Patents by Inventor Yukihiro Shimogaki
Yukihiro Shimogaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230073338Abstract: A coated tool in a non-limiting embodiment of the present disclosure includes a base and a coating film located on the base. The coated tool includes a first surface, a second surface adjacent to the first surface, and a cutting edge located on at least a part of a ridge part of the first surface and the second surface. The coating film includes an AlTiN film. The coating film has a first compressive stress ?11 in a first direction which is parallel to a surface of the base and intersects with the cutting edge at an angle of 90°, and a second compressive stress ?22 in a second direction which intersects with the first direction at an angle of 90°. The first compressive stress ?11 is different from the second compressive stress ?22.Type: ApplicationFiled: January 18, 2021Publication date: March 9, 2023Inventors: Hayato KUBO, Takahito TANIBUCHI, Yukihiro SHIMOGAKI, Takeshi MOMOSE, Momoko DEURA
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Publication number: 20230058739Abstract: A coated tool in a non-limiting embodiment of the present disclosure includes a base and a coating film located on the base. The coated tool includes a first surface, a second surface adjacent to the first surface, and a cutting edge located on at least a part of a ridge part of the first surface and the second surface. The coating film includes an AlTiN film including Ti, Al and N. A first Al ratio and a second Al ratio are 0.7 or more. The first Al ratio is Al/(Al+Ti) at a point located 0.1 mm away from the cutting edge, and the second Al ratio is Al/(Al+Ti) at a point located 0.2 mm away from the cutting edge in the first surface. The second Al ratio is larger than the first Al ratio.Type: ApplicationFiled: January 18, 2021Publication date: February 23, 2023Inventors: Takahito TANIBUCHI, Hayato KUBO, Yukihiro SHIMOGAKI, Takeshi MOMOSE, Momoko DEURA
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Patent number: 11229893Abstract: Provided is a method of producing a silicon compound material, including the steps of: storing a silicon carbide preform in a reaction furnace; supplying a raw material gas containing methyltrichlorosilane to the reaction furnace to infiltrate the preform with silicon carbide; and controlling and reducing a temperature of a gas discharged from the reaction furnace at a predetermined rate to subject the gas to continuous thermal history, to thereby decrease generation of a liquid or solid by-product derived from the gas.Type: GrantFiled: January 4, 2019Date of Patent: January 25, 2022Assignees: IHI Corporation, The University of TokyoInventors: Yasuyuki Fukushima, Kozue Akazaki, Yasutomo Tanaka, Kazuma Akikubo, Takeshi Nakamura, Yukihiro Shimogaki, Takeshi Momose, Noboru Sato, Kohei Shima, Yuichi Funato
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Publication number: 20190135640Abstract: Provided is a method of producing a silicon compound material, including the steps of: storing a silicon carbide preform in a reaction furnace; supplying a raw material gas containing methyltrichlorosilane to the reaction furnace to infiltrate the preform with silicon carbide; and controlling and reducing a temperature of a gas discharged from the reaction furnace at a predetermined rate to subject the gas to continuous thermal history, to thereby decrease generation of a liquid or solid by-product derived from the gas.Type: ApplicationFiled: January 4, 2019Publication date: May 9, 2019Applicants: IHI Corporation, The University of TokyoInventors: Yasuyuki FUKUSHIMA, Kozue AKAZAKI, Yasutomo TANAKA, Kazuma AKIKUBO, Takeshi NAKAMURA, Yukihiro SHIMOGAKI, Takeshi MOMOSE, Noboru SATO, Kohei SHIMA, Yuichi FUNATO
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Patent number: 10221104Abstract: A mixed gas containing a precursor gas, an additive gas and a carrier gas is supplied to a preform stored in an electric furnace, and silicon carbide is deposited by chemical vapor deposition or chemical vapor phase impregnation to form a film. The preform includes multiple fiber bundles, and the fiber bundles include multiple fibers. This heat-resistant composite material includes a ceramic fiber preform impregnated with silicon carbide, and producing the composite material involves a step in which silicon carbide is deposited between the fibers to integrate the fibers which configure the fiber bundles, and a step in which silicon carbide is deposited between the fiber bundles to integrate the fiber bundles. Hereby, uniformity of embedding and growth rate of the silicon carbide film are both attained.Type: GrantFiled: May 26, 2016Date of Patent: March 5, 2019Assignees: IHI CORPORATION, THE UNIVERSITY OF TOKYOInventors: Takeshi Nakamura, Masato Ishizaki, Kozue Hotozuka, Yasuyuki Fukushima, Yukihiro Shimogaki, Takeshi Momose, Hidetoshi Sugiura, Kohei Shima, Yuichi Funato
