Abstract: A TFT array substrate including: an insulating substrate, a gate electrode, a gate electrode line, an insulating film, a semiconductor layer, a contact layer, a source electrode, a drain electrode, a source electrode line, an interlayer insulating film, a pixel electrode, and a connecting line which is made of a same material that of the pixel electrode and connects electrically between the gate electrode line and the source electrode line through a second contact hole provided in the insulating film and a third contact hole provided in the interlayer insulating film.

Abstract: A TFT array substrate including: an insulating substrate, a gate electrode, a gate electrode line, an insulating film, a semiconductor layer, a contact layer, a source electrode, a drain electrode, a source electrode line, an interlayer insulating film, a pixel electrode, and a connecting line which is made of a same material that of the pixel electrode and connects electrically between the gate electrode line and the source electrode line through a second contact hole provided in the insulating film and a third contact hole provided in the interlayer insulating film.

Abstract: A TFT array substrate including: an insulating substrate, a gate electrode, a gate electrode line, an insulating film, a semiconductor layer, a contact layer, a source electrode, a drain electrode, a source electrode line, an interlayer insulating film, a pixel electrode, and a connecting line which is made of a same material that of the pixel electrode and connects electrically between the gate electrode line and the source electrode line through a second contact hole provided in the insulating film and a third contact hole provided in the interlayer insulating film.

Abstract: A method for forming a contact hole in an active matrix substrate, the method comprising steps of: (a) depositing an insulating film covering a first electrode provided on a substrate and the substrate; (b) forming a contact hole by patterning said insulating film by means of dry etching; and (c) forming a second electrode, and contacting the second electrode with the first electrode; wherein in the step (b) after forming a contact hole by dry etching, a surface treatment by plasma etching or reactive ion etching with oxygen gas under a condition in which a pressure P is in a range of 100 Pa to 400 Pa is performed.

Abstract: A method of providing a contact hole including (a) depositing a first conductive film on a substrate and patterning the first conductive film to form a first electrode line, (b) depositing an insulating film on the first electrode line and the substrate, (c) forming a contact hole in the insulating film over a top surface of the first electrode line, and (d) depositing a second conductive film on the insulating film and the contact hole and patterning the second conductive film to form a second electrode line, wherein a surface of the first conductive film is subjected to an oxidizing operation in step (a) so that a contact resistance of the contact hole is lowered.

Abstract: A print head is provided with armatures, each having a stylus section and a plunger in an opposite position, the armatures each having the middle section that serves as a fulcrum for rotation. A plurality of first flat springs act on the armatures to that the armatures are biased in direction bias the armatures in a direction returning the armatures against the bias forces by the first flat springs.