Abstract: The invention is to provide an underwater communication device and an underwater communication method that can be applied to mobile communication in water. An underwater communication device 10 includes: a transmitter 12 configured to transmit an electric signal; and a receiver 14 arranged away from the transmitter 12 via water and configured to receive the electric signal, in which the receiver 14 includes an field effect transistor 23 having a channel region 39 provided at a position in contact with the water, and a drive circuit 26 configured to generate a potential difference between a source region 31 and a drain region 33 of the field effect transistor 23.

Abstract: The invention is to provide an underwater communication device and an underwater communication method that can be applied to mobile communication in water. An underwater communication device 10 includes: a transmitter 12 configured to transmit an electric signal; and a receiver 14 arranged away from the transmitter 12 via water and configured to receive the electric signal, in which the receiver 14 includes an field effect transistor 23 having a channel region 39 provided at a position in contact with the water, and a drive circuit 26 configured to generate a potential difference between a source region 31 and a drain region 33 of the field effect transistor 23.

Abstract: An electronic component includes a field effect transistor that functions as a working electrode of an ion sensor and a driving circuit that causes a potential difference between a source electrode and a drain electrode of the field effect transistor. A reference electrode potential of the field effect transistor is fixed.

Abstract: An electronic component includes a field effect transistor that functions as a working electrode of an ion sensor and a driving circuit that causes a potential difference between a source electrode and a drain electrode of the field effect transistor. A reference electrode potential of the field effect transistor is fixed.

Abstract: A method for treating a surface of a diamond thin film according to one aspect of the present invention performs one of a first substitution process for substituting part of hydrogen-terminals of a diamond thin film with fluorine-terminals in the absence of a fluorocarbon deposition on the surface of diamond thin film and a second substitution process for substituting part of hydrogen-terminals of a diamond thin film with fluorine-terminals in the presence of the fluorocarbon deposition on the surface of diamond thin film based on required surface properties of the diamond thin film.

Abstract: A pH sensor may include a reference electrode including a p-channel field effect transistor (FET) whose gate includes a diamond surface having a hydrogen ion insensitive terminal, and a working electrode.

Abstract: A method for treating a surface of a diamond thin film according to one aspect of the present invention performs one of a first substitution process for substituting part of hydrogen-terminals of a diamond thin film with fluorine-terminals in the absence of a fluorocarbon deposition on the surface of diamond thin film and a second substitution process for substituting part of hydrogen-terminals of a diamond thin film with fluorine-terminals in the presence of the fluorocarbon deposition on the surface of diamond thin film based on required surface properties of the diamond thin film.

Abstract: A pH sensor may include a reference electrode including a p-channel field effect transistor (FET) whose gate includes a diamond surface having a hydrogen ion insensitive terminal, and a working electrode.

Abstract: A pH sensor may include a reference electrode including a p-channel field effect transistor (FET) whose gate includes a diamond surface having a hydrogen ion insensitive terminal, and a working electrode.

Abstract: A semiconductor device may include a piezoresistive body of which a resistance value is changed by action of an external force. The piezoresistive body may include a surface layer of diamond. The surface layer may be hydrogen-terminated.

Abstract: A pH sensor may include a reference electrode including a p-channel field effect transistor (FET) whose gate includes a diamond surface having a hydrogen ion insensitive terminal, and a working electrode.

Abstract: This invention relates to a method for analyzing a gene and an analysis device thereof which are suited to be used, for example, as a fully automatic gene analysis device or a fully automatic gene diagnostic device which can be simplified in structure, made compact in size and light in weight, and manufactured at a low cost and in which detection of various kinds of DNA can be conducted rapidly and with precision and analysis of a plurality of genes can be made simultaneously from different kinds of samples by restraining, as much as possible, the use of a valve in an analytic system, thereby preventing admixture of cross contamination.

Abstract: For the purpose of extremely simply carrying out a pre-treatment such as sample preparation including extraction or concentration of a component of interest in a short time when performing a chromatographic analysis, it is intended that a column configured such that the inside of a narrow tube is provided with a porous body having open pore structures across the entire diameter of the tube and along an appropriate length of the tube is used and a sample containing a substance to be measured is allowed to pass through the column to retain and concentrate the substance to be measured within pores of the porous body in the column, and it is also intended to provide a method in which the above described process is conducted as a micro trap when carrying out the pre-treatment of the chromatographic analysis and then the removed substances are introduced into analytical means, a method in which a sample is introduced into a separation column after narrowing the sample band when introducing the sample into a liquid