Abstract: Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 ?m or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body.

Abstract: An external resonator type light emitting system includes a light source oscillating a semiconductor laser light and a grating device providing an external resonator with the light source. The light source includes an active layer oscillating the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (4) are satisfied.

Abstract: Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 ?m or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body.

Abstract: An external resonator type light emitting system includes a light source oscillating a semiconductor laser light and a grating device providing an external resonator with the light source. The light source includes an active layer oscillating the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (4) are satisfied.

Abstract: An evanescent light generation element for oscillating evanescent light from an optical waveguide to a clad layer, including a 0.1 ?m-10 ?m thin layer composed of a ferroelectric single crystal or oriented crystal having first and second principal surfaces, and incident side end and exit side end surfaces. A ridge optical waveguide is formed in the thin layer and extends between the incident and exit side end surfaces of the thin layer. At least a pair of grooves is formed on both sides of the ridge optical waveguide in the thin layer and opened at the first principal surface of the thin layer. A clad layer is provided on the first principal surface or the second principal surface. A width of the ridge optical waveguide at the exit side end surface is less than a width of the ridge optical waveguide at the incident side end surface.

Abstract: Provided is a surface light-emitting device comprising a substrate composed of an oriented polycrystalline zinc oxide sintered body in a plate shape, a light emitting functional layer provided on the substrate, and an electrode provided on the light emitting functional layer. According to the present invention, a surface light-emitting device having high luminous efficiency can be inexpensively provided.

Abstract: An external resonator type light emitting system includes a light source oscillating a semiconductor laser light and a grating device providing an external resonator with the light source. The light source includes an active layer oscillating the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (4) are satisfied.

Abstract: A voltage nonlinear resistive element 10 includes a resistor 14 containing a joined body 12 in which a zinc oxide ceramic layer 12a composed mainly of zinc oxide and having a volume resistivity of 1.0×10?1 ?cm or less is joined to a bismuth oxide layer 12b composed mainly of bismuth oxide, and a pair of electrodes 16 and 18 disposed on the resistor 14 such that an electrically conductive path passes through a junction between the zinc oxide ceramic layer 12a and the bismuth oxide layer 12b. In this element 10, the zinc oxide ceramic layer 12a of the joined body 12 has a lower volume resistivity than before. This can result in a lower clamping voltage in a high-current region than before.

Abstract: The voltage nonlinear resistive element 10 includes a resistor 14 containing a joined body 12 in which a zinc oxide ceramic layer 12a composed mainly of zinc oxide and having a volume resistivity of less than 1.0×10?2 ?cm is joined to a rare-earth metal oxide layer 12b composed mainly of a rare-earth metal oxide, and a pair of electrodes 16 and 18 disposed on the resistor 14 such that an electrically conductive path passes through a junction between the zinc oxide ceramic layer 12a and the rare-earth metal oxide layer 12b. In this element 10, the zinc oxide ceramic layer 12a of the joined body 12 has a lower volume resistivity than before. This can result in a lower clamping voltage in a high electric current region than before.

Abstract: An external resonator type light emitting system includes a light source oscillating a semiconductor laser light and a grating device providing an external resonator with the light source. The light source includes an active layer oscillating the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (4) are satisfied.

Abstract: Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 ?m or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body.

Abstract: An external resonator type light emitting system includes a light source oscillating a semiconductor laser light and a grating device providing an external resonator with the light source. The light source includes an active layer oscillating the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (4) are satisfied.

Abstract: A ceramic compact having a patterned conductor is obtained by coating the patterned conductor with a slurry and then by hardening the slurry. The slurry is prepared by mixing a thermosetting resin precursor, a ceramic powder, and a medium. In the ceramic compact, an isocyanate- or isothiocyanate-containing gelling agent and a hydroxyl-containing polymer are reacted and hardened to produce a thermosetting resin. The hydroxyl-containing polymer is preferably a butyral resin, an ethylcellulose-based resin, a polyethyleneglycol-based resin, or a polyether-based resin.

