Abstract: An object of the present invention is to provide a chemical liquid storage body which hardly causes short and defects in a formed wiring board in a case where a chemical liquid stored in the chemical liquid storage body is used in a wiring forming process including photolithography after the chemical liquid storage body is preserved for a certain period of time.

Abstract: An object of the present invention is to provide a chemical liquid purification method which makes it possible to obtain a chemical liquid having excellent defect inhibition performance. Another object of the present invention is to provide a chemical liquid. The chemical liquid purification method according to an embodiment of the present invention is a chemical liquid purification method including obtaining a chemical liquid by purifying a substance to be purified containing an organic solvent, in which a content of the stabilizer in the substance to be purified with respect to the total mass of the substance to be purified is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.

Abstract: Provided are a defect removal device and a defect removal method capable of removing defects of a semiconductor substrate with high accuracy, and a pattern forming method and a method of manufacturing an electronic device using the semiconductor substrate from which defects on a surface are removed.

Abstract: Provided are an analysis apparatus and an analysis method capable of analyzing a smaller defect on a surface of a semiconductor substrate. An analysis apparatus includes a surface defect measurement unit that measures presence or absence of a defect on a surface of a semiconductor substrate, and obtains positional information on the surface of the semiconductor substrate for the defect on the surface of the semiconductor substrate, and an analysis section that performs inductively coupled plasma mass spectrometry by irradiating the defect on the surface of the semiconductor substrate with laser light based on the positional information of the defect on the surface of the semiconductor substrate, and collecting an analysis sample obtained by the irradiation using a carrier gas.

Abstract: Provided are a method of manufacturing a semiconductor device in which the purity of a chemical liquid containing an organic solvent is more easily managed, a method of washing a semiconductor manufacturing apparatus, and a simpler method of measuring the cleanliness of a washing solution. A method of manufacturing a semiconductor device has Step 1 of bringing an oscillator into contact with a chemical liquid containing an organic solvent as a main component to obtain the amount of change in the resonance frequency of the oscillator resulting from the contact with the chemical liquid, Step 2 of confirming whether or not the amount of change in the resonance frequency of the chemical liquid falls within a permissible range of the amount of change in the resonance frequency based on the preset purity of the chemical liquid, and Step 3 of using the chemical liquid confirmed in Step 2 in manufacturing a semiconductor device.

Abstract: Provided are a method for inspecting a chemical solution, the method being able to analyze minute foreign matter in the chemical solution, a method for producing a chemical solution, a method for controlling a chemical solution, a method for producing a semiconductor device, a method for inspecting a resist composition, the method being able to analyze minute foreign matter in the resist composition, a method for producing a resist composition, a method for controlling a resist composition, and a method for checking a contamination status of a semiconductor manufacturing apparatus, the method being able to control minute foreign matter in the semiconductor manufacturing apparatus.

Abstract: An object of the present invention is to provide a chemical liquid purification method which makes it possible to obtain a chemical liquid having excellent defect inhibition performance. Another object of the present invention is to provide a chemical liquid. The chemical liquid purification method according to an embodiment of the present invention is a chemical liquid purification method including obtaining a chemical liquid by purifying a substance to be purified containing an organic solvent, in which a content of the stabilizer in the substance to be purified with respect to the total mass of the substance to be purified is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.

Abstract: An object of the present invention is to provide a chemical liquid purification method which makes it possible to obtain a chemical liquid having excellent defect inhibition performance. Another object of the present invention is to provide a chemical liquid. The chemical liquid purification method according to an embodiment of the present invention is a chemical liquid purification method including obtaining a chemical liquid by purifying a substance to be purified containing an organic solvent, in which a content of the stabilizer in the substance to be purified with respect to the total mass of the substance to be purified is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.

Abstract: A container for storing a chemical fluid for manufacturing an electronic material, in which after an inspection solution charges the container and stored at 25° C. for 30 days, a sum of a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by a Single Particle ICP-MASS method in the inspection solution is 100 ppt or less.

