Abstract: An electromagnetic-wave absorber and reflector includes a base material, and a plurality of unit patterns made of conductive material disposed at even intervals on a surface of the base material. In the electromagnetic-wave absorber and reflector, a portion of each of the plurality of unit patterns overlaps with a portion of adjacent one of the plurality of unit patterns in a stacking direction of the base material, and the portion of each of the plurality of unit patterns and the portion of adjacent one of the plurality of unit patterns have a dielectric layer interposed in between.

Abstract: An electromagnetic wave resonant structure is provided that includes a conductive portion and a non-conductive portion, and the non-conductive portion includes a mixed region of a part of the conductive region and an insulator.

Abstract: A coating liquid for forming an n-type oxide semiconductor film, the coating liquid including: a Group A element, which is at least one selected from the group consisting of Sc, Y, Ln, B, Al, and Ga; a Group B element, which is at least one of In and Tl; a Group C element, which is at least one selected from the group consisting of Group 4 elements, Group 5 elements, Group 6 elements, Group 7 elements, Group 8 elements, Group 9 elements, Group 10 elements, Group 14 elements, Group 15 elements, and Group 16 elements; and a solvent.

Abstract: A field-effect transistor including: a source electrode and a drain electrode; a gate electrode; a semiconductor layer; and a gate insulating layer, wherein the gate insulating layer is an oxide insulator film including A element and B element, the A element being one or more selected from the group consisting of Zr and Hf and the B element being one or more selected from the group consisting of Be and Mg.

Abstract: To provide a field-effect transistor, containing: a substrate; a protective layer; a gate insulating layer formed between the substrate and the protective layer; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed at least between the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is formed at an opposite side to the side where the semiconductor layer is provided, with the gate insulating layer being between the gate electrode and the semiconductor layer, and is in contact with the gate insulating layer, wherein the protective layer contains a metal oxide composite, which contains at least Si and alkaline earth metal.

Abstract: A coating liquid for forming a metal oxide film, the coating liquid including: a metal source, which is at least one selected from the group consisting of inorganic salts, oxides, hydroxides, metal complexes, and organic acid salts; at least one alkali selected from the group consisting of organic alkalis and inorganic alkalis; and a solvent.

Abstract: Provided are a bracket for an anti-vibration device, and a method for manufacturing the same, in which increase of weight and peeling of a reinforcing portion are suppressed. A bracket (1) has: a reinforcing portion (20) extending in a surrounding direction of the surrounding portion (10), having ends (21) in both directions of the surrounding direction, and being fixed to an outer surface of the portion (10); and ribs (30) formed on an outer circumference of the portion (10) so as to span the ends (21) of the reinforcing portion (20) in the surrounding direction of the portion (10). The portion (10) and the ribs (30) are made of synthetic resin. A method for manufacturing the bracket (1) includes a step of injecting synthetic resin serving as the portion (10) and the ribs (30) into a mold cavity where a reinforcing member serving as the portion (20) is set.

Abstract: A field-effect transistor including a semiconductor layer formed of an n-type metal oxide semiconductor, wherein the n-type metal oxide semiconductor includes indium oxide, wherein the indium oxide is n-type doped through introduction of one or more kinds of cations as dopants, and wherein the n-type metal oxide semiconductor has a peak detected at an angle corresponding to a (222) plane of indium oxide having a bixbite structure in an X-ray diffraction method using a two-dimensional detector.

Abstract: A anti-vibration device (1) includes a bracket (4) made of a synthetic resin and cylindrical metal fittings for fastening (5), where the bracket (4) and the metal fittings for fastening (5) are integrally formed. A vibration input position (P) is a position that does not coincide with a virtual line (L1) passing through central axes (O5) of a through holes (5h) of two metal fittings for fastening (5) in a planar view; the metal fitting for fastening (5) has a flange portion (51); and the flange portion 51 has a first outermost peripheral edge (51a) and a second outermost peripheral edge (51b), where a length (L51a) to the first outermost peripheral edge (51a) is longer than a length (L51b) to the second outermost peripheral edge (51b) based on the center axis (O5) of the through hole (5h).

Abstract: An inorganic EL element including: an anode; a hole transporting layer; a light emitting layer; an electron transporting layer; and a cathode, the anode, the hole transporting layer, the light emitting layer, the electron transporting layer, and the cathode being stacked, wherein the hole transporting layer is an oxide film, the light emitting layer is an oxide film, and the electron transporting layer is an oxide film.

