Patents by Inventor Yukiko TOJO

Yukiko TOJO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing method of semiconductor device, manufacturing method of electronic appliance, semiconductor device, display device, memory device, and electronic appliance
    Patent number: 9947802
    Abstract: A semiconductor device is manufactured by forming an oxide layer, forming an insulating layer and a sacrificial layer over the oxide layer, forming a conductive layer over the insulating layer and the sacrificial layer, and performing heat treatment after the formation of the conductive layer so that a first mixed layer is formed in a region of the oxide layer that is in contact with the conductive layer and a second mixed layer is formed in a region of the sacrificial layer that is in contact with the conductive layer. The first mixed layer includes at least one of elements included in the conductive layer. The second mixed layer includes at least one of elements included in the conductive layer. The resistance value of the first mixed layer is smaller than that of the oxide layer.
    Type: Grant
    Filed: September 19, 2016
    Date of Patent: April 17, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masayuki Kimura, Yukiko Tojo
  • MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF ELECTRONIC APPLIANCE, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, MEMORY DEVICE, AND ELECTRONIC APPLIANCE
    Publication number: 20170092779
    Abstract: A semiconductor device is manufactured by forming an oxide layer, forming an insulating layer and a sacrificial layer over the oxide layer, forming a conductive layer over the insulating layer and the sacrificial layer, and performing heat treatment after the formation of the conductive layer so that a first mixed layer is formed in a region of the oxide layer that is in contact with the conductive layer and a second mixed layer is formed in a region of the sacrificial layer that is in contact with the conductive layer. The first mixed layer includes at least one of elements included in the conductive layer. The second mixed layer includes at least one of elements included in the conductive layer. The resistance value of the first mixed layer is smaller than that of the oxide layer.
    Type: Application
    Filed: September 19, 2016
    Publication date: March 30, 2017
    Inventors: Masayuki KIMURA, Yukiko TOJO