Abstract: To prevent deterioration induced by wire bonding in a laser device incorporating a semiconductor laser element having a nitride semiconductor laid on top of a nitride semiconductor substrate, the position at which a wire (301) is bonded to an electrode (113) formed on the top surface of a semiconductor layered structure is located off the area right above a dislocation (crystal defect)-concentrated region (X) of the substrate. Concentration of dislocations in the substrate spreads to the layered structure, producing a dislocation-concentrated region in the part of the layered structure located right above the dislocation-concentrated region of the substrate. If a wire is bonded above this region, the pressure applied when the wire is bonded causes the metal of which the electrode is made to diffuse along the concentrated dislocations, lowering the quality of the layered structure and thus resulting in deterioration of the element.

Abstract: A semiconductor laser device as one example of semiconductor light-emitting devices includes a semiconductor laser chip and a submount serving respectively as a semiconductor light-emitting device chip and a mount member, the semiconductor laser chip including a GaN substrate and a stack. The semiconductor laser chip is bonded to a mount surface of the submount by means of solder, with the stack facing the mount surface. The submount includes a material having a higher thermal expansion coefficient than GaN which is a material for the GaN substrate.

Abstract: To prevent deterioration induced by wire bonding in a laser device incorporating a semiconductor laser element having a nitride semiconductor laid on top of a nitride semiconductor substrate, the position at which a wire (301) is bonded to an electrode (113) formed on the top surface of a semiconductor layered structure is located off the area right above a dislocation (crystal defect)-concentrated region (X) of the substrate. Concentration of dislocations in the substrate spreads to the layered structure, producing a dislocation-concentrated region in the part of the layered structure located right above the dislocation-concentrated region of the substrate. If a wire is bonded above this region, the pressure applied when the wire is bonded causes the metal of which the electrode is made to diffuse along the concentrated dislocations, lowering the quality of the layered structure and thus resulting in deterioration of the element.

Abstract: A semiconductor laser device as one example of semiconductor light-emitting devices includes a semiconductor laser chip and a submount serving respectively as a semiconductor light-emitting device chip and a mount member, the semiconductor laser chip including a GaN substrate and a stack. The semiconductor laser chip is bonded to a mount surface of the submount by means of solder, with the stack facing the mount surface. The submount includes a material having a higher thermal expansion coefficient than GaN which is a material for the GaN substrate.