Abstract: A sputtering target for an insulating oxide film, the sputtering target including a sintered body including a lanthanum oxide and at least one selected from the group consisting of a beryllium oxide, a magnesium oxide, a calcium oxide, a strontium oxide, and a barium oxide, wherein lanthanum has highest molar ratio among elements other than oxygen contained in the sintered body.

Abstract: (Object) To miniaturize a field-effect transistor. (Means of Achieving the Object) A field-effect transistor includes a semiconductor film formed on a base, a gate insulating film formed on a part of the semiconductor film, a gate electrode formed on the gate insulating film, and a source electrode and a drain electrode formed in contact with the semiconductor film, wherein a thickness of the source electrode and the drain electrode is smaller than a thickness of the gate insulating film, and the gate insulating film includes a region that is not in contact with the source electrode or the drain electrode.

Abstract: A field-effect transistor includes a substrate; a source electrode, a drain electrode, and a gate electrode that are formed on the substrate; a semiconductor layer by which a channel is formed between the source electrode and the drain electrode when a predetermined voltage is applied to the gate electrode; and a gate insulating layer provided between the gate electrode and the semiconductor layer. The gate insulating layer is formed of an amorphous composite metal oxide insulating film including one or two or more alkaline-earth metal elements and one or two or more elements selected from a group consisting of Ga, Sc, Y, and lanthanoid except Ce.

Abstract: A coating liquid for forming an oxide, the coating liquid including: silicon (Si); and B element, which is at least one alkaline earth metal, wherein when a concentration of an element of the Si is denoted by CA mg/L and a total of concentrations of the B element is denoted by CB mg/L, a total of concentrations of sodium (Na) and potassium (K) in the coating liquid is (CA+CB)/(1×102) mg/L or less and a total of concentrations of chromium (Cr), molybdenum (Mo), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), and copper (Cu) in the coating liquid is (CA+CB)/(1×102) mg/L or less.

Abstract: A field-effect transistor including: a source electrode and a drain electrode; a gate electrode; a semiconductor layer; and a gate insulating layer, wherein the gate insulating layer is an oxide insulator film including A element and B element, the A element being one or more selected from the group consisting of Zr and Hf and the B element being one or more selected from the group consisting of Be and Mg.

Abstract: A coating liquid for forming an oxide, the coating liquid including: A element, which is at least one alkaline earth metal; and B element, which is at least one selected from the group consisting of gallium (Ga), scandium (Sc), yttrium (Y), and lanthanoid, wherein when a total of concentrations of the A element is denoted by CA mg/L and a total of concentrations of the B element is denoted by CB mg/L, a total of concentrations of sodium (Na) and potassium (K) in the coating liquid is (CA+CB)/103 mg/L or less and a total of concentrations of chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), and copper (Cu) in the coating liquid is (CA+CB)/103 mg/L or less.

Abstract: A coating liquid for forming an oxide or oxynitride insulator film, the coating liquid including: A element; at least one selected from the group consisting of B element and C element; and a solvent, wherein the A element is at least one selected from the group consisting of Sc, Y, Ln (lanthanoid), Sb, Bi, and Te, the B element is at least one selected from the group consisting of Ga, Ti, Zr, and Hf, the C element is at least one selected from the group consisting of Group 2 elements in a periodic table, and the solvent includes at least one selected from the group consisting of an organic solvent having a flash point of 21° C. or more but less than 200° C. and water.

Abstract: A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; an active layer, which is disposed between the source electrode and the drain electrode and is formed of an oxide semiconductor; and a gate insulating layer, which is disposed between the gate electrode and the active layer, the source electrode and the drain electrode each including a metal region formed of a metal and an oxide region formed of one or more metal oxides, and a part of the oxide region in each of the source electrode and the drain electrode being in contact with the active layer, and rest of the oxide region being in contact with one or more components other than the active layer.

Abstract: A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu2O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu2O and x and y satisfy the following expressions: 0?x<100 and x+y=100, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.

Abstract: An inorganic EL element including: an anode; a hole transporting layer; a light emitting layer; an electron transporting layer; and a cathode, the anode, the hole transporting layer, the light emitting layer, the electron transporting layer, and the cathode being stacked, wherein the hole transporting layer is an oxide film, the light emitting layer is an oxide film, and the electron transporting layer is an oxide film.