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Patent number: 10167549Abstract: In the present embodiment, in the production of a heat-resistant composite material resulting from impregnating a ceramic fiber preform with silicon carbide, a mixed gas containing starting material gas, an additive gas, and a carrier gas is supplied to a substrate having a minute structure such as a preform stored in an electric furnace, silicon carbide is deposited to form a film by means of a chemical vapor deposition method or a chemical vapor infiltration method, and the film formation growth speed and embedding uniformity are controlled by means of the amount of additive gas added to the starting material gas, the starting material gas contains tetramethylsilane, and the additive gas contains a molecule containing chlorine such as methyl chloride or hydrogen chloride. The film formation growth speed and embedding uniformity of the silicon carbide are both achieved.Type: GrantFiled: June 28, 2016Date of Patent: January 1, 2019Assignees: IHI CORPORATION, THE UNIVERSITY OF TOKYOInventors: Takeshi Nakamura, Kozue Hotozuka, Yasuyuki Fukushima, Yukihiro Shimogaki, Takeshi Momose, Hidetoshi Sugiura, Kohei Shima, Yuichi Funato
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Patent number: 9822445Abstract: By using chemical vapor deposition or chemical vapor infiltration, silicon carbide is deposited on a preform 100 accommodated in a reaction furnace 11 for film formation, and the amount of additive gas added to raw material gas and carrier gas to be supplied to the reactive furnace 11 is used to control the growth rate and filling uniformity at film formation of silicon carbide. When the film formation of silicon carbide follows a first-order reaction, the amount of added additive gas is used to control the sticking probability of the film-forming species. When the film formation of silicon carbide follows a Langmuir-Hinshelwood rate formula, the amount of added additive gas is used to make a control so that a zero-order reaction region of the Langmuir-Hinshelwood rate formula is used.Type: GrantFiled: February 12, 2015Date of Patent: November 21, 2017Assignees: IHI Corporation, The University of TokyoInventors: Takeshi Nakamura, Masato Ishizaki, Kenji Fuchigami, Kozue Hotozuka, Yukihiro Shimogaki, Takeshi Momose, Yasuyuki Fukushima, Noboru Sato, Yuichi Funato, Hidetoshi Sugiura
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Publication number: 20160305015Abstract: In the present embodiment, in the production of a heat-resistant composite material resulting from impregnating a ceramic fiber preform with silicon carbide, a mixed gas containing starting material gas, an additive gas, and a carrier gas is supplied to a substrate having a minute structure such as a preform stored in an electric furnace, silicon carbide is deposited to form a film by means of a chemical vapor deposition method or a chemical vapor infiltration method, and the film formation growth speed and embedding uniformity are controlled by means of the amount of additive gas added to the starting material gas, the starting material gas contains tetramethylsilane, and the additive gas contains a molecule containing chlorine such as methyl chloride or hydrogen chloride. The film formation growth speed and embedding uniformity of the silicon carbide are both achieved.Type: ApplicationFiled: June 28, 2016Publication date: October 20, 2016Applicants: IHI Corporation, The University of TokyoInventors: Takeshi NAKAMURA, Kozue HOTOZUKA, Yasuyuki FUKUSHIMA, Yukihiro SHIMOGAKI, Takeshi MOMOSE, Hidetoshi SUGIURA, Kohei SHIMA, Yuichi FUNATO
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Publication number: 20160297716Abstract: A mixed gas containing a precursor gas, an additive gas and a carrier gas is supplied to a preform stored in an electric furnace, and silicon carbide is deposited by chemical vapor deposition or chemical vapor phase impregnation to form a film. The preform includes multiple fiber bundles, and the fiber bundles include multiple fibers. This heat-resistant composite material includes a ceramic fiber preform impregnated with silicon carbide, and producing the composite material involves a step in which silicon carbide is deposited between the fibers to integrate the fibers which configure the fiber bundles, and a step in which silicon carbide is deposited between the fiber bundles to integrate the fiber bundles. Hereby, uniformity of embedding and growth rate of the silicon carbide film are both attained.Type: ApplicationFiled: May 26, 2016Publication date: October 13, 2016Applicants: IHI Corporation, The University of TokyoInventors: Takeshi NAKAMURA, Masato ISHIZAKI, Kozue HOTOZUKA, Yasuyuki FUKUSHIMA, Yukihiro SHIMOGAKI, Takeshi MOMOSE, Hidetoshi SUGIURA, Kohei SHIMA, Yuichi FUNATO
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Publication number: 20150152547Abstract: By using chemical vapor deposition or chemical vapor infiltration, silicon carbide is deposited on a preform 100 accommodated in a reaction furnace 11 for film formation, and the amount of additive gas added to raw material gas and carrier gas to be supplied to the reactive furnace 11 is used to control the growth rate and filling uniformity at film formation of silicon carbide. When the film formation of silicon carbide follows a first-order reaction, the amount of added additive gas is used to control the sticking probability of the film-forming species. When the film formation of silicon carbide follows a Langmuir-Hinshelwood rate formula, the amount of added additive gas is used to make a control so that a zero-order reaction region of the Langmuir-Hinshelwood rate formula is used.Type: ApplicationFiled: February 12, 2015Publication date: June 4, 2015Applicants: IHI Corporation, The University of TokyoInventors: Takeshi NAKAMURA, Masato ISHIZAKI, Kenji FUCHIGAMI, Kozue HOTOZUKA, Yukihiro SHIMOGAKI, Takeshi MOMOSE, Yasuyuki FUKUSHIMA, Noboru SATO, Yuichi FUNATO, Hidetoshi SUGIURA
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Publication number: 20110129686Abstract: In a deposition method of forming a compound layer including a metal and an oxide by a supercritical fluid deposition method, a first material for generating the metal and a second material for generating the oxide are supplied to a supercritical fluid. With an increase of a thickness of the compound layer, a ratio of a supplied amount of the first material with respect to a supplied amount of the second material is increased.Type: ApplicationFiled: September 7, 2010Publication date: June 2, 2011Applicants: DENSO CORPORATION, The University of TokyoInventors: Hideo YAMADA, Kazushi ASAMI, Masakazu SUGIYAMA, Yukihiro SHIMOGAKI, Takeshi MOMOSE
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Publication number: 20110012178Abstract: Provided is a semiconductor wafer having decreased interface state density at the semiconductor-insulator interface, a method of manufacturing this semiconductor wafer, and a semiconductor device. Provided is a semiconductor wafer comprising a group 3-5 compound semiconductor layer containing arsenic; and an insulating layer that is an oxide, a nitride, or an oxynitride, wherein arsenic oxides are not detected between the semiconductor layer and the insulating layer. This semiconductor wafer may be such that, when using X-ray photoelectron spectroscopy to observe photoelectron intensity of an element existing between the semiconductor layer and the insulating layer, an oxide peak caused by oxidized arsenic is not detected on a higher bonding energy side of an element peak caused by the arsenic.Type: ApplicationFiled: March 26, 2009Publication date: January 20, 2011Inventors: Masakazu Sugiyama, Yukihiro Shimogaki, Masahiko Hata, Osamu Ichikawa
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Patent number: 7105060Abstract: A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow rate of the gaseous source of Ti is reduced, to grow the conductive film further, wherein the first step and the second step are conducted alternately.Type: GrantFiled: August 13, 2004Date of Patent: September 12, 2006Assignee: Tokyo Electron LimitedInventors: Yukihiro Shimogaki, Yumiko Kawano
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Publication number: 20050020065Abstract: A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow rate of the gaseous source of Ti is reduced, to grow the conductive film further, wherein the first step and the second step are conducted alternately.Type: ApplicationFiled: August 13, 2004Publication date: January 27, 2005Applicant: Tokyo Electron LimitedInventors: Yukihiro Shimogaki, Yumiko Kawano
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Patent number: 6793969Abstract: A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow rate of the gaseous source of Ti is reduced, to grow the conductive film further, wherein the first step and the second step are conducted alternately.Type: GrantFiled: August 2, 2002Date of Patent: September 21, 2004Assignee: Tokyo Electron LimitedInventors: Yukihiro Shimogaki, Yumiko Kawano
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Publication number: 20030148605Abstract: A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow rate of the gaseous source of Ti is reduced, to grow the conductive film further, wherein the first step and the second step are conducted alternately.Type: ApplicationFiled: August 2, 2002Publication date: August 7, 2003Inventors: Yukihiro Shimogaki, Yumiko Kawano