Patents by Inventor Yukihiro Shimogaki

Yukihiro Shimogaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190135640
    Abstract: Provided is a method of producing a silicon compound material, including the steps of: storing a silicon carbide preform in a reaction furnace; supplying a raw material gas containing methyltrichlorosilane to the reaction furnace to infiltrate the preform with silicon carbide; and controlling and reducing a temperature of a gas discharged from the reaction furnace at a predetermined rate to subject the gas to continuous thermal history, to thereby decrease generation of a liquid or solid by-product derived from the gas.
    Type: Application
    Filed: January 4, 2019
    Publication date: May 9, 2019
    Applicants: IHI Corporation, The University of Tokyo
    Inventors: Yasuyuki FUKUSHIMA, Kozue AKAZAKI, Yasutomo TANAKA, Kazuma AKIKUBO, Takeshi NAKAMURA, Yukihiro SHIMOGAKI, Takeshi MOMOSE, Noboru SATO, Kohei SHIMA, Yuichi FUNATO
  • Patent number: 10221104
    Abstract: A mixed gas containing a precursor gas, an additive gas and a carrier gas is supplied to a preform stored in an electric furnace, and silicon carbide is deposited by chemical vapor deposition or chemical vapor phase impregnation to form a film. The preform includes multiple fiber bundles, and the fiber bundles include multiple fibers. This heat-resistant composite material includes a ceramic fiber preform impregnated with silicon carbide, and producing the composite material involves a step in which silicon carbide is deposited between the fibers to integrate the fibers which configure the fiber bundles, and a step in which silicon carbide is deposited between the fiber bundles to integrate the fiber bundles. Hereby, uniformity of embedding and growth rate of the silicon carbide film are both attained.
    Type: Grant
    Filed: May 26, 2016
    Date of Patent: March 5, 2019
    Assignees: IHI CORPORATION, THE UNIVERSITY OF TOKYO
    Inventors: Takeshi Nakamura, Masato Ishizaki, Kozue Hotozuka, Yasuyuki Fukushima, Yukihiro Shimogaki, Takeshi Momose, Hidetoshi Sugiura, Kohei Shima, Yuichi Funato
  • Patent number: 10167549
    Abstract: In the present embodiment, in the production of a heat-resistant composite material resulting from impregnating a ceramic fiber preform with silicon carbide, a mixed gas containing starting material gas, an additive gas, and a carrier gas is supplied to a substrate having a minute structure such as a preform stored in an electric furnace, silicon carbide is deposited to form a film by means of a chemical vapor deposition method or a chemical vapor infiltration method, and the film formation growth speed and embedding uniformity are controlled by means of the amount of additive gas added to the starting material gas, the starting material gas contains tetramethylsilane, and the additive gas contains a molecule containing chlorine such as methyl chloride or hydrogen chloride. The film formation growth speed and embedding uniformity of the silicon carbide are both achieved.
    Type: Grant
    Filed: June 28, 2016
    Date of Patent: January 1, 2019
    Assignees: IHI CORPORATION, THE UNIVERSITY OF TOKYO
    Inventors: Takeshi Nakamura, Kozue Hotozuka, Yasuyuki Fukushima, Yukihiro Shimogaki, Takeshi Momose, Hidetoshi Sugiura, Kohei Shima, Yuichi Funato
  • Patent number: 9822445
    Abstract: By using chemical vapor deposition or chemical vapor infiltration, silicon carbide is deposited on a preform 100 accommodated in a reaction furnace 11 for film formation, and the amount of additive gas added to raw material gas and carrier gas to be supplied to the reactive furnace 11 is used to control the growth rate and filling uniformity at film formation of silicon carbide. When the film formation of silicon carbide follows a first-order reaction, the amount of added additive gas is used to control the sticking probability of the film-forming species. When the film formation of silicon carbide follows a Langmuir-Hinshelwood rate formula, the amount of added additive gas is used to make a control so that a zero-order reaction region of the Langmuir-Hinshelwood rate formula is used.
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: November 21, 2017
    Assignees: IHI Corporation, The University of Tokyo
    Inventors: Takeshi Nakamura, Masato Ishizaki, Kenji Fuchigami, Kozue Hotozuka, Yukihiro Shimogaki, Takeshi Momose, Yasuyuki Fukushima, Noboru Sato, Yuichi Funato, Hidetoshi Sugiura
  • Publication number: 20160305015
    Abstract: In the present embodiment, in the production of a heat-resistant composite material resulting from impregnating a ceramic fiber preform with silicon carbide, a mixed gas containing starting material gas, an additive gas, and a carrier gas is supplied to a substrate having a minute structure such as a preform stored in an electric furnace, silicon carbide is deposited to form a film by means of a chemical vapor deposition method or a chemical vapor infiltration method, and the film formation growth speed and embedding uniformity are controlled by means of the amount of additive gas added to the starting material gas, the starting material gas contains tetramethylsilane, and the additive gas contains a molecule containing chlorine such as methyl chloride or hydrogen chloride. The film formation growth speed and embedding uniformity of the silicon carbide are both achieved.
