Abstract: An electronic component includes: a first lead frame; a second lead frame that is provided on the first lead frame; a first electronic component that is provided between the first lead frame and the second lead frame; a connection member that is provided between the first lead frame and the second lead frame; and an insulating resin that is filled between the first lead frame and the second lead frame so as to cover the first electronic component and the connection member. A first oxide film is provided on a surface of the first lead frame. A second oxide film is provided on a surface of the second lead frame. The first lead frame and the second lead frame are electrically connected to each other by the connection member.

Abstract: A semiconductor device includes: a lead frame that is formed of metal; a wiring substrate that is opposed to the lead frame; an electronic component that is disposed between the lead frame and the wiring substrate; a connection member that connects lead frame and the wiring substrate; and encapsulating resin that is filled between the lead frame and the wiring substrate and covers the electronic component and the connection member. The lead frame includes: a first surface opposed to the wiring substrate and covered by the encapsulating resin; a second surface located on a back side of the first surface and exposed from the encapsulating resin; and a side surface neighboring first surface or the second surface, at least a portion of the side surface exposed from the encapsulating resin.

Abstract: An embedded PCB includes a first substrate, an electronic component mounted on the first substrate, a second substrate provided on a side opposite to the first substrate with the electronic component interposed therebetween, and electrically connected to the first substrate via substrate bonding members, and an encapsulating resin filled between the first and second substrates, covering the electronic component, and also filled between the electronic component and the first substrate. The first substrate includes, on a side closer to the electronic component, pads to be bonded to electrodes of the electronic component via bonding portions, and a protective insulating layer including openings. The pads include outermost peripheral pads in an outermost periphery including four corners of an approximately rectangular area in a plan view, and inner pads in an area surrounded by the outermost peripheral pads.

Abstract: A wiring substrate includes a first metal plate and a second electrode. The first metal plate includes a first electrode, a wiring, and a mount portion for an electronic component. The mount portion includes an upper surface of the wiring. The second electrode is joined to an upper surface of the first electrode. The first electrode is solid. The second electrode is solid.

Abstract: An electronic component includes: a first lead frame; a second lead frame that is provided on the first lead frame; a first electronic component that is provided between the first lead frame and the second lead frame; a connection member that is provided between the first lead frame and the second lead frame; and an insulating resin that is filled between the first lead frame and the second lead frame so as to cover the first electronic component and the connection member. A first oxide film is provided on a surface of the first lead frame. A second oxide film is provided on a surface of the second lead frame. The first lead frame and the second lead frame are electrically connected to each other by the connection member.

Abstract: An embodiment is a wiring substrate that includes a first metal plate. The first metal plate includes a first electrode and a wiring, and the wiring includes a mount portion for an electronic component. The wiring substrate further includes a second metal plate. The second metal plate includes a second electrode diffusion-bonded to an upper surface of the first electrode. The second metal plate includes a first opening that exposes the mount portion. The first opening is large enough to accommodate the electronic component.

Abstract: An electronic component includes: a first lead frame; a second lead frame that is provided on the first lead frame; a first electronic component that is provided between the first lead frame and the second lead frame; a connection member that is provided between the first lead frame and the second lead frame; and an insulating resin that is filled between the first lead frame and the second lead frame so as to cover the first electronic component and the connection member. A first oxide film is provided on a surface of the first lead frame. A second oxide film is provided on a surface of the second lead frame. The first lead frame and the second lead frame are electrically connected to each other by the connection member.

Abstract: A wiring substrate includes a first metal plate and a second electrode. The first metal plate includes a first electrode, a wiring, and a mount portion for an electronic component. The mount portion includes an upper surface of the wiring. The second electrode is joined to an upper surface of the first electrode. The first electrode is solid. The second electrode is solid.

Abstract: An embodiment is a wiring substrate that includes a first metal plate. The first metal plate includes a first electrode and a wiring, and the wiring includes a mount portion for an electronic component. The wiring substrate further includes a second metal plate. The second metal plate includes a second electrode diffusion-bonded to an upper surface of the first electrode. The second metal plate includes a first opening that exposes the mount portion. The first opening is large enough to accommodate the electronic component.

Abstract: A semiconductor device includes: a lead frame that is formed of metal; a wiring substrate that is opposed to the lead frame; an electronic component that is disposed between the lead frame and the wiring substrate; a connection member that connects lead frame and the wiring substrate; and encapsulating resin that is filled between the lead frame and the wiring substrate and covers the electronic component and the connection member. The lead frame includes: a first surface opposed to the wiring substrate and covered by the encapsulating resin; a second surface located on a back side of the first surface and exposed from the encapsulating resin; and a side surface neighboring first surface or the second surface, at least a portion of the side surface exposed from the encapsulating resin.

Abstract: An electronic component includes: a first lead frame; a second lead frame that is provided on the first lead frame; a first electronic component that is provided between the first lead frame and the second lead frame; a connection member that is provided between the first lead frame and the second lead frame; and an insulating resin that is filled between the first lead frame and the second lead frame so as to cover the first electronic component and the connection member. A first oxide film is provided on a surface of the first lead frame. A second oxide film is provided on a surface of the second lead frame. The first lead frame and the second lead frame are electrically connected to each other by the connection member.

Abstract: An electronic component device includes a first lead frame having a first connection terminal and an electronic component. The first connection terminal includes a first metal electrode, a first pad part formed on an upper surface of the first metal electrode and formed by a metal plated layer, and a first metal oxide layer formed on an upper surface of the first metal electrode in a surrounding region of the first pad part so as to surround an outer periphery of the first pad part. The electronic component has a first terminal part provided on its lower surface. The first terminal part of the electronic component is connected to the first pad part of the first connection terminal via a metal joining material.

Abstract: An electronic component device includes a first lead frame having a first connection terminal and an electronic component. The first connection terminal includes a first metal electrode, a first pad part formed on an upper surface of the first metal electrode and formed by a metal plated layer, and a first metal oxide layer formed on an upper surface of the first metal electrode in a surrounding region of the first pad part so as to surround an outer periphery of the first pad part. The electronic component has a first terminal part provided on its lower surface. The first terminal part of the electronic component is connected to the first pad part of the first connection terminal via a metal joining material.

Abstract: A fingerprint recognition semiconductor device includes an insulation layer, a wiring pattern formed on a lower surface of the insulation layer, and a sensor element flip-chip-connected to the wiring pattern. The sensor element includes an active surface, including a sensor portion that recognizes a fingerprint, and a rear surface, located at a side opposite to the active surface. An encapsulation resin fills a gap between the lower surface of the insulation layer and an upper surface of a wiring substrate, facing the rear surface of the sensor element and connected to the wiring pattern by a connecting member. The entire active surface of the sensor element is covered by underfill formed between the active surface of the sensor element and the lower surface of the insulation layer. The insulation layer includes an upper surface, defining an uppermost surface and free from a wiring layer.

Abstract: A semiconductor device includes a wiring layer formed on a first surface of a first insulation layer and including an external connection pad and an internal connection pad located at an inner side of the external connection pad. A semiconductor element facing the first surface of the first insulation layer includes an electrode pad located corresponding to the internal connection pad, a bump formed on the electrode pad and connected to the internal connection pad, and a circuit element region defined in a first surface of the semiconductor element at an inner side of the electrode pad. A second insulation layer fills a gap between the first surfaces of the semiconductor element and the first insulation layer. A third insulation layer covers a second surface of the semiconductor element and the second insulation layer and includes an opening that exposes the external connection pad connected to an external connection terminal.

Abstract: A fingerprint recognition semiconductor device includes an insulation layer, a wiring pattern formed on a lower surface of the insulation layer, and a sensor element flip-chip-connected to the wiring pattern. The sensor element includes an active surface, including a sensor portion that recognizes a fingerprint, and a rear surface, located at a side opposite to the active surface. An encapsulation resin fills a gap between the lower surface of the insulation layer and an upper surface of a wiring substrate, facing the rear surface of the sensor element and connected to the wiring pattern by a connecting member. The entire active surface of the sensor element is covered by underfill formed between the active surface of the sensor element and the lower surface of the insulation layer. The insulation layer includes an upper surface, defining an uppermost surface and free from a wiring layer.

Abstract: A semiconductor device includes a wiring layer formed on a first surface of a first insulation layer and including an external connection pad and an internal connection pad located at an inner side of the external connection pad. A semiconductor element facing the first surface of the first insulation layer includes an electrode pad located corresponding to the internal connection pad, a bump formed on the electrode pad and connected to the internal connection pad, and a circuit element region defined in a first surface of the semiconductor element at an inner side of the electrode pad. A second insulation layer fills a gap between the first surfaces of the semiconductor element and the first insulation layer. A third insulation layer covers a second surface of the semiconductor element and the second insulation layer and includes an opening that exposes the external connection pad connected to an external connection terminal.

Abstract: According to an aspect of the present invention, there is provided a semiconductor device manufacturing method, including: preparing a support plate having a mounting portion on which a mounting terminal is mountable; preparing a circuit board having a mounting surface on which a semiconductor chip is mounted and a connection pad is formed; bringing the support plate to face the mounting surface of the circuit board, and connecting the support plate to the connection pad through the mounting terminal; forming a resin layer between the support plate and the mounting surface of the circuit board to cover the mounting terminal; and removing the support plate, thereby faulting a via in the resin layer along a shape of the mounting portion so as to expose the mounting terminal therethrough.