Abstract: Polishing compositions are disclosed which contribute to improvement of level difference performance (in particular, erosion). The polishing composition used for polishing an object to be polished includes abrasive grains and a dispersing medium, wherein the abrasive grains have an average primary particle size of 40 nm or less, and the number of coarse particles having a particle size of 0.2 to 1,600 ?m in the abrasive grains is 20,000 or less per 1 cm3 of the polishing composition.

Abstract: An object of the present invention is to provide a polishing composition which can sufficiently improve a polishing speed of an object to be polished having a silicon-oxygen bond such as a silicon oxide film or a polishing speed of an object to be polished having a silicon-nitrogen bond such as a silicon nitride film. Providing a polishing composition including: (1) an organic compound which has an action site interacting with an object to be polished having a silicon-oxygen bond or a silicon-nitrogen bond and an acceleration site accelerating an access of a component polishing an object to be polished to the object to be polished; (2) abrasive grains; and (3) a dispersing medium.

Abstract: To provide a technology by which, on the occasion of polishing an object to be polished including: (a) material having silicon-nitrogen bonds; and (b) other material, the ratio of the polishing speed for the material (a) with respect to the polishing speed for the material (b) can be increased. The polishing composition of the present invention is a polishing composition used for polishing an object to be polished including: (a) material having silicon-nitrogen bonds; and (b) other material, the polishing composition including: an organic acid-immobilized silica; and a particular selection ratio improver for increasing the ratio of the polishing speed for the material (a) with respect to the polishing speed for the material (b).

Abstract: An objective of the present invention is to provide a means for sufficiently removing residues remaining on a surface of a polished object to be polished. A composition for surface treatment containing a polymer compound having at least one ionic functional group selected from the group consisting of a sulfonic acid (salt) group, a phosphoric acid (salt) group, a phosphoric acid (salt) group, and an amino group, and water, in which pH is less than 7, and the polymer compound has a pKa of 3 or less and an ionic functional group density of more than 10%.

Abstract: An object of the present invention is to provide a means for sufficiently removing residues remaining on a surface of a polished object to be polished. A composition for surface treatment containing a polymer compound having at least one ionic functional group selected from the group consisting of a sulfonic acid (salt) group, a phosphoric acid (salt) group, a phosphoric acid (salt) group, a carboxylic acid (salt) group, and an amino group, and water, wherein the pH value is less than 7, and the polymer compound has a pKa of 3 or less, and a weight average molecular weight of 3,500 or more and 100,000 or less.

Abstract: A polishing composition for use in polishing an object to be polished, which comprises abrasive grains, a dispersing medium, and an additive, wherein the abrasive grains are surface-modified, the additive is represented by the following formula 1: wherein in the formula 1, X1 is O or NR4, X2 is a single bond or NR5, R1 to R5 are each independently a hydrogen atom; a hydroxy group; a nitro group; a nitroso group; a C1-4 alkyl group optionally substituted with a carboxyl group, an amino group, or a hydroxy group; or CONH2; with the proviso that R2 and R5 may form a ring; when X2 is a single bond, R3 is not a hydrogen atom, or R1 to R3 are not a methyl group; and when X2 is NR5 and three of R1 to R3 and R5 are a hydrogen atom, the other one is not a hydrogen atom or a methyl group; and a pH is 5.0 or less.

Abstract: The present invention provides a means allowing achievement of sufficient planarization of the surface of an object to be polished containing two or more types of materials. The present invention is a polishing method for polishing an object to be polished containing two or more types of materials by using a polishing composition, the polishing method including equalization of the surface zeta potential of the object to be polished.

Abstract: The present invention relates to a surface treatment composition including: at least one water-soluble polymer selected from the following Group A; at least one anionic surfactant selected from the following Group B; and water. Group A: water-soluble polysaccharides, polyvinyl alcohols and derivatives thereof, and polyvinylpyrrolidones and derivatives thereof (with the proviso that compounds included in the following Group B are excluded) Group B: compounds having a sulfonic acid (salt) group, compounds having a sulfuric acid ester (salt) group, compounds having a phosphonic acid (salt) group, compounds having a phosphoric acid (salt) group, and compounds having a phosphinic acid (salt) group. According to the present invention, a surface treatment composition capable of efficiently removing foreign bodies, such as particles and organic residues, remaining on the surface of an object to be polished after polishing is provided.

Abstract: An object of the present invention is to provide a polishing composition enabling polishing of an object to be polished at higher speed. Provided is a polishing composition used for polishing an object to be polished in which the polishing composition contains surface-modified abrasive grains, in which an ionic dispersant is directly modified on the surface of the abrasive grains, and dispersing medium, and aggregation of the abrasive grains is suppressed in the dispersing medium.

Abstract: To provide a novel polishing composition which contributes to improvement of level difference performance (in particular, erosion). The polishing composition used for polishing an object to be polished includes abrasive grains and a dispersing medium, wherein the abrasive grains have an average primary particle size of 40 nm or less, and the number of coarse particles having a particle size of 0.2 to 1,600 ?m in the abrasive grains is 20,000 or less per 1 cm3 of the polishing composition.

