Mikogami
  • Patent number: 5578697
    Abstract: A polyimide precursor having a molecular structure obtained by polymerizing (a) 0.97 to 1.03 molar equivalent of a diamine component containing 0.40 molar equivalent or more of aromatic diamine compound represented by the general formula (DA1), and (b) an acid anhydride component containing (1-n.sub.1 /2) molar equivalent of a tetracarboxylic dianhydride and n.sub.1 molar equivalent of at least one selected from the group consisting of maleic anhydride and maleic derivative anhydride, wherein n.sub.1 ranges from 0.02 to 0.40.
    Type: Grant
    Filed: March 29, 1995
    Date of Patent: November 26, 1996
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yoshiaki Kawamonzen, Masayuki Oba, Yukihiro Mikogami, Shigeru Matake, Shuzi Hayase, Satoshi Mikoshiba
  • Patent number: 5518864
    Abstract: Disclosed is a photosensitive resin composition, containing a polyamic acid derivative having a repeating unit represented by general formula (1) given below and a photosensitive agent: ##STR1## where, R.sup.1 represents a tetravalent organic group, R.sup.2 represents a divalent organic group, and R.sup.3 and R.sup.4 represent a monovalent organic group, at least one of R.sup.3 and R.sup.4 being an organic group having at least on hydroxyl group bonded to an aromatic ring. A semiconductor substrate is coated with the photosensitive resin composition, followed by exposing the coated film to light through a patterning mask and subsequently applying a development and a heat treatment so as to form a polyimide film pattern. A baking treatment also be applied immediately after the exposure step. The photosensitive resin composition of the present invention performs the function of a positive or negative photoresist film and the function of a polyimide protective film on a semiconductor substrate.
    Type: Grant
    Filed: March 30, 1994
    Date of Patent: May 21, 1996
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masayuki Oba, Rumiko Hayase, Naoko Kihara, Shuzi Hayase, Yukihiro Mikogami, Yoshihiko Nakano, Naohiko Oyasato, Shigeru Matake, Kei Takano
  • Patent number: 5372908
    Abstract: A photosensitive composition comprises a polysilane having a repeating unit represented by formula (1) and a compound which generates an acid upon exposure to light: ##STR1## wherein each of R.sup.1 and R.sup.2 independently represents a hydrogen atom, a substituted or nonsubstituted alkyl group having 1 to 18 carbon atoms, a substituted or nonsubstituted aryl group having 6 to 18 carbon atoms, or a substituted or nonsubstituted aralkyl group having 7 to 22 carbon atoms. This photosensitive composition exhibits a high-sensitivity, and can be formed into a polysilane film pattern having a high-resolution, when it is subjected to exposure to Deep UV light, an EB, an X-ray, or the like, hard baking, and development under appropriate conditions. When an aromatic ring substituted by a hydroxyl group, a substituted or nonsubstituted alkoxyl group, or a substituted or nonsubstituted siloxyl group is introduced in one of side chains R.sup.1 and R.sup.
    Type: Grant
    Filed: July 8, 1992
    Date of Patent: December 13, 1994
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shuji Hayase, Yoshihiko Nakano, Yukihiro Mikogami
  • Patent number: 5362559
    Abstract: Disclosed are a polysilane monomolecular film and a polysilane built-up film formed by building up a plurality of said monomolecular films, said monomolecular film consisting of a polysilane having a repeating unit represented by general formula (1) given below: ##STR1## where, R.sup.1 represents a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms or a substituted or unsubstituted aryl group having 6 to 24 carbon atoms, R.sup.2 represents a divalent hydrocarbon group having 1 to 4 carbon atoms which can be substituted, and X represents hydroxyl group, amino group, carboxyl group, or a hydrophilic group having at least one selected from the group consisting of hydroxyl group, amino group, carboxyl group, amide linkage, ester linkage, carbamate linkage and carbonate linkage. The polysilane monomolecular film and built-up film can be formed on a substrate by an LB technique.
    Type: Grant
    Filed: July 12, 1993
    Date of Patent: November 8, 1994
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shuji Hayase, Yoshihiko Nakano, Yukihiro Mikogami, Akira Yoshizumi, Shinji Murai, Rikako Kani
  • Patent number: 5348835
    Abstract: Disclosed is a photosensitive resin composition, containing a polyamic acid derivative having a repeating unit represented by general formula (1) given below and a photosensitive agent: ##STR1## where, R.sup.1 represents a tetravalent organic group, R.sup.2 represents a divalent organic group, and R.sup.3 and R.sup.4 represent a monovalent organic group, at least one of R.sup.3 and R.sup.4 being an organic group having at least on hydroxyl group bonded to an aromatic ring. A semiconductor substrate is coated with the photosensitive resin composition, followed by exposing the coated film to light through a patterning mask and subsequently applying a development and a heat treatment so as to form a polyimide film pattern. A baking treatment also be applied immediately after the exposure step. The photosensitive resin composition of the present invention performs the function of a positive or negative photoresist film and the function of a polyimide protective film on a semiconductor substrate.
    Type: Grant
    Filed: September 27, 1991
    Date of Patent: September 20, 1994
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masayuki Oba, Rumiko Hayase, Naoko Kihara, Shuzi Hayase, Yukihiro Mikogami, Yoshihiko Nakano, Naohiko Oyasato, Shigeru Matake, Kei Takano
  • Patent number: 5340684
    Abstract: A photosensitive composition contains a polyimide constituted by a repeating unit having a hydroxyl group and a repeating unit having a siloxane bond, or a repeating unit having a hydroxyl group, a repeating unit having a siloxane bond, and a repeating unit other than these two repeating units, and a photosensitive agent consisting of an ester compound or an amide-ester compound of naphthoquinonediazidesulfonic acid or benzoquinonediazidesulfonic acid. The photosensitive composition is used as a passivation film of a semiconductor device or a photoresist.
    Type: Grant
    Filed: November 29, 1993
    Date of Patent: August 23, 1994
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Rumiko Hayase, Masayuki Oba, Naoko Kihara, Yukihiro Mikogami
  • Patent number: 5336736
    Abstract: Disclosed is a polysilane having a repeating unit represented by general formula (1) given below. Also disclosed is a polysilane composition, comprising a polysilane having a repeating unit represented by general formula (2) given below and a cross linking agent: ##STR1## where, each of R.sup.1 and R.sup.3 is hydrogen, a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms or a substituted or unsubstituted aryl group having 6 to 24 carbon atoms; R.sup.2 is a divalent hydrocarbon group having to 24 carbon atoms which can be substituted; R.sup.4 is a covalent bond, or a substituted or unsubstituted alkylene group having 1 to carbon atoms, or a substituted or unsubstituted arylene group having 6 to 24 carbon atoms; each of R.sup.5 to R.sup.9 is hydrogen, a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms, a substituted or unsubstituted aryl group having 6 to 24 carbon atoms, or hydroxyl group, at least one of R.sup.5 to R.sup.
    Type: Grant
    Filed: April 29, 1993
    Date of Patent: August 9, 1994
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yoshihiko Nakano, Shuzi Hayase, Shinji Murai, Yukihiro Mikogami, Akira Yoshizumi
  • Patent number: 5176982
    Abstract: Disclosed is a photosensitive resin composition for forming a polyimide film pattern. The composition contains a polyamic acid and at least one silyl ketone compound represented by general formula (II) given below, ##STR1## where each of R.sup.3 to R.sup.16 is a are substituted or unsubstituted alkyl group having 1 to 12 carbon atoms or a substituted or unsubstituted aromatic group having 6 to 14 carbon atoms, each of R.sup.5 to R.sup.16 may be a substituted or unsubstituted silyl group, and each of l, m, n, s, t and u is 0 or 1, at least one of l, m, n, s, t and u being 1. The composition further contains a sensitizer, as required. A semiconductor substrate is coated with the composition, followed by exposing the coating through a predetermined mask and subsequently developing and heat-treating the coating so as to form a polyimide film pattern.
    Type: Grant
    Filed: July 5, 1991
    Date of Patent: January 5, 1993
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yukihiro Mikogami, Shuzi Hayase, Yoshihiko Nakano
  • Patent number: 4829134
    Abstract: An epoxy resin composition containing an oxazoline compound in an epoxy resin.
    Type: Grant
    Filed: August 11, 1987
    Date of Patent: May 9, 1989
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsuguo Sakamoto, Kazuhiko Kurematsu, Yukihiro Mikogami, Shuichi Suzuki, Cao M. Thai
  • Patent number: 4816496
    Abstract: Disclosed are photocurable compositions which comprise(A) a compound having at least one epoxy group and at least one photocurable unsaturated ethylenic double bond within the same molecule;(B) an organometallic compound and(C) a silicon compound capable of generating silanol group by irradiation of light, or comprise(A) a compound having at least one epoxy group and at least one photocurable unsaturated ethylenic double bond within the same molecule;(E) an epoxy compound;(F) an organic phosphorus compound; and(G) a photosensitizer.The compositions of the present invention have excellent film characteristics such as good adhesion property, light resistance, heat resistance and weathering resistance.
    Type: Grant
    Filed: May 30, 1985
    Date of Patent: March 28, 1989
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Moriyasu Wada, Shuichi Suzuki, Yuusuke Wada, Shuzi Hayase, Yukihiro Mikogami
  • Patent number: 4555324
    Abstract: A porous gas diffusion electrode for use in an air-metal cell or a hydrogen-air (oxygen) cell comprising an electroconductive porous substrate, which has itself on one surface thereof reaction gas feed channels or is to be used with one surface in contact with reaction gas feed channels during use, and which comprises gas impermeable and electrically insulating seals formed of a tetrafluoroethylene-perfluoroalkyl vinyl ether compolymer provided on the substrate at least at both end portions parallel to said reaction gas feed channels, is capable of positively shielding the gas streams at the end portions parallel to the reaction gas feed channels and maintaining electrical insulation.
    Type: Grant
    Filed: May 7, 1984
    Date of Patent: November 26, 1985
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Mitsushi Ueno, Tamotsu Shirogami, Yukihiro Mikogami
  • Patent number: 4309512
    Abstract: A thermosetting resin composition containing as essential resin components (a) a maleimide compound modified with furfuryl alcohol, (b) an epoxy resin and (c) a polyvinyl formal, and a latent curing agent or a curing accelerator which is at least one compound selected from the group consisting of dicyandiamide, boron trifluoride-amine complexes, metal chelate compounds, and silicone compounds and organo-silane compounds having at least one hydroxyl group bonded directly to silicon atom, is found to be capable of B-staging with good storage stability and provides a heat-resistant resin composition having excellent electric characteristics at high temperatures after curing. The composition can suitably be coated on a glass cloth or a mica tape to give a pre-preg tape which can maintain its flexibility for a long time.
    Type: Grant
    Filed: December 3, 1980
    Date of Patent: January 5, 1982
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Yukihiro Mikogami, Takeo Ito, Moriyasu Wada