Patents by Inventor Yukinori Nakata

Yukinori Nakata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having active element connected to an electrode metal pad via a barrier metal layer and interlayer insulating film
    Patent number: 6864562
    Abstract: A semiconductor device of the present invention has (1) an active element provided on a semiconductor substrate, (2) an interlayer insulating film formed so as to cover the active element, (3) a pad metal for an electrode pad which is provided on the interlayer insulating film, (4) a barrier metal layer which is provided on the active element with the interlayer insulating film therebetween, so that the pad metal is formed on the barrier metal layer, and (5) an insulating layer having high adherence to the barrier metal layer, the insulating layer being provided between the interlayer insulating film and the barrier metal layer. With this arrangement, the adherence between the barrier metal layer, the insulating film and the interlayer insulating film is surely improved, and even in the case where an external force is applied to the electrode pad upon bonding or after bonding, the barrier metal layer hardly comes off the part thereunder.
    Type: Grant
    Filed: June 21, 2000
    Date of Patent: March 8, 2005
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Kenji Toyosawa, Atsushi Ono, Yasunori Chikawa, Nobuhisa Sakaguchi, Nakae Nakamura, Yukinori Nakata
  • Semiconductor device having active element connected to an electrode metal pad via a barrier metal layer and interlayer insulating film
    Patent number: 6650002
    Abstract: A semiconductor device of the present invention has (1) an active element provided on a semiconductor substrate, (2) an interlayer insulating film formed so as to cover the active element, (3) a pad metal for an electrode pad which is provided on the interlayer insulating film, (4) a barrier metal layer which is provided on the active element with the interlayer insulating film therebetween, so that the pad metal is i formed on the barrier metal layer, and (5) an insulating layer having high adherence to the barrier metal layer, the insulating layer being provided between the interlayer insulating film and the barrier metal layer. With this arrangement, the adherence between the barrier metal layer, the insulating film and the interlayer insulating film is surely improved, even in the case where an external force is applied to the electrode pad upon bonding or after bonding, the barrier metal layer hardly comes off the part thereunder.
    Type: Grant
    Filed: June 21, 2000
    Date of Patent: November 18, 2003
    Assignee: Sharp Kabushiki Kaishi
    Inventors: Kenji Toyosawa, Atsushi Ono, Yasunori Chikawa, Nobuhisa Sakaguchi, Nakae Nakamura, Yukinori Nakata
  • Semiconductor device having active element connected to an electrode metal pad via a barrier metal layer and interlayer insulating film
    Patent number: 6441467
    Abstract: A semiconductor device of the present invention has (1) an active element provided on a semiconductor substrate, (2) an interlayer insulating film formed so as to cover the active element, (3) a pad metal for an electrode pad which is provided on the interlayer insulating film, (4) a barrier metal layer which is provided on the active element with the interlayer insulating film therebetween, so that the pad metal is formed on the barrier metal layer, and (5) an insulating layer having high adherence to the barrier metal layer, the insulating layer being provided between the interlayer insulating film and the barrier metal layer. With this arrangement, the adherence between the barrier metal layer, the insulating film and the interlayer insulating film is surely improved, and even in the case where an external force is applied to the electrode pad upon bonding or after bonding, the barrier metal layer hardly comes off the part thereunder.
    Type: Grant
    Filed: April 22, 1998
    Date of Patent: August 27, 2002
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Kenji Toyosawa, Atsushi Ono, Yasunori Chikawa, Nobuhisa Sakaguchi, Nakae Nakamura, Yukinori Nakata
  • A SEMICONDUCTOR DEVICE HAVING ACTIVE ELEMENT CONNECTED TO AN ELECTRODE METAL PAD VIA A BARRIER METAL LAYER AND INTERLAYER INSULATING FILM
    Publication number: 20020000659
    Abstract: A semiconductor device of the present invention has (1) an active element provided on a semiconductor substrate, (2) an interlayer insulating film formed so as to cover the active element, (3) a pad metal for an electrode pad which is provided on the interlayer insulating film, (4) a barrier metal layer which is provided on the active element with the interlayer insulating film therebetween, so that the pad metal is formed on the barrier metal layer, and (5) an insulating layer having high adherence to the barrier metal layer, the insulating layer being provided between the interlayer insulating film and the barrier metal layer. With this arrangement, the adherence between the barrier metal layer, the insulating film and the interlayer insulating film is surely improved, and even in the case where an external force is applied to the electrode pad upon bonding or after bonding, the barrier metal layer hardly comes off the part thereunder.
    Type: Application
    Filed: April 22, 1998
    Publication date: January 3, 2002
    Inventors: KENJI TOYOSAWA, ATSUSHI ONO, YASUNORI CHIKAWA, NOBUHISA SAKAGUCHI, NAKAE NAKAMURA, YUKINORI NAKATA