Abstract: A semiconductor photosensor device which outputs a detection result when a trigger signal is inputted, comprises: a photodiode current arithmetic circuit which is in an operating state regardless of whether before or after the input of the trigger signal, and which outputs a photocurrent generated by light irradiation; a first amplifier which is in an operating state regardless of whether before or after the input of the trigger signal, and which amplifier and outputs the output of the photodiode current arithmetic circuit; and a second amplifier which is in a non-operating state before the input of the trigger signal, wherein the second amplifier shifts to an operating state upon receiving the trigger signal, and amplifies and outputs the output of the first amplifier.

Abstract: An optical semiconductor device includes: a photo detector section which includes: a first semiconductor layer of a first conductivity type formed on a surface of a semiconductor substrate of the first conductivity type, a second semiconductor layer of a second conductivity type formed on a surface of the first semiconductor layer, and an antireflection film formed on a surface of the second semiconductor layer and preventing reflection of incident light; and a circuit element section which includes: a circuit element formed on the second semiconductor layer on the semiconductor substrate, and a passivation film covering an uppermost electrode layer among electrode layers constituting the circuit element and formed out of a same material as a material of the antireflection film.

Abstract: A semiconductor photosensor device which outputs a detection result when a trigger signal is inputted, comprises: a photodiode current arithmetic circuit which is in an operating state regardless of whether before or after the input of the trigger signal, and which outputs a photocurrent generated by light irradiation; a first amplifier which is in an operating state regardless of whether before or after the input of the trigger signal, and which amplifies and outputs the output of the photodiode current arithmetic circuit; and a second amplifier which is in a non-operating state before the input of the trigger signal, wherein the second amplifier shifts to an operating state upon receiving the trigger signal, and amplifies and outputs the output of the first amplifier.

Abstract: An optical semiconductor device includes: a photo detector section which includes: a first semiconductor layer of a first conductivity type formed on a surface of a semiconductor substrate of the first conductivity type, a second semiconductor layer of a second conductivity type formed on a surface of the first semiconductor layer, and an antireflection film formed on a surface of the second semiconductor layer and preventing reflection of incident light; and a circuit element section which includes: a circuit element formed on the second semiconductor layer on the semiconductor substrate, and a passivation film covering an uppermost electrode layer among electrode layers constituting the circuit element and formed out of a same material as a material of the antireflection film.

Abstract: An optical semiconductor device includes: a photo detector section which includes: a first semiconductor layer of a first conductivity type formed on a surface of a semiconductor substrate of the first conductivity type, a second semiconductor layer of a second conductivity type formed on a surface of the first semiconductor layer, and an antireflection film formed on a surface of the second semiconductor layer and preventing reflection of incident light; and a circuit element section which includes: a circuit element formed on the second semiconductor layer on the semiconductor substrate, and a passivation film covering an uppermost electrode layer among electrode layers constituting the circuit element and formed out of a same material as a material of the antireflection film.

Abstract: A semiconductor photosensor device has a semiconductor substrate, a semiconductor layer overlying the semiconductor substrate while being separated therefrom by a dielectric film, a first photodiode formed in the semiconductor layer to be disposed adjacent to a top surface of the semiconductor layer, a second photodiode formed in the semiconductor layer to be underlain the first photodiode, and a signal processing circuit formed on said semiconductor layer for processing output signals of said first and second photodiodes.

Abstract: An optical semiconductor device includes: a photo detector section which includes: a first semiconductor layer of a first conductivity type formed on a surface of a semiconductor substrate of the first conductivity type, a second semiconductor layer of a second conductivity type formed on a surface of the first semiconductor layer, and an antireflection film formed on a surface of the second semiconductor layer and preventing reflection of incident light; and a circuit element section which includes: a circuit element formed on the second semiconductor layer on the semiconductor substrate, and a passivation film covering an uppermost electrode layer among electrode layers constituting the circuit element and formed out of a same material as a material of the antireflection film.