Patents by Inventor Yukinori Nakakura

Yukinori Nakakura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Mosfet semiconductor device and manufacturing method thereof
    Patent number: 4780428
    Abstract: A method of forming a gate insulating film on a MOSFET. After a SiO.sub.2 film is formed by thermal oxidation as a gate insulating film on a MOSFET, the SiO.sub.2 film is removed by selective etching from the surface area other than MOSFET region, and an oxygen doped semi-insulating polycrystalline silicon film is deposited thereon. Then, a silicon nitride layer is deposited and a SiO.sub.2 film is formed by CVD method on the surface area other than the MOSFET region.
    Type: Grant
    Filed: June 10, 1987
    Date of Patent: October 25, 1988
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yukinori Nakakura, Nobuyuki Kato
  • MOSFET semiconductor device and manufacturing method thereof
    Patent number: 4695479
    Abstract: A method of forming a gate insulating film on a MOSFET. After a SiO.sub.2 film is formed by thermal oxidation as a gate insulating film on a MOSFET, the SiO.sub.2 film is removed by selective etching from the surface area other than the MOSFET region, and an oxygen doped semi-insulating polycrystalline silicon film is depostied thereon. Then, a silicon nitride layer is deposited and a SiO.sub.2 film is formed by CVD method on the surface area other than the MOSFET region.
    Type: Grant
    Filed: March 12, 1986
    Date of Patent: September 22, 1987
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yukinori Nakakura, Nobuyuki Kato