Abstract: A booster circuit configured to boost a supplied voltage and provide a booster circuit output includes: an oscillator circuit configured to generate a clock signal; a charge pump circuit configured to provide a charge pump output by boosting the supplied voltage with the use of the clock signal; a detection circuit configured to detect a voltage of the booster circuit output and output a detection signal; and an output circuit configured to connect and disconnect the charge pump output to and from the booster circuit output. The oscillator circuit controls activation and deactivation of an output of the oscillator circuit in accordance with the detection signal, and the output circuit controls disconnection of the output circuit in accordance with the detection signal.

Abstract: In a semiconductor memory device, the output of a regulator is coupled to the inputs of first and second switches, the output of the first switch is coupled to a path for supplying the drain voltage of a memory cell in the first mode, and the output of the second switch is coupled to a path for supplying the gate voltage of the memory cell in the second mode. A fourth switch is placed in parallel with the second switch: the output of the fourth switch is coupled to the output of the second switch, to supply the gate voltage of the memory cell in the first mode. Thus, one regulator is used as both the regulator for the drain voltage of the memory cell and the regulator for the gate voltage of the memory cell.

Abstract: When a plurality of non-volatile memory cells in a memory cell array are simultaneously written, bit lines of the plurality of non-volatile memory cells are connected to M data lines, where M is an integer of two or more, based on a column address signal. N switches, where N is an integer of one or more, and a switch control circuit for controlling the N switches, are provided for each data line. The M switch control circuits control the M×N switches to change the levels or apply periods of drain voltages applied to the bit lines of the plurality of memory cells on a memory cell-by-memory cell basis.

Abstract: In a semiconductor memory device, the output of a regulator is coupled to the inputs of first and second switches, the output of the first switch is coupled to a path for supplying the drain voltage of a memory cell in the first mode, and the output of the second switch is coupled to a path for supplying the gate voltage of the memory cell in the second mode. A fourth switch is placed in parallel with the second switch: the output of the fourth switch is coupled to the output of the second switch, to supply the gate voltage of the memory cell in the first mode. Thus, one regulator is used as both the regulator for the drain voltage of the memory cell and the regulator for the gate voltage of the memory cell.

Abstract: When a plurality of non-volatile memory cells in a memory cell array are simultaneously written, bit lines of the plurality of non-volatile memory cells are connected to M data lines, where M is an integer of two or more, based on a column address signal. N switches, where N is an integer of one or more, and a switch control circuit for controlling the N switches, are provided for each data line. The M switch control circuits control the M×N switches to change the levels or apply periods of drain voltages applied to the bit lines of the plurality of memory cells on a memory cell-by-memory cell basis.

Abstract: Each boosting cell includes: a first n-transistor having a diode connection; a second n-transistor whose gate and drain are connected to a power supply voltage and whose source is connected to the source of the first n-transistor; and a boosting capacitor provided between the drain of the first n-transistor and a boosting clock input terminal to which a clock signal is input. The boosting capacitor is connected to n auxiliary boosting capacitors in parallel via connection switching circuits controlled with boosting ability switching signals as control signals input from the outside.

Abstract: Each boosting cell includes: a first n-transistor having a diode connection; a second n-transistor whose gate and drain are connected to a power supply voltage and whose source is connected to the source of the first n-transistor; and a boosting capacitor provided between the drain of the first n-transistor and a boosting clock input terminal to which a clock signal is input. The boosting capacitor is connected to n auxiliary boosting capacitors in parallel via connection switching circuits controlled with boosting ability switching signals as control signals input from the outside.