    Type: Application
    Filed: June 28, 2016
    Publication date: October 20, 2016
    Applicants: IHI Corporation, The University of Tokyo
    Inventors: Takeshi NAKAMURA, Kozue HOTOZUKA, Yasuyuki FUKUSHIMA, Yukihiro SHIMOGAKI, Takeshi MOMOSE, Hidetoshi SUGIURA, Kohei SHIMA, Yuichi FUNATO
  • Publication number: 20160297716
    Abstract: A mixed gas containing a precursor gas, an additive gas and a carrier gas is supplied to a preform stored in an electric furnace, and silicon carbide is deposited by chemical vapor deposition or chemical vapor phase impregnation to form a film. The preform includes multiple fiber bundles, and the fiber bundles include multiple fibers. This heat-resistant composite material includes a ceramic fiber preform impregnated with silicon carbide, and producing the composite material involves a step in which silicon carbide is deposited between the fibers to integrate the fibers which configure the fiber bundles, and a step in which silicon carbide is deposited between the fiber bundles to integrate the fiber bundles. Hereby, uniformity of embedding and growth rate of the silicon carbide film are both attained.
    Type: Application
    Filed: May 26, 2016
    Publication date: October 13, 2016
    Applicants: IHI Corporation, The University of Tokyo
    Inventors: Takeshi NAKAMURA, Masato ISHIZAKI, Kozue HOTOZUKA, Yasuyuki FUKUSHIMA, Yukihiro SHIMOGAKI, Takeshi MOMOSE, Hidetoshi SUGIURA, Kohei SHIMA, Yuichi FUNATO
  • Publication number: 20150152547
    Abstract: By using chemical vapor deposition or chemical vapor infiltration, silicon carbide is deposited on a preform 100 accommodated in a reaction furnace 11 for film formation, and the amount of additive gas added to raw material gas and carrier gas to be supplied to the reactive furnace 11 is used to control the growth rate and filling uniformity at film formation of silicon carbide. When the film formation of silicon carbide follows a first-order reaction, the amount of added additive gas is used to control the sticking probability of the film-forming species. When the film formation of silicon carbide follows a Langmuir-Hinshelwood rate formula, the amount of added additive gas is used to make a control so that a zero-order reaction region of the Langmuir-Hinshelwood rate formula is used.
    Type: Application
    Filed: February 12, 2015
    Publication date: June 4, 2015
    Applicants: IHI Corporation, The University of Tokyo
    Inventors: Takeshi NAKAMURA, Masato ISHIZAKI, Kenji FUCHIGAMI, Kozue HOTOZUKA, Yukihiro SHIMOGAKI, Takeshi MOMOSE, Yasuyuki FUKUSHIMA, Noboru SATO, Yuichi FUNATO, Hidetoshi SUGIURA
  • Publication number: 20110129686
    Abstract: In a deposition method of forming a compound layer including a metal and an oxide by a supercritical fluid deposition method, a first material for generating the metal and a second material for generating the oxide are supplied to a supercritical fluid. With an increase of a thickness of the compound layer, a ratio of a supplied amount of the first material with respect to a supplied amount of the second material is increased.
    Type: Application
    Filed: September 7, 2010
    Publication date: June 2, 2011
    Applicants: DENSO CORPORATION, The University of Tokyo
    Inventors: Hideo YAMADA, Kazushi ASAMI, Masakazu SUGIYAMA, Yukihiro SHIMOGAKI, Takeshi MOMOSE
  • Publication number: 20110012178
    Abstract: Provided is a semiconductor wafer having decreased interface state density at the semiconductor-insulator interface, a method of manufacturing this semiconductor wafer, and a semiconductor device. Provided is a semiconductor wafer comprising a group 3-5 compound semiconductor layer containing arsenic; and an insulating layer that is an oxide, a nitride, or an oxynitride, wherein arsenic oxides are not detected between the semiconductor layer and the insulating layer. This semiconductor wafer may be such that, when using X-ray photoelectron spectroscopy to observe photoelectron intensity of an element existing between the semiconductor layer and the insulating layer, an oxide peak caused by oxidized arsenic is not detected on a higher bonding energy side of an element peak caused by the arsenic.
    Type: Application
    Filed: March 26, 2009
    Publication date: January 20, 2011
    Inventors: Masakazu Sugiyama, Yukihiro Shimogaki, Masahiko Hata, Osamu Ichikawa
  • Patent number: 7105060
    Abstract: A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow rate of the gaseous source of Ti is reduced, to grow the conductive film further, wherein the first step and the second step are conducted alternately.
    Type: Grant
    Filed: August 13, 2004
    Date of Patent: September 12, 2006
    Assignee: Tokyo Electron Limited
    Inventors: Yukihiro Shimogaki, Yumiko Kawano
  • Publication number: 20050020065
    Abstract: A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow rate of the gaseous source of Ti is reduced, to grow the conductive film further, wherein the first step and the second step are conducted alternately.
    Type: Application
    Filed: August 13, 2004
    Publication date: January 27, 2005
    Applicant: Tokyo Electron Limited
    Inventors: Yukihiro Shimogaki, Yumiko Kawano
  • Patent number: 6793969
    Abstract: A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow rate of the gaseous source of Ti is reduced, to grow the conductive film further, wherein the first step and the second step are conducted alternately.
    Type: Grant
    Filed: August 2, 2002
    Date of Patent: September 21, 2004
    Assignee: Tokyo Electron Limited
    Inventors: Yukihiro Shimogaki, Yumiko Kawano
  • Publication number: 20030148605
    Abstract: A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow rate of the gaseous source of Ti is reduced, to grow the conductive film further, wherein the first step and the second step are conducted alternately.
    Type: Application
    Filed: August 2, 2002
    Publication date: August 7, 2003
    Inventors: Yukihiro Shimogaki, Yumiko Kawano