Abstract: The present disclosure provides a surface-treated aluminum material having excellent adhesiveness to resins, on the surface of which an oxide film is formed, the oxide film comprising a surface-side porous aluminum oxide film having a thickness of 20 to 500 nm and a base-side barrier aluminum oxide film having a thickness of 3 to 30 nm, wherein small pores each having a diameter of 5 to 30 nm are formed on the porous aluminum oxide film, and the length of cracks formed in a boundary between the porous aluminum oxide film and the barrier aluminum oxide film is not more than 50% of the length of the boundary, a method for manufacturing the surface-treated aluminum material, and a surface-treated aluminum material-resin bonded body, comprising the surface-treated aluminum material and a resin that covers the surface of the oxide film formed thereon.

Abstract: The method for producing an electrolytic aluminum foil of the present disclosure is a method for producing an electrolytic aluminum foil, the method including supplying an electrolytic solution in an electrolytic cell provided with a diaphragm between an anode and a cathode and depositing an aluminum foil on a surface of the cathode by electrolysis, wherein the diaphragm is made of aluminum having a purity of 85.0% or more and has a plurality of pores having an average pore diameter of 100 to 1000 ?m.

Abstract: A method for producing aluminum includes: a dissolution step of dissolving a hydrate containing Al in water to prepare an aqueous solution that contains Al ions; an extraction step of bringing an organic phase that is composed of an extractant into contact with an aqueous phase that is composed of the aqueous solution to extract the Al ions in the aqueous phase into the organic phase; and an electrodeposition step of electrolyzing the organic phase as an electrolytic solution to electrodeposit metallic Al onto a surface of a cathode from the Al ions in the electrolytic solution.

Abstract: A method for producing an aluminum material, including: providing an electrolytic cell in which an anode electrode containing 0.01 to 30% by mass Si and Al and a cathode electrode are immersed in an electrolytic solution and depositing aluminum on the cathode electrode by energizing the anode electrode and the cathode electrode in the electrolytic solution.

Abstract: The present disclosure provides a high-quality electrolytic aluminum foil which includes a smooth surface and an end portion containing no dendritic deposit, and a method for producing the same which can obtain the electrolytic aluminum foil at a high collection rate. An electrolytic aluminum foil of the present disclosure includes a surface having an arithmetic average height (Sa) of 0.15 ?m or less, wherein when, for a size of a crystal grain present in a cross-sectional surface, a first maximum dimension as measured in a thickness direction of the cross-sectional surface is x (?m), and a second maximum dimension as measured in a width direction of the cross-sectional surface is y (?m), x and y satisfy (x+y)/2?3 ?m and 1?x/y?4.

Abstract: A method for producing high quality electrolytic aluminum foil excellent in peelability from a cathode surface is provided. A method for producing electrolytic aluminum foil according to the present disclosure is a method for producing electrolytic aluminum foil, comprising steps of depositing an aluminum film on a surface of a cathode in an electrolytic cell supplied with an electrolytic solution and comprising the cathode; and peeling the deposited aluminum film from the surface of the cathode to provide aluminum foil, wherein the cathode has surface roughness of an arithmetic average roughness (Ra) of 0.10 to 0.40 ?m and a ten-point average roughness (Rz) of 0.20 to 0.70 ?m.

Abstract: A method for producing aluminum includes: a dissolution step of dissolving a hydrate containing Al in water to prepare an aqueous solution that contains Al ions; an extraction step of bringing an organic phase that is composed of an extractant into contact with an aqueous phase that is composed of the aqueous solution to extract the Al ions in the aqueous phase into the organic phase; and an electrodeposition step of electrolyzing the organic phase as an electrolytic solution to electrodeposit metallic Al onto a surface of a cathode from the Al ions in the electrolytic solution.

Abstract: The method for producing an electrolytic aluminum foil of the present disclosure is a method for producing an electrolytic aluminum foil, the method including supplying an electrolytic solution in an electrolytic cell provided with a diaphragm between an anode and a cathode and depositing an aluminum foil on a surface of the cathode by electrolysis, wherein the diaphragm is made of aluminum having a purity of 85.0% or more and has a plurality of pores having an average pore diameter of 100 to 1000 ?m.

Abstract: The present disclosure provides a high-quality electrolytic aluminum foil which includes a smooth surface and an end portion containing no dendritic deposit, and a method for producing the same which can obtain the electrolytic aluminum foil at a high collection rate. An electrolytic aluminum foil of the present disclosure includes a surface having an arithmetic average height (Sa) of 0.15 ?m or less, wherein when, for a size of a crystal grain present in a cross-sectional surface, a first maximum dimension as measured in a thickness direction of the cross-sectional surface is x (?m), and a second maximum dimension as measured in a width direction of the cross-sectional surface is y (?m), x and y satisfy (x+y)/2?3 ?m and 1?x/y?4.

Abstract: The present disclosure provides a surface-treated aluminum material having excellent adhesiveness to resins, on the surface of which an oxide film is formed, the oxide film comprising a surface-side porous aluminum oxide film having a thickness of 20 to 500 nm and a base-side barrier aluminum oxide film having a thickness of 3 to 30 nm, wherein small pores each having a diameter of 5 to 30 nm are formed on the porous aluminum oxide film, and the length of cracks formed in a boundary between the porous aluminum oxide film and the barrier aluminum oxide film is not more than 50% of the length of the boundary, a method for manufacturing the surface-treated aluminum material, and a surface-treated aluminum material-resin bonded body, comprising the surface-treated aluminum material and a resin that covers the surface of the oxide film formed thereon.

Abstract: A method for producing high quality electrolytic aluminum foil excellent in peelability from a cathode surface is provided. A method for producing electrolytic aluminum foil according to the present disclosure is a method for producing electrolytic aluminum foil, comprising steps of depositing an aluminum film on a surface of a cathode in an electrolytic cell supplied with an electrolytic solution and comprising the cathode; and peeling the deposited aluminum film from the surface of the cathode to provide aluminum foil, wherein the cathode has surface roughness of an arithmetic average roughness (Ra) of 0.10 to 0.40 ?m and a ten-point average roughness (Rz) of 0.20 to 0.70 ?m.

Abstract: A method for fabricating a buried semiconductor laser device including the steps of: forming a mesa structure including a bottom cladding layer, an active layer and a top cladding layer overlying an n-type semiconductor substrate; and forming a current confinement structure by growing a p-type current blocking layer and an n-type current blocking layer on each side surface of the mesa structure and on a skirt portion extending from the each side surface, the p-type current blocking layer being fabricated by using a raw material gas containing a group III element gas and a group V element gas at a molar ratio between 60 and 350 inclusive. In this method, the semiconductor laser device including the current confinement structure with the specified leakage current path width can be fabricated with the excellent reproducibility.

Abstract: A method for fabricating a buried semiconductor laser device including the steps of: forming a mesa structure including a bottom cladding layer, an active layer and a top cladding layer overlying an n-type semiconductor substrate; and forming a current confinement structure by growing a p-type current blocking layer and an n-type current blocking layer on each side surface of the mesa structure and on a skirt portion extending from the each side surface, the p-type current blocking layer being fabricated by using a raw material gas containing a group III element gas and a group V element gas at a molar ratio between 60 and 350 inclusive. In this method, the semiconductor laser device including the current confinement structure with the specified leakage current path width can be fabricated with the excellent reproducibility.

Abstract: A method for fabricating a buried semiconductor laser device including the steps of: forming a mesa structure including a bottom cladding layer, an active layer and a top cladding layer overlying an n-type semiconductor substrate; and forming a current confinement structure by growing a p-type current blocking layer and an n-type current blocking layer on each side surface of the mesa structure and on a skirt portion extending from the each side surface, the p-type current blocking layer being fabricated by using a raw material gas containing a group III element gas and a group V element gas at a molar ratio between 60 and 350 inclusive. In this method, the semiconductor laser device including the current confinement structure with the specified leakage current path width can be fabricated with the excellent reproducibility.

Abstract: A method for fabricating a buried semiconductor laser device including the steps of: forming a mesa structure including a bottom cladding layer, an active layer and a top cladding layer overlying an n-type semiconductor substrate; and forming a current confinement structure by growing a p-type current blocking layer and an n-type current blocking layer on each side surface of the mesa structure and on a skirt portion extending from the each side surface, the p-type current blocking layer being fabricated by using a raw material gas containing a group III element gas and a group V element gas at a molar ratio between 60 and 350 inclusive. In this method, the semiconductor laser device including the current confinement structure with the specified leakage current path width can be fabricated with the excellent reproducibility.

Abstract: A method for fabricating a buried semiconductor laser device including the steps of: forming a mesa structure including a bottom cladding layer, an active layer and a top cladding layer overlying an n-type semiconductor substrate; and forming a current confinement structure by growing a p-type current blocking layer and an n-type current blocking layer on each side surface of the mesa structure and on a skirt portion extending from the each side surface, the p-type current blocking layer being fabricated by using a raw material gas containing a group III element gas and a group V element gas at a molar ratio between 60 and 350 inclusive. In this method, the semiconductor laser device including the current confinement structure with the specified leakage current path width can be fabricated with the excellent reproducibility.

Abstract: A method for fabricating a buried semiconductor laser device including the steps of: forming a mesa structure including a bottom cladding layer, an active layer and a top cladding layer overlying an n-type semiconductor substrate; and forming a current confinement structure by growing a p-type current blocking layer and an n-type current blocking layer on each side surface of the mesa structure and on a skirt portion extending from the each side surface, the p-type current blocking layer being fabricated by using a raw material gas containing a group III element gas and a group V element gas at a molar ratio between 60 and 350 inclusive. In this method, the semiconductor laser device including the current confinement structure with the specified leakage current path width can be fabricated with the excellent reproducibility.