Abstract: A semiconductor device manufacturing method of embodiments includes: forming a silicon oxide film on a surface of a silicon carbide layer; performing a first heat treatment in an atmosphere containing nitrogen gas at a temperature equal to or more than 1200° C. and equal to or less than 1600° C.; and performing a second heat treatment in an atmosphere containing nitrogen oxide gas at a temperature equal to or more than 750° C. and equal to or less than 1050° C.

Abstract: This semiconductor device according to an embodiment includes: a silicon carbide layer; a gate electrode; a silicon oxide layer between the silicon carbide layer and the gate electrode; and a region between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration not less than 1×1021 cm?3. A nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region has its peak in the region, and a state density Z1/2 in a portion is not more than 1×1011 cm?3. The portion is within 100 nm from the silicon oxide layer toward the silicon carbide layer. A nitrogen concentration and a carbon concentration in a position 1 nm from the peak toward the silicon oxide layer is not more than 1×1018 cm?3, and a nitrogen concentration in a position 1 nm from the peak toward the silicon carbide layer is not more than 1×1018 cm?3.

Abstract: Provided is a power conversion device converting power and supplying the converted power to a load, the power conversion device including: a power conversion circuit connected to the load and configured to supply/receive the power; a coil configured to detect a current passing through the power conversion circuit and to output a voltage corresponding to the detected current; an integration circuit configured to integrate the voltage output from the coil to generate a voltage signal corresponding to a variation of the current; and a control device configured to generate a control signal to the power conversion circuit based on the voltage signal output from the integration circuit.

Abstract: An integrated circuit according to one or more embodiments may include a terminal to which an impedance element and a power supply having a predetermined potential can be connected. The integrated circuit may be configured to change a potential of one of electrodes of the impedance element connected to the terminal, detect a change in electrical characteristics of the terminal based on characteristics of the impedance element when the potential of the one electrode of the impedance element is changed, to determine a setting condition among a plurality of setting conditions that are used for an operation of the integrated circuit, store the setting condition in a storage, and use the setting condition stored in the storage for the operation of the integrated circuit.

Abstract: This semiconductor device according to an embodiment includes: a silicon carbide layer; a gate electrode; a silicon oxide layer between the silicon carbide layer and the gate electrode; and a region between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration not less than 1×1021 cm?3. A nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region has its peak in the region, and a state density Z1/2 in a portion is not more than 1×1011 cm?3. The portion is within 100 nm from the silicon oxide layer toward the silicon carbide layer. A nitrogen concentration and a carbon concentration in a position 1 nm from the peak toward the silicon oxide layer is not more than 1×1018 cm?3, and a nitrogen concentration in a position 1 nm from the peak toward the silicon carbide layer is not more than 1×1018 cm?3.

Abstract: A ferrite composition comprises a main component and a subcomponent. The main component includes 32.0 to 46.4 mol % of iron oxide in terms of Fe2O3, 4.4 to 14.0 mol % of copper oxide in terms of CuO, and 8.4 to 56.9 mol % of zinc oxide in terms of ZnO. The subcomponent includes 0.53 to 11.00 parts by weight of a silicon compound in terms of SiO2, 0.1 to 12.8 parts by weight of a tin compound in terms of SnO2, and 0.5 to 7.0 parts by weight of a bismuth compound in terms of Bi2O3, with respect to 100 parts by weight of the main component.

Abstract: The present technology relates to a file processing device, a file processing method, and a program that achieve quick index display. A file control unit generates a proxy file storing a related image related to an image in a high efficiency image file format (HEIF) file, the proxy file being another HEIF file. Furthermore, the file control unit detects an image corresponding to a selected related image selected from related images stored in the proxy file. The present technology can be applied to, for example, a case where index display of thumbnail images is performed.

Abstract: According to one embodiment, a semiconductor device includes a silicon carbide member, first, second, and third electrodes, and a first insulating member. The silicon carbide member includes first, second, and third silicon carbide regions. The first silicon carbide region includes first, second, third, and fourth partial regions. The third partial region is between the first and second partial regions. The fourth partial region is between the third partial region and the first electrode. The second silicon carbide region includes first and second semiconductor regions. The third silicon carbide region includes third and fourth semiconductor regions. The first insulating member includes first, second, and third insulating regions. The second electrode is electrically connected to the first silicon carbide region. The third and fourth partial regions are between the second and first electrodes. The third electrode is electrically connected to the second silicon carbide region.

Abstract: The present technology relates to a file processing device, a file processing method, and a program that enable association of, for example, an image stored in a file with external data outside the file. A file control unit generates a high efficiency image file format (HEIF) file in which a reserved area is secured that is used to store relationship information related to association of an image stored in the HEIF file with specification information specifying external data that is outside the HEIF file and is to be associated with the image. Furthermore, the file control unit writes the relationship information into the HEIF file by using the reserved area. The present technology can be applied to, for example, a case where a HEIF file is generated and an image stored in the HEIF file is associated with external data later, and the like.

Abstract: Provided is a CVT ring member having a nitrided layer on a surface thereof. The CVT ring member includes a chemical composition containing, by mass, C: 0.43 to 0.70%, Si: 2.50% or less, Mn: 1.00% or less, Cr: 1.50 to 4.00%, Mo: 0.50 to 3.00% and V: 1.00% or less while satisfying a relation of Formula 1: 159×C(%)+91×Si(%)+68×Cr(%)+198×Mo (%)+646?1,000, and the balance being Fe and unavoidable impurities. The ring member has a tensile strength of 1,700 MPa or more. The nitrided layer has a surface hardness of HV800 to HV950.

Abstract: Disclosed is an antibody against a secreted form of GPC3 capable of detecting a secreted form of glypican 3 (GPC3) in a test sample. It is possible to determine whether a subject suffers from cancer, in particular hepatoma. Also disclosed is an antibody against GPC as well as a cell disrupting agent and an anti-cancer agent comprising the same, which can disrupt cells, in particular cancer cells.

Abstract: [Problem] The purpose of the present invention is to provide: a pentasil-type zeolite that combines a higher BET specific surface area and a higher acid amount than previously; and a method for manufacturing said pentasil-type zeolite. [Solution] A pentasil-type zeolite characterized in that the BET specific surface area thereof is 450 m2/g or more, and furthermore the acid amount thereof, measured by the ammonia-TPD method, is 0.38 mmol/g or more. This pentasil-type zeolite can be obtained by a manufacