Abstract: The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.

Abstract: A semiconductor device which has favorable electrical characteristics, a method for manufacturing a semiconductor device with high productivity, and a method for manufacturing a semiconductor device with a high yield are provided.

Abstract: The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.

Abstract: A semiconductor device with favorable electric characteristics is provided. The semiconductor device includes a first insulating layer, a second insulating layer, an oxide semiconductor layer, and first to third conductive layers. The oxide semiconductor layer includes a region in contact with the first insulating layer, the first conductive layer is connected to the oxide semiconductor layer, and the second conductive layer is connected to the oxide semiconductor layer. The second insulating layer includes a region in contact with the oxide semiconductor layer, and the third conductive layer includes a region in contact with the second insulating layer. The oxide semiconductor layer includes first to third regions. The first region and the second region are separated from each other, and the third region is located between the first region and the second region. The third region and the third conductive layer overlap with each other with the second insulating layer located therebetween.

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a first insulating layer, a second insulating layer, a third insulating layer, a fourth insulating layer, a semiconductor layer, and a first conductive layer. The second insulating layer is positioned over the first insulating layer and the island-shaped semiconductor layer is positioned over the second insulating layer. The second insulating layer has an island shape having an end portion outside a region overlapping with the semiconductor layer. The fourth insulating layer covers the second insulating layer, the semiconductor layer, the third insulating layer, and the first conductive layer, is in contact with part of a top surface of the semiconductor layer, and is in contact with the first insulating layer outside the end portion of the second insulating layer.

Abstract: A semiconductor device with favorable electrical characteristics is to be provided. A highly reliable semiconductor device is to be provided. A semiconductor device with lower power consumption is to be provided. The semiconductor device includes a gate electrode, a first insulating layer over the gate electrode, a metal oxide layer over the first insulating layer, a pair of electrodes over the metal oxide layer, and a second insulating layer over the pair of electrodes. The first insulating layer includes a first region and a second region. The first region has a region being in contact with the metal oxide layer and containing more oxygen than the second region. The second region has a region containing more nitrogen than the first region. The metal oxide layer has at least a concentration gradient of oxygen in a thickness direction, and the concentration gradient becomes high on a first region side and on a second region side.

Abstract: Compositions for low heat cements developed especially for massive concrete works and which exhibit a compressive strength/heat of hydration ratio of at least 7.0 at the age of 13 weeks. One of two inventions provides a powder prepared by mixing CaO, SiO.sub.2, and Al.sub.2 O.sub.3 materials, melting the mixture, quenching the melt, and grinding the quenched matter, the powder being composed mainly of amorphous substances and chemically having a CaO/SiO.sub.2 (molar ratio) of 0.8-1.5 and an Al.sub.2 O.sub.3 content of no more than 10 wt. %. The other invention provides a mixed powder comprising no less than 70 wt. % of a powder and no more than 30 wt. % of an addition (portland cement or the like), the powder being the same as that of the first invention in both predominance of amorphous substances and CaO/SiO.sub.2 (molar ratio) excepting the Al.sub.2 O.sub.3 content which is less than 12 wt. % in the second invention.

Abstract: A hydraulic composition comprising (a) a cement composition prepared by subjecting size-adjusted cement having its particle size distribution adjusted to have a 50% pass particle diameter of from 2 to 7 .mu.m and a ratio of a 90% pass particle diameter to a 10% pass particle diameter of from 25 to 40 to a water-spraying treatment to increase the loss on ignition thereof by 0.5 to 2.0% by weight and (b) a water reducing agent; and a process for producing a concrete pile by using a mixture of the hydraulic composition and from 18 to 25% by weight of water based on the hydraulic composition. A mortar or concrete mixture of the hydraulic composition exhibits sufficient fluidity and provides a hardened product having a greatly improved compressive strength. The concrete pile produced by using the hydraulic composition has a compressive strength of 800 kgf/cm.sup.2 or higher at one day age.

Abstract: A demolition agent for brittle materials which is prepared by pulverizing a quick lime clinker including 0.5 to 10.0% by weight of phosphorus components in terms of P.sub.2 O.sub.5.