Abstract: According to an embodiment of the present disclosure, the cleaning apparatus includes a cleaning tank body having a body opening and a cleaning space; a lid provided to be openable and closable with respect to the body opening; a mounting stage provided in the cleaning space placing a shell of a wafer storage container; a first ejector that ejects a cleaning liquid into a storage space of the shell; a second ejector that ejects the cleaning liquid into an outer portion of the shell; a first discharge port that discharges the cleaning liquid ejected into the storage space of the shell; a second discharge port that discharges the cleaning liquid that has passed through the outer portion of the shell; and a particle counter that measures particles in the cleaning liquid discharged by the first discharge port.

Abstract: According to one embodiment, an organic film forming apparatus includes a chamber configured to maintain an atmosphere more reduced than an atmospheric pressure, at least one processing room provided inside the chamber and being surrounded by a cover, and an exhaust part configured to exhaust the inside the chamber. The processing room includes an upper heating part including first heaters, a lower heating part including second heaters, and facing the upper heating part, an upper heat equalizing plate provided on the lower heating part side of the upper heating part, a lower heat equalizing plate provided on the upper heating part side of the lower heating part, and workpiece supporters configured to support a workpiece through a gap between the upper and lower heat equalizing plates.

Abstract: According to one embodiment, an organic film forming apparatus includes a chamber configured to maintain an atmosphere more reduced than an atmospheric pressure, at least one processing room provided inside the chamber and being surrounded by a cover, and an exhaust part configured to exhaust the inside the chamber. The processing room includes an upper heating part including first heaters, a lower heating part including second heaters, and facing the upper heating part, an upper heat equalizing plate provided on the lower heating part side of the upper heating part, a lower heat equalizing plate provided on the upper heating part side of the lower heating part, and workpiece supporters configured to support a workpiece through a gap between the upper and lower heat equalizing plates.

Abstract: According to one embodiment, a processing apparatus includes a rinsing section configured to rinse a processing liquid on a surface of a workpiece with a rinse liquid and a drying section configured to dry the surface of the workpiece. The drying section includes a chamber, a nozzle provided inside the chamber and configured to jet a gas toward the surface of the workpiece, an air flow control unit provided between the rinsing section and a space inside the chamber provided with the nozzle, and a plurality of transport rollers arranged along a transport direction of the workpiece. The air flow control unit includes a first opening provided on a side of receiving the workpiece and a second opening provided on a side of releasing the workpiece. Opening area of the second opening is smaller than opening area of the first opening.

Abstract: A processing apparatus includes: a processing chamber configured to contain a workpiece; a first nozzle provided in the processing chamber, the first nozzle discharging vapor onto the workpiece; a wall enclosing the processing chamber; a fluid channel provided inside the wall; a fluid inlet; and a fluid outlet. The fluid inlet is provided in communication with the fluid channel. The fluid outlet is provided in communication with the fluid channel, where a fluid flows into the fluid inlet, passes through the fluid channel, and flows out of the fluid outlet. A processing method for processing a workpiece moving in a processing chamber, the processing method includes: discharging a vapor from a first nozzle toward the workpiece while flowing a fluid through a fluid channel which is provided inside a wall, the wall enclosing the processing chamber.

Abstract: A processing apparatus includes: a tank configured to store water; vapor generating unit configured to turn the water supplied from the tank into vapor; a processing chamber in which vapor supplied from the vapor generating unit is used to remove residues from a workpiece; cooling unit; and filtering unit. The cooling unit cools waste liquid ejected from the processing chamber. The filtering unit is provided between the cooling unit and the tank, and the filtering unit filters the waste liquid cooled in the cooling unit. A processing method includes: supplying vapor into a processing chamber; removing residues from a workpiece using the vapor; cooling waste liquid containing the removed residues to precipitate the residues as solids; and filtering the waste liquid containing the precipitates.

Abstract: A processing apparatus includes: a tank configured to store water; vapor generating unit configured to turn the water supplied from the tank into vapor; a processing chamber in which vapor supplied from the vapor generating unit is used to remove residues from a workpiece; cooling unit; and filtering unit. The cooling unit cools waste liquid ejected from the processing chamber. The filtering unit is provided between the cooling unit and the tank, and the filtering unit filters the waste liquid cooled in the cooling unit. A processing method includes: supplying vapor into a processing chamber; removing residues from a workpiece using the vapor; cooling waste liquid containing the removed residues to precipitate the residues as solids; and filtering the waste liquid containing the precipitates.

Abstract: A processing apparatus includes: a processing chamber configured to contain a workpiece; a first nozzle provided in the processing chamber, the first nozzle discharging vapor onto the workpiece; a wall enclosing the processing chamber; a fluid channel provided inside the wall; a fluid inlet; and a fluid outlet. The fluid inlet is provided in communication with the fluid channel. The fluid outlet is provided in communication with the fluid channel, where a fluid flows into the fluid inlet, passes through the fluid channel, and flows out of the fluid outlet. A processing method for processing a workpiece moving in a processing chamber, the processing method includes: discharging a vapor from a first nozzle toward the workpiece while flowing a fluid through a fluid channel which is provided inside a wall, the wall enclosing the processing chamber.

Abstract: A processing apparatus includes: a processing chamber configured to process a workpiece; a moving unit configured to move the workpiece in the processing chamber; a first nozzle; a partition member; an inlet provided in communication with the downstream space; and an outlet provided in communication with the upstream space. The first nozzle has a discharge port configured to discharge a processing liquid or a processing gas. The discharge port is opposed to a moving path of the workpiece and the processing liquid or the processing gas is discharged from the discharge port in a discharge direction directed to an upstream side of a moving direction of the workpiece relative to a direction perpendicular to the moving direction. The partition member partitions a space above the moving path in the processing chamber, and the space is partitioned at a position of the first nozzle into an upstream space on the upstream side of the moving direction and a downstream space on a downstream side of the moving direction.

Abstract: An apparatus for processing a substrate in which the substrate is successively processed with different kinds of process solution. A spin chuck supports the substrate. A driving source rotates the spin chuck A nozzle member supplies a first process solution prepared by mixing sulfuric acid and a hydrogen peroxide solution at a predetermined mixing ratio to the substrate. A switching mechanism selects the sulfuric acid, the hydrogen peroxide solution and the second process solution supplied to the nozzle member A concentration adjusting mechanism adjusts the ratio of sulfuric acid to the hydrogen peroxide solution, which collectively form the first process solution, supplied to the nozzle member. A control device controls the supply of sulfuric acid, the hydrogen peroxide solution and the second process solution, which is switched by the switching mechanism.

Abstract: A substrate is processed with a first process solution prepared by mixing sulfuric acid with a hydrogen peroxide solution, followed by processing the substrate with a second process solution. After the substrate is processed with the first process solution, the supply of sulfuric acid is stopped, with the hydrogen peroxide alone being supplied to the substrate. Then, the supply of the hydrogen peroxide solution is stopped, and the substrate is rinsed with a second process solution. The particular processing makes it possible to prevent the second process solution from reacting with sulfuric acid.

Abstract: A substrate is processed with a first process solution prepared by mixing sulfuric acid with a hydrogen peroxide solution, followed by processing the substrate with a second process solution. After the substrate is processed with the first process solution, the supply of sulfuric acid is stopped, with the hydrogen peroxide alone being supplied to the substrate. Then, the supply of the hydrogen peroxide solution is stopped, and the substrate is rinsed with a second process solution. The particular processing makes it possible to prevent the second process solution from reacting with sulfuric acid.