Abstract: In a method of manufacturing a chemical fluid for manufacturing an electronic material, a method of reducing particulate metal in the chemical fluid is selected according to a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by SP ICP-MS in the chemical fluid, and at least one of the concentration of particulate metal including an iron atom, the concentration of particulate metal including a copper atom, or the concentration of particulate metal including a zinc atom is reduced by using the selected reducing method.

Abstract: An object of the present invention is to provide a chemical liquid purification method which makes it possible to obtain a chemical liquid having excellent defect inhibition performance. The chemical liquid purification method according to an embodiment of the present invention is a chemical liquid purification method including obtaining a chemical liquid by filtering a substance to be purified containing an organic solvent by using two or more kinds of filters having different pore sizes, in which a supply pressure P1 of the substance to be purified supplied to a filter Fmax having a maximum pore size X1 among the two or more kinds of filters and a supply pressure P2 of the substance to be purified supplied to a filter Fmin having a minimum pore size X2 among the two or more kinds of filters satisfy P1>P2.

Abstract: An object of the present invention is to provide a resist pattern forming method that has excellent pattern forming properties and generates few residues and a semiconductor chip manufacturing method. The resist pattern forming method according to an embodiment of the present invention has a step A of forming a film on a substrate by using an actinic ray-sensitive or radiation-sensitive resin composition containing a photoacid generator and a resin whose polarity is increased by the action of an acid, a step B of exposing the film, step C of developing the exposed film by using an alkali developer, a step D of washing the developed film by using water, and a step E of washing the film washed in the step D by using a chemical liquid containing an alcohol-based solvent, in which the alkali developer contains a quaternary ammonium salt.

Abstract: An object of the present invention is to provide a chemical liquid storage body which hardly causes short and defects in a formed wiring board in a case where a chemical liquid stored in the chemical liquid storage body is used in a wiring forming process including photolithography after the chemical liquid storage body is preserved for a certain period of time.

Abstract: An object of the present invention is to provide a chemical liquid purification method which makes it possible to obtain a chemical liquid having excellent defect inhibition performance. The chemical liquid purification method according to an embodiment of the present invention is a chemical liquid purification method including obtaining a chemical liquid by filtering a substance to be purified containing an organic solvent by using two or more kinds of filters having different pore sizes, in which a supply pressure P1 of the substance to be purified supplied to a filter Fmax having a maximum pore size X1 among the two or more kinds of filters and a supply pressure P2 of the substance to be purified supplied to a filter Fmin having a minimum pore size X2 among the two or more kinds of filters satisfy P1>P2.

Abstract: An object of the present invention is to provide a chemical liquid purification method which makes it possible to obtain a chemical liquid having excellent defect inhibition performance. Another object of the present invention is to provide a chemical liquid. The chemical liquid purification method according to an embodiment of the present invention is a chemical liquid purification method including obtaining a chemical liquid by purifying a substance to be purified containing an organic solvent, in which a content of the stabilizer in the substance to be purified with respect to the total mass of the substance to be purified is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.

Abstract: An object of the present invention is to provide a solution which is excellent in both the temporal stability of an organic solvent and the defect inhibition properties. Another object of the present invention is to provide a solution storage body storing the solution, an actinic ray-sensitive or radiation-sensitive resin composition containing the solution, and a pattern forming method and a manufacturing method of a semiconductor device using the solution. The solution of the present invention is a solution containing an organic solvent and a stabilizer, in which a content of the stabilizer with respect to a total mass of the solution is 0.1 to 50 mass ppm.

Abstract: In a method of manufacturing a chemical fluid for manufacturing an electronic material, a method of reducing particulate metal in the chemical fluid is selected according to a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by SP ICP-MS in the chemical fluid, and at least one of the concentration of particulate metal including an iron atom, the concentration of particulate metal including a copper atom, or the concentration of particulate metal including a zinc atom is reduced by using the selected reducing method.