Abstract: To provide a technology by which, on the occasion of polishing an object to be polished including: (a) material having silicon-nitrogen bonds; and (b) other material, the ratio of the polishing speed for the material (a) with respect to the polishing speed for the material (b) can be increased. The polishing composition of the present invention is a polishing composition used for polishing an object to be polished including: (a) material having silicon-nitrogen bonds; and (b) other material, the polishing composition including: an organic acid-immobilized silica; and a particular selection ratio improver for increasing the ratio of the polishing speed for the material (a) with respect to the polishing speed for the material (b).

Abstract: A surface treatment composition according to the present invention is used for treating a surface of a polished object to be polished which is obtained after polishing with a polishing composition including ceria, using the surface treatment composition including a (co)polymer having a monomer-derived structural unit having a carboxyl group or a salt group thereof, a residue removing accelerator composed of a specific compound having a hydroxyl group, and a dispersing medium, wherein pH is less than 7.

Abstract: A surface treatment composition according to the present invention is a surface treatment composition having a pH of lower than 7 and used for treating the surface of a polished object to be polished having a layer containing tungsten, and the surface treatment composition contains a tungsten etching inhibitor and water, wherein the tungsten etching inhibitor is a compound containing a monocyclic or fused polycyclic aromatic hydrocarbon ring having two or more substituents, and the substituents contain at least a nitrogen-containing group and an anionic group.

Abstract: The purpose of the present invention is to provide a means to sufficiently remove impurities remaining on the surface of a polishing object after CMP. The polishing composition of the present invention is a polishing composition which is used after polishing has been performed by using a polishing composition (A) including abrasive grains or an organic compound (A), and is characterized by including an organic compound (B) which includes at least one atom selected from the group consisting of a fluorine atom, an oxygen atom, a nitrogen atom, and a chlorine atom and has a molecular weight of 100 or more, a pH adjusting agent, and 0 to 1% by mass of abrasive grains.

Abstract: The purpose of the present invention is to provide a polishing composition which can polish an object to be polished containing oxygen atoms and silicon atoms at high polishing speed, and can reduce generation of scratches on a surface of the object to be polished. A polishing composition used for polishing an object to be polished containing oxygen atoms and silicon atoms, the polishing composition including: abrasive grains A having an average primary particle size of 3 nm or more and 8 nm or less; abrasive grains B having an average primary particle size of more than 8 nm; and a dispersing medium, wherein a content of the abrasive grains B in the polishing composition is larger than a content of the abrasive grains A in the polishing composition, average silanol group density of the abrasive grains A and the abrasive grains B is 2.0 nm?2 or less, and an aspect ratio of the abrasive grains B is more than 1.3 and 2.0 or less.

Abstract: An object of the present invention is to provide a polishing composition enabling polishing of an object to be polished at higher speed. Provided is a polishing composition used for polishing an object to be polished in which the polishing composition contains surface-modified abrasive grains, in which an ionic dispersant is directly modified on the surface of the abrasive grains, and dispersing medium, and aggregation of the abrasive grains is suppressed in the dispersing medium.

Abstract: The present invention provides a means allowing achievement of sufficient planarization of the surface of an object to be polished containing two or more types of materials. The present invention is a polishing method for polishing an object to be polished containing two or more types of materials by using a polishing composition, the polishing method including equalization of the surface zeta potential of the object to be polished.

Abstract: The purpose of the present invention is to provide a polishing composition which can polish an object to be polished containing oxygen atoms and silicon atoms at high polishing speed, and can reduce generation of scratches on a surface of the object to be polished. A polishing composition used for polishing an object to be polished containing oxygen atoms and silicon atoms, the polishing composition including: abrasive grains A having an average primary particle size of 3 nm or more and 8 nm or less; abrasive grains B having an average primary particle size of more than 8 nm; and a dispersing medium, wherein a content of the abrasive grains B in the polishing composition is larger than a content of the abrasive grains A in the polishing composition, average silanol group density of the abrasive grains A and the abrasive grains B is 2.0 nm?2 or less, and an aspect ratio of the abrasive grains B is more than 1.3 and 2.0 or less.

Abstract: An object of the present invention is to provide a polishing composition which can sufficiently improve a polishing speed of an object to be polished having a silicon-oxygen bond such as a silicon oxide film or a polishing speed of an object to be polished having a silicon-nitrogen bond such as a silicon nitride film. Providing a polishing composition including: (1) an organic compound which has an action site interacting with an object to be polished having a silicon-oxygen bond or a silicon-nitrogen bond and an acceleration site accelerating an access of a component polishing an object to be polished to the object to be polished; (2) abrasive grains; and (3) a dispersing medium.

Abstract: The purpose of the present invention is to provide a means to sufficiently remove impurities remaining on the surface of a polishing object after CMP. The polishing composition of the present invention is a polishing composition which is used after polishing has been performed by using a polishing composition (A) including abrasive grains or an organic compound (A), and is characterized by including an organic compound (B) which includes at least one atom selected from the group consisting of a fluorine atom, an oxygen atom, a nitrogen atom, and a chlorine atom and has a molecular weight of 100 or more, a pH adjusting agent, and 0 to 1% by mass of abrasive grains.