Patents by Inventor Yukihiro Takifuji

Yukihiro Takifuji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor relay device
    Patent number: 11916547
    Abstract: A semiconductor relay device includes a conversion circuit configured to receive an input signal from outside and pass a first current to a first node based on the input signal. A zener diode has an anode coupled to a second node and a cathode coupled to the first node. A resistor is coupled between the second node and a third node. A number n of diodes are serially coupled. A thyristor has an anode coupled to the first node, a cathode coupled to the second node, and a control terminal coupled to the third node. A transistor has a gate coupled to the first node. An anode of a diode at a first end of the n diodes is coupled to the first node, and a cathode of a diode at a second end of the n diodes is coupled to a third node.
    Type: Grant
    Filed: September 2, 2022
    Date of Patent: February 27, 2024
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
    Inventors: Naoya Takai, Yukihiro Takifuji, Keita Saito, Kazuki Tanaka
  • SEMICONDUCTOR RELAY DEVICE
    Publication number: 20220416787
    Abstract: A semiconductor relay device includes a conversion circuit configured to receive an input signal from outside and pass a first current to a first node based on the input signal. A zener diode has an anode coupled to a second node and a cathode coupled to the first node. A resistor is coupled between the second node and a third node. A number n of diodes are serially coupled. A thyristor has an anode coupled to the first node, a cathode coupled to the second node, and a control terminal coupled to the third node. A transistor has a gate coupled to the first node. An anode of a diode at a first end of the n diodes is coupled to the first node, and a cathode of a diode at a second end of the n diodes is coupled to a third node.
    Type: Application
    Filed: September 2, 2022
    Publication date: December 29, 2022
    Inventors: Naoya TAKAI, Yukihiro TAKIFUJI, Keita SAITO, Kazuki TANAKA
  • Semiconductor relay device
    Patent number: 11476850
    Abstract: A semiconductor relay device includes a conversion circuit configured to receive an input signal from outside and pass a first current to a first node based on the input signal. A zener diode has an anode coupled to a second node and a cathode coupled to the first node. A resistor is coupled between the second node and a third node. A number n of diodes are serially coupled. A thyristor has an anode coupled to the first node, a cathode coupled to the second node, and a control terminal coupled to the third node. A transistor has a gate coupled to the first node. An anode of a diode at a first end of the n diodes is coupled to the first node, and a cathode of a diode at a second end of the n diodes is coupled to a third node.
    Type: Grant
    Filed: September 13, 2021
    Date of Patent: October 18, 2022
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventors: Naoya Takai, Yukihiro Takifuji, Keita Saito, Kazuki Tanaka
  • SEMICONDUCTOR RELAY DEVICE
    Publication number: 20220311436
    Abstract: A semiconductor relay device includes a conversion circuit configured to receive an input signal from outside and pass a first current to a first node based on the input signal. A zener diode has an anode coupled to a second node and a cathode coupled to the first node. A resistor is coupled between the second node and a third node. A number n of diodes are serially coupled. A thyristor has an anode coupled to the first node, a cathode coupled to the second node, and a control terminal coupled to the third node. A transistor has a gate coupled to the first node. An anode of a diode at a first end of the n diodes is coupled to the first node, and a cathode of a diode at a second end of the n diodes is coupled to a third node.
    Type: Application
    Filed: September 13, 2021
    Publication date: September 29, 2022
    Inventors: Naoya Takai, Yukihiro Takifuji, Keita Saito, Kazuki Tanaka