Abstract: A mobile robot control system according to an embodiment is a mobile robot control system configured to control a mobile robot, a shape of the mobile robot having long sides and short sides in a top view, and the mobile robot control system including: an area setting unit configured to set a virtual bumper area defined by a first area and a second area, the first area being defined by a plurality of circles arranged along the long-side direction and the second area being formed by moving the first area in accordance with a moving speed of the mobile robot; and a control unit configured to control the mobile robot so as to decelerate or stop when the nearby object enters the virtual bumper area. Control may be performed using a machine learning model generated by supervised learning or the like.

Abstract: An object of the present invention is to provide a new electroless plating film which can prevent the diffusion of molten solder to a metal material constituting a conductor. The present invention is an electroless Co—W plating film, wherein content of W is in an amount of 35 to 58 mass % and a thickness of the film is 0.05 ?m or more.

Abstract: An object of the present invention is to provide a new electroless plating film which can prevent the diffusion of molten solder to a metal material constituting a conductor. The present invention is an electroless Co—W plating film, wherein content of W is in an amount of 35 to 58 mass % and a thickness of the film is 0.05 ?m or more.

Abstract: An electroless copper plating bath is an electroless copper plating bath with a pH of 5 to 10 containing a hydrazine compound as a reducing agent and not containing formaldehyde. The electroless copper plating bath comprises at least: an amine-based complexing agent or an amine compound; and an aminocarboxylic acid-based complexing agent.

Abstract: The present invention provides a bump that can prevent diffusion of a metal used as a base conductive layer of the bump into a surface of an Au layer or an Ag layer. A conductive bump of the present invention is a conductive bump formed on a substrate. The conductive bump comprises, at least in order from the substrate: a base conductive layer; a Pd layer; a Pt layer; and an Au layer or an Ag layer having directly contact with the Pd layer, wherein a diameter of the conductive bump is 20 ?m or less.

Abstract: An object of the present invention is to provide an electroless plating bath having excellent property in plating film deposition without containing halides such as chloride in the electroless plating bath. A halogen-free electroless plating bath of the present invention comprising: a water soluble platinum compound or a water soluble palladium compound, and a reducing agent wherein the water soluble platinum compound is a tetraammine platinum (II) complex salt excluding a halide of the tetraammine platinum (II) complex salt, the water soluble palladium compound is a tetraammine palladium (II) complex salt excluding a halide of the tetraammine palladium (II) complex salt and tetraammine palladium (II) sulfate, the reducing agent is formic acid or its salts, and the electroless plating bath contains no halide as an additive.

Abstract: A semiconductor device includes: a semiconductor element; a support as a metallic member that includes a metallized layer having a first component as an iron group element and a second component as a periodic table group five or group six transition metal element other than chromium provided at an outermost surface of the support, and is arranged such that the outermost surface faces the semiconductor element; a joint material that is arranged between the outermost surface of the support and the semiconductor element, and is joined with the outermost surface to fix the semiconductor element to the support; and a molding resin that is arranged to cover a joint body having the support, the joint material and the semiconductor element.

Abstract: The purpose of the present invention is to provide a heat-resistant power module substrate, a heat-resistant plating film, and plating solution capable of preventing occurrence of crack in a plating film, even if TCT with high temperature side set to 200° C. or higher is performed. A heat-resistant power module substrate for mounting a power semiconductor generating high heat until maximum 300° C., at least comprising: a base material composed of aluminum oxide, aluminum nitride or silicon nitride; a circuit composed of copper or aluminum and formed on the base material directly or via brazing material; and a plating film formed on a surface of the circuit, wherein the plating film is an electroless nickel-phosphorus-molybdenum plating film, and phosphorus content in the plating film is 10.5% to 13% by weight.

Abstract: An object of the present invention is to provide an electroless plating bath having excellent property in plating film deposition without containing halides such as chloride in the electroless plating bath.

Abstract: The present invention provides a bump that can prevent diffusion of a metal used as a base conductive layer of the bump into a surface of an Au layer or an Ag layer. A conductive bump of the present invention is a conductive bump formed on a substrate. The conductive bump comprises, at least in order from the substrate: a base conductive layer; a Pd layer; a Pt layer; and an Au layer or an Ag layer having directly contact with the Pd layer, wherein a diameter of the conductive bump is 20 ?m or less.

Abstract: A semiconductor device includes: a semiconductor element; a support as a metallic member that includes a metallized layer having a first component as an iron group element and a second component as a periodic table group five or group six transition metal element other than chromium provided at an outermost surface of the support, and is arranged such that the outermost surface faces the semiconductor element; a joint material that is arranged between the outermost surface of the support and the semiconductor element, and is joined with the outermost surface to fix the semiconductor element to the support; and a molding resin that is arranged to cover a joint body having the support, the joint material and the semiconductor element.

