Abstract: A gas sensor including a pump electrode and a method for manufacturing a conductive paste for forming the pump electrode. When the pump electrode constituting an electrochemical pump cell for adjusting an oxygen partial pressure inside a gas sensor to measure a concentration of a gas component in a measurement gas by a current-limiting method is formed of a cermet of a noble metal and an oxide having oxygen ion conductivity, the noble metal contains a first noble metal having a catalytic activity, and a second noble metal having a catalytic activity suppressing ability to suppress the catalytic activity of the first noble metal with respect to an oxide gas except for oxygen, and an abundance ratio of the second noble metal with respect to the first noble metal in a particle surface of the first noble metal existing in the pump electrode is to be 0.01 to 0.3.

Abstract: A gas sensor including a pump electrode and a method for manufacturing a conductive paste for forming the pump electrode. When the pump electrode constituting an electrochemical pump cell for adjusting an oxygen partial pressure inside a gas sensor to measure a concentration of a gas component in a measurement gas by a current-limiting method is formed of a cermet of a noble metal and an oxide having oxygen ion conductivity, the noble metal contains a first noble metal having a catalytic activity, and a second noble metal having a catalytic activity suppressing ability to suppress the catalytic activity of the first noble metal with respect to an oxide gas except for oxygen, and an abundance ratio of the second noble metal with respect to the first noble metal in a particle surface of the first noble metal existing in the pump electrode is to be 0.01 to 0.3.

Abstract: An electron-emitting device includes a lower electrode, an emitter section formed from a dielectric material, and an upper electrode having fine through holes formed therein. When a drive voltage is applied between the lower electrode and the upper electrode, the electron-emitting device emits electrons from the emitter section through the fine through holes of the upper electrode. A protective film of oxide (e.g., silicon oxide) is formed on the upper surface of the emitter section. Thus, the upper surface of the emitter section is protected from attack of ionized gas molecules produced during electron-emitting operations. As a result, the upper surface of the emitter section becomes unlikely to be metalized, and thus, the amount of emitted electrons is unlikely to drop with the number of electron-emitting operations.

Abstract: An aluminum nitride sintered body has characteristics such that an amount of total metal elements other than aluminum is smaller than 100 ppm, and a volume resistivity at room temperature is greater than 1.0×109 &OHgr;·cm and is smaller than 1.0×1013 &OHgr;·cm. A metal including member has such a construction that a metal member is embedded in the aluminum nitride sintered body mentioned above. An electrostatic chuck is made by the metal including member mentioned above. In the metal including member mentioned above in which the metal member is embedded in the aluminum nitride sintered body mentioned above, a volume resistivity thereof can be controlled without adding a low resistance material in aluminum nitride.

Abstract: In AlN crystal grains constituting a sintered body, is contained: 150 ppm-0.5 wt. %, preferably at most 0.1 wt.%, of at least one rare earth element (as oxide thereof); at most 900 ppm, preferably at most 500 ppm of at least one metal impurity except rare earth elements; and preferably at least 0.5 wt. % of oxygen measured by an electron probe X-ray microanalyzer. The grains have an average grain diameter of preferably at least 3.0 .mu.m and show a main peak in the wavelength range of 350-370 nm of spectrum obtained by a cathode luminescence method. The sintered body composed of AlN crystal grains has a volume resistivity at room temperature of at most 1.0.times.10.sup.12 .OMEGA..multidot.cm.

Abstract: An aluminum nitride sintered body has characteristics such that an amount of total metal elements other than aluminum is smaller than 100 ppm, and a volume resistivity at room temperature is greater than 1.0.times.10.sup.9 .OMEGA..multidot.cm and is smaller than 1.0.times.10.sup.13 .OMEGA..multidot.cm. A metal including member has such a construction that a metal member is embedded in the aluminum nitride sintered body mentioned above. An electrostatic chuck is made by the metal including member mentioned above. In the metal including member mentioned above in which the metal member is embedded in the aluminum nitride sintered body mentioned above, a volume resistivity thereof can be controlled without adding a low resistance material in aluminum nitride.

Abstract: An aluminum nitride sintered body is characterized by having a g-value of an unpaired electron in a spectrum of an electron spin resonance being not less than 2.0010. The aluminum nitride sintered body is produced by sintering a raw material composed of powdery aluminum nitride at a temperature of not less than 1730.degree. C. to not more than 1920.degree. under a pressure of not less than 80 kg/cm.sup.2.

Abstract: An aluminum nitride sintered body is characterized by having a g-value of an unpaired electron in a spectrum of an electron spin resonance being not less than 2.0010. The aluminum nitride sintered body is produced by sintering a raw material composed of powdery aluminum nitride at a temperature of not less than 1730.degree. C. to not more than 1920.degree. under a pressure of not less than 80 kg/cm.sup.2.