Abstract: Provided are a method of producing a photoresist comprising a process of filtrating a raw resist solution containing resist constituent components and a resist solvent dissolving them, using a filter made of at least one resin selected from fluorine-based resins and polyolefins, wherein this filter has been used for filtration of the same or different kind of other raw resist solution and has been washed with a solvent containing the resist solvent toward the reverse direction to the filtration direction, and a method of sequentially producing two or more photoresists using the same production apparatus, wherein this production apparatus is washed with the resist solvent, a solvent other than this resist solvent capable of dissolving or decomposing the resist constituent components, and the resist solvent, in this order, after production of the photoresist and before production of the subsequent photoresist.

Abstract: The present invention provides a method for evaluating a solution for a coating film for semiconductor, which comprises measuring Clogging Degree of a solution for a coating film for semiconductor when the solution is filtrated through a filter having an average pore size of 0.01 to 0.4 ?m, and estimating quality of the coating film formed from the solution, wherein the Clogging Degree is defined by the following formula: Clogging Degree=V2/V1 V1: A value of linear velocity of filtrate (filtrating rate per 1 cm2 of filter (g/(cm2·min)) at initial standard point in the case that a solution is filtrated at a fixed pressure and temperature V2: A value of linear velocity of filtrate at the point the predetermined weight of filtrate discharged from the initial standard point According to the present method, quality of coating films can be figured out without actual formation of the coating films, and solutions for coating films can be evaluated thereby.

Abstract: The present invention provides a chemically amplified resist composition comprising a treated resin (1), an acid generator and a solvent, wherein resin (1) is (a) a (meth)acrylic resin which is insoluble or poorly soluble in an alkali aqueous solution and becomes soluble in an alkali aqueous solution by the action of an acid, and which comprises a repeating unit having an alicyclic hydrocarbon group in its side chain or (b) a styrenic resin which is insoluble or poorly soluble in an alkali aqueous solution and becomes soluble in an alkali aqueous solution by the action of an acid, and which comprises a repeating unit derived from hydroxystyrene, and wherein the treated resin (1) is obtained by (A) contacting crude resin (1) with activated carbon at 40 to 90° C.

Abstract: The present invention provides a method for evaluating a solution for a coating film for semiconductor, which comprises measuring Clogging Degree of a solution for a coating film for semiconductor when the solution is filtrated through a filter having an average pore size of 0.01 to 0.4 ?m, and estimating quality of the coating film formed from the solution, wherein the Clogging Degree is defined by the following formula: Clogging Degree=V2/V1 V1: A value of linear velocity of filtrate (filtrating rate per 1 cm2 of filter (g/(cm2·min)) at initial standard point in the case that a solution is filtrated at a fixed pressure and temperature V2: A value of linear velocity of filtrate at the point the predetermined weight of filtrate discharged from the initial standard point According to the present method, quality of coating films can be figured out without actual formation of the coating films, and solutions for coating films can be evaluated thereby.

Abstract: A chemical amplification resist composition comprising a treated resin (1) obtained by contacting crude resin (1) with activated carbon, an acid generator and a solvent,

Abstract: Provided are a method of producing a photoresist comprising a process of filtrating a raw resist solution containing resist constituent components and a resist solvent dissolving them, using a filter made of at least one resin selected from fluorine-based resins and polyolefins, wherein this filter has been used for filtration of the same or different kind of other raw resist solution and has been washed with a solvent containing the resist solvent toward the reverse direction to the filtration direction, and a method of sequentially producing two or more photoresists using the same production apparatus, wherein this production apparatus is washed with the resist solvent, a solvent other than this resist solvent capable of dissolving or decomposing the resist constituent components, and the resist solvent, in this order, after production of the photoresist and before production of the subsequent photoresist.

Abstract: This invention provides a process for producing a resist composition in which the content of relatively large undissolved particles is low just after production of the composition and the content of relatively large undissolved particles increases only to a small extent even if the composition is stored for a long period of time. Thus, this invention provides a process for producing a resist composition which comprises filtering a mixture of an alkali-soluble resin, a radiation-sensitive compound and a solvent by the use of a filter of which pore diameter is 0.1 .mu.m or below and of which particle-removing performance is 99% or above. Further, this invention provides also a resist composition comprising an alkali-soluble resin, a radiation-sensitive compound and an organic solvent not simultaneously having both acetoxy group and alkoxy group in its molecule, said composition containing undissolved particles having a particle diameter of 0.25 .mu.

Abstract: This invention provides a process for producing a resist composition in which the content of relatively large undissolved particles is low just after production of the composition and the content of relatively large undissolved particles increases only to a small extent even if the composition is stored for a long period of time. Thus, this invention provides a process for producing a resist composition which comprises filtering a mixture of an alkali-soluble resin, a radiation-sensitive compound and a solvent by the use of a filter of which pore diameter is 0.1 .mu.m or below and of which particle-removing performance is 99% or above. Further, this invention provides also a resist composition comprising an alkali-soluble resin, a radiation-sensitive compound and an organic solvent not simultaneously having both acetoxy group and alkoxy group in its molecule, said composition containing undissolved particles having a particle diameter of 0.25 .mu.

Abstract: A quinone diazide sulfonic acid ester of a phenol compound of the general formula (I): ##STR1## wherein Y.sub.1, Y.sub.2, Y.sub.3 and Y.sub.4 are the same or different and each a hydrogen atom, an alkyl group, a halogen atom or a hydroxyl group, provided that at least one of Y.sub.1, Y.sub.2, Y.sub.3 and Y.sub.4 is a hydroxyl group; Z.sub.1, Z.sub.2, Z.sub.3, Z.sub.4, Z.sub.5 and Z.sub.6 are the same or different and each a hydrogen atom, an alkyl, an aryl group, a halogen atom or a hydroxyl group, provided that at least one of Z.sub.1, Z.sub.2, Z.sub.3, Z.sub.4, Z.sub.5 and Z.sub.6 is a hydroxyl group; X is ##STR2## in which R.sub.1 and R.sub.2 are the same or different and each a hydrogen atom, an alkyl group, an alkenyl group, a cyclo-alkyl group, an alkoxy group or an aryl group, provided that when at least one of R.sub.1 and R.sub.

Abstract: A process for preparing a positive resist composition, which process includes the steps of condensation reacting a quinone diazide sulfonyl halogenide with a phenol compound, mixing a condensation reaction mixture with a solution of an alkali-soluble resin in a resist solvent and removing impurities from the mixture, whereby the overall processing time can be shortened.

Abstract: A quinone diazide sulfonic acid ester of a phenol compound of the general formula (I): ##STR1## wherein Y.sub.1 and Y.sub.2 are each a hydrogen atom, an alkyl group or a hydroxyl group, provided that at least one of Y.sub.1 and Y.sub.2 is a hydroxyl group; Z.sub.1, Z.sub.2, Z.sub.3, Z.sub.4, Z.sub.5, Z.sub.6 and Z.sub.7 are the same or different and each a hydrogen atom, a hydroxyl group, an alkyl group, a cycloalkyl group, an aryl group or halogen atom, provided that at least two of Z.sub.1, Z.sub.2, Z.sub.3, Z.sub.4, Z.sub.5, Z.sub.6 and Z.sub.7 are hydroxyl groups; R.sub.1, R.sub.2 and R.sub.3 are the same or different and each a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group or an aryl group provides a positive resist composition having a high .gamma.-value.