Abstract: A ceramic compact is provided having a patterned conductor is obtained by coating the patterned conductor with a slurry and then hardening the slurry. The slurry is prepared by mixing a thermosetting resin precursor, a ceramic powder, and a medium. In the ceramic compact, an isocyanate- or isothiocyanate-containing gelling agent and a hydroxyl-containing polymer are reacted and hardened to produce a thermosetting resin. The hydroxyl-containing polymer is preferably a butyral resin, an ethylcellulose-based resin, a polyethyleneglycol-based resin, or a polyether-based resin.

Abstract: A ceramic compact having a patterned conductor is obtained by coating the patterned conductor with a slurry and then by hardening the slurry. The slurry is prepared by mixing a thermosetting resin precursor, a ceramic powder, and a medium. In the ceramic compact, an isocyanate- or isothiocyanate-containing gelling agent and a hydroxyl-containing polymer are reacted and hardened to produce a thermosetting resin. The hydroxyl-containing polymer is preferably a butyral resin, an ethylcellulose-based resin, a polyethyleneglycol-based resin, or a polyether-based resin.

Abstract: The water droplet generating system includes a vessel, an opening/closing valve, a moisture absorbent member, and a condenser portion. The vessel has an opening portion. The opening/closing valve opens and closes the opening portion. The water absorbent member absorbs and releases water vapor depending on a change of humidity. The condenser portion is communicated with the inside of the vessel and cools water vapor released from the moisture absorbent member to be at a dew point of water vapor or less. When the opening portion is opened, the moisture absorbent member absorbs water vapor in atmosphere. When the opening portion is closed, the moisture absorbent member releases water vapor, and the condenser portion condenses water vapor, which is released from the moisture absorbent member, to generate a water droplet.

Abstract: Means for a thermally conductive and electrically insulating material containing an AlN crystal mainly comprising AlN, and a production method thereof. In production, a molten aluminum layer is formed on an AlN substrate with at least its surface comprising AlN in an atmosphere of a non-oxidizing gas, and the molten aluminum layer is then heated in an atmosphere of N2 gas to form an AlN crystal which mainly comprises an AlN layer. The means are also a thermally conductive and electrically insulating material having an AlN crystal and an Al gradient layer, and a production method thereof. In production, a heating step of forming a molten aluminum layer on the AlN layer and heating it in an atmosphere of N2 gas is repeated at least twice or more. At this time, the amount of the N2 gas dissolved in the molten aluminum layer is decreased as the heating step is repeated.

Abstract: Means for a thermally conductive and electrically insulating material 1 containing an AlN crystal 150 mainly comprising AlN, and a production method thereof. In production, a molten aluminum layer is formed on an AlN substrate 11 with at least its surface comprising AlN in an atmosphere of a non-oxidizing gas, and the molten aluminum layer is then heated in an atmosphere of N2 gas to form an AlN crystal 150 which mainly comprises an AlN layer 125. The means are also a thermally conductive and electrically insulating material having an AlN crystal and an Al gradient layer, and a production method thereof. In production, a heating step of forming a molten aluminum layer 15 on the AlN layer 125 and heating it in an atmosphere of N2 gas is repeated at least twice or more. At this time, the amount of the N2 gas dissolved in the molten aluminum layer is decreased as the heating step is repeated.

Abstract: A piezoelectric actuator capable of being driven with a high electric field intensity, obtaining a larger displacement and being high in electric conducting reliability of electrodes, and comprising: at least one cell defined by two side walls, a substrate and a ceiling wall; the two side walls being disposed on the substrate and being covered with the ceiling wall to define one cell, at least the two side walls comprising piezoelectric/electrostrictive devices, and the piezoelectric/electrostrictive devices being capable of changing a volume of the cell by displacement of the walls. Each of the piezoelectric/electrostrictive devices comprises a plurality of layered piezoelectric/electrostrictive bodies and electrodes which are alternately stacked, and end portions of the electrodes are embedded in the piezoelectric/electrostrictive bodies in at least the internal side of the cell.

Abstract: A microdevice has an electron emitter including a memory for accumulating electric charges corresponding to an input voltage, for emitting electrons corresponding to the electric charges accumulated in said memory; and an amplifier connected to a power supply and including a collector electrode for capturing the electrons emitted from the electron emitter. The atmosphere between at least the electron emitter and the collector electrode is a vacuum. When the electrons emitted from the electron emitter are captured by the collector electrode of the amplifier, a collector current flows between the collector electrode and the electron emitter to amplify the input voltage.