Abstract: Selective pattern exposure with high reliability is made possible by a desired pattern of repeated pattern and a non-repeated pattern. Exposure technology is obtained to enable improvement of preparation efficiency of pattern data and to secure inspection of an aperture pattern. With the invention, an electron beam is used as focused beam, and a pattern exposure apparatus of a batch transfer system for transferring repeated pattern and non-repeated pattern of plural graphics of a semiconductor integrated circuit or the like comprises an EB drawing section for controlling the beam and irradiating beam onto a sample, a control I/O section, a drawing control section and a data storage section. In the EB drawing section, a semiconductor wafer is mounted on a platform, and in the path of the electron beam from the electron beam source to the stage, a first mask, a blanking electrode, an electron lens, a first deflector, a second deflector, a second mask and a third deflector are installed.

Abstract: Selective pattern exposure with high reliability is made possible by a desired pattern of repeated pattern and a non-repeated pattern. Exposure technology is obtained to enable improvement of preparation efficiency of pattern data and to secure inspection of an aperture pattern. With the invention, an electron beam is used as focused beam, and a pattern exposure apparatus of a batch transfer system for transferring repeated pattern and non-repeated pattern of plural graphics of a semiconductor integrated circuit or the like comprises an EB drawing section for controlling the beam and irradiating beam onto a sample, a control I/O section, a drawing control section and a data storage section. In the EB drawing section, a semiconductor wafer is mounted on a platform, and in the path of the electron beam from the electron beam source to the stage, a first mask, a blanking electrode, an electron lens, a first deflector, a second deflector, a second mask and a third deflector are installed.

Abstract: A charged particle beam exposure apparatus includes an irradiator for irradiating a sample with a charged particle beam, an analog controller for analog controlling the charged particle beam, a digital controller for digital controlling the analog controller, and a digital transmission path connecting the analog controller to the digital controller. The analog controller is disposed inside a room, and the digital controller is disposed outside the room.

Abstract: Not only for a memory device having a high repeatabitlity but also for a device having a low repeatability, there can be realized an electron beam lithography method which can carry out high speed processing of the device with a less number of lithography shots as well as an apparatus therefor. An input pattern is classified into repetitive and non-repetitive patterns. The classified non-repetitive pattern is further classified into unit areas, i.e., repetitive and no-repetitive unit patterns. Next, the non-repetitive unit patterns are converted into lithography data, while the repetitive unit patterns and repetitive patterns are composed on the lithography data of the non-repetitive unit patterns. A result of composing the repetitive unit patterns and repetitive patterns and the lithography data of the non-repetitive unit patterns is sorted according to a lithography sequence and output as the lithography data.

Abstract: A column section is disposed within a thermostatic chamber within a clean room, a section for analog controlling each portion of the column section is disposed within the clean room and outside of the thermostatic chamber, and a section for digital controlling the analog control section is disposed outside of the clean room.

Abstract: An electron beam lithography apparatus is disclosed which has an aperture plate provided with an aperture including an array of repeated unit patterns and an ordinary aperture of a rectangular shape. A region free of the influence of a proximity effect is delineated using the former aperture, and a region affected by the proximity effect is delineated using the latter aperture. The number of repeated unit patterns included in the former aperture is determined considering the number of repeated unit patterns included in a pattern array to be delineated on a substrate. Thereby, the number of electron beam shots is reduced. A plurality of apertures having slightly different aperture widths may be provided for always keeping a pattern line width constant.

Abstract: An electron beam lithographic method in which a sample is irradiated with an electron beam, wherein an extreme point of a contour of a pattern is calculated and a lithographic area is divided into a first region that is surrounded by straight lines drawn from the extreme point in parallel with the x-axis and the y-axis of the sample and by said pattern, and second regions in order to be lithographed.