Abstract: A semiconductor laser according to one embodiment of the present disclosure includes: a first semiconductor layer; an active layer; and a second semiconductor layer stacked on the first semiconductor layer with the active layer interposed therebetween, and having a strip-shaped ridge, and a high-resistance region at a foot of the ridge. The semiconductor laser further includes an insulating layer formed so as to be in contact with both side surfaces of the ridge in a width direction of the ridge and to expose at least a portion of the high-resistance region, and an electrode layer in contact with an upper surface of the ridge, and in contact with all or a part of an exposed portion of the high-resistance region which is not covered with the insulating layer.

Abstract: [Object] To provide a semiconductor laser element capable of preventing current leakage in junction-down mounting and a method of producing the semiconductor laser element. [Solving Means] A semiconductor laser element according to the present technology includes: a stacked body. The stacked body includes a substrate, an n-type semiconductor layer that is formed on the substrate, is formed of an n-type semiconductor material, and has a core that is a defect concentration region, an active layer that is formed on the n-type semiconductor layer, and a p-type semiconductor layer that is formed on the active layer and is formed of a p-type semiconductor material, and has a recessed portion formed from a surface of the p-type semiconductor layer to have a depth reaching the core and an ion implantation region that is formed by implanting ions into a region including the core.

Abstract: [Object] To provide a laser element capable of preventing laser characteristics from deteriorating while suppressing electron overflow and improving the yield at the time of production. [Solving Means] A laser element according to the present technology includes: a first semiconductor layer; a second semiconductor layer; an active layer; and an electron barrier layer. The first semiconductor layer is formed of a group iii nitride semiconductor having a first conducive type. The second semiconductor layer is formed of a group iii nitride semiconductor having a second conductive type. The active layer is formed of a group iii nitride semiconductor and is provided between the first semiconductor layer and the second semiconductor layer.