Abstract: The purpose of the present invention is to provide a heat-resistant power module substrate, a heat-resistant plating film, and plating solution capable of preventing occurrence of crack in a plating film, even if TCT with high temperature side set to 200? or higher is performed. A heat-resistant power module substrate for mounting a power semiconductor generating high heat until maximum 300?, at least comprising: a base material composed of aluminum oxide, aluminum nitride or silicon nitride; a circuit composed of copper or aluminum and formed on the base material directly or via brazing material; and a plating film formed on a surface of the circuit, wherein the plating film is an electroless nickel-phosphorus-molybdenum plating film, and phosphorus content in the plating film is 10.5% to 13% by weight.

Abstract: Part or whole of an electroless gold plating film of a plated film laminate including an electroless nickel plating film, an electroless palladium plating film and an electroless gold plating film is formed by an electroless gold plating using an electroless gold plating bath including a water-soluble gold compound, a complexing agent, formaldehyde and/or a formaldehyde-bisulfite adduct, and an amine compound represented by the following general formula R1—NH—C2H4—NH—R2 or R3—(CH2—NH—C2H4—NH—CH2)n—R4. The method of the invention does not need two types of baths, a flash gold plating bath and a thick gold plating bath for thickening. Gold plating films of different thicknesses suited for solder bonding or wire bonding can be formed using only one type of gold plating bath.

Abstract: An electroless gold plating bath includes a water-soluble gold compound, a complexing agent, a formaldehyde metabisulfite adduct, and an amine compound represented by R1—NH—C2H4—NH—R2 or (CH2—NH—C2H4—NH—CH2)n—R4 (wherein R1 to R4 represent —OH, —CH3, —CH2OH, —C2H4OH, —CH2N(CH3)2, —CH2NH(CH2OH), —CH2NH(C2H4OH), —C2H4NH(CH2OH), —C2H4NH(C2H4OH), —CH2N(CH2OH)2, —CH2N(C2H4OH)2, —C2H4N(CH2OH)2 or —C2H4N(C2H4OH)2, and n is an integer of 1 to 4). A gold plated coating of a good appearance can be formed without causing a failure in appearance owing to the progress of intergranular corrosion in a nickel surface.

Abstract: Disclosed is an electroless palladium plating bath containing a palladium compound, at least one complexing agent selected from ammonia and amine compounds, at least one reducing agent selected from phosphinic acid and phosphinates, and at least one unsaturated carboxylic acid compound selected from unsaturated carboxylic acids, unsaturated carboxylic acid anhydrides, unsaturated carboxylates and unsaturated carboxylic acid derivatives. Such an electroless palladium plating bath has high bath stability, and decomposition of the bath hardly occurs. Consequently, the electroless palladium plating bath of the present invention has a longer bath life than conventional electroless palladium plating baths. In addition, this electroless palladium plating bath enables to obtain excellent solder bonding characteristics and wire bonding characteristics since it does not affect plating film characteristics even when it is used for a long time.

Abstract: Disclosed is an electroless palladium plating bath containing a palladium compound, at least one complexing agent selected from ammonia and amine compounds, at least one reducing agent selected from phosphinic acid and phosphinates, and at least one unsaturated carboxylic acid compound selected from unsaturated carboxylic acids, unsaturated carboxylic acid anhydrides, unsaturated carboxylates and unsaturated carboxylic acid derivatives. Such an electroless palladium plating bath has high bath stability, and decomposition of the bath hardly occurs. Consequently, the electroless palladium plating bath of the present invention has a longer bath life than conventional electroless palladium plating baths. In addition, this electroless palladium plating bath enables to obtain excellent solder bonding characteristics and wire bonding characteristics since it does not affect plating film characteristics even when it is used for a long time.

Abstract: Part or whole of an electroless gold plating film of a plated film laminate including an electroless nickel plating film, an electroless palladium plating film and an electroless gold plating film is formed by an electroless gold plating using an electroless gold plating bath including a water-soluble gold compound, a completing agent, formaldehyde and/or a formaldehyde-bisulfite adduct, and an amine compound represented by the following general formula R1—NH—C2H4—NH—R2 or R3—(CH2—NH—C2H4—NH—CH2)n—R4. The method of the invention does not need two types of baths, a flash gold plating bath and a thick gold plating bath for thickening. Gold plating films of different thicknesses suited for solder bonding or wire bonding can be formed using only one type of gold plating bath. Especially, an electroless gold plating film having a thickness of not smaller than 0.

Abstract: An electroless gold plating bath includes a water-soluble gold compound, a complexing agent, a formaldehyde metabisulfite adduct, and an amine compound represented by R1—NH—C2H4—NH—R2 or (CH2—NH—C2H4—NH—CH2)n—R4 (wherein R1 to R4 represent —OH, —CH3, —CH2OH, —C2H4OH, —CH2N(CH3)2, —CH2NH(CH2OH), —CH2NH(C2H4OH), —C2H4NH(CH2OH), —C2H4NH(C2H4OH), —CH2N(CH2OH)2, —CH2N(C2H4OH)2, —C2H4N(CH2OH)2 or —C2H4N(C2H4OH)2, and n is an integer of 1 to 4). A gold plated coating of a good appearance can be formed without causing a failure in appearance owing to the progress of intergranular corrosion in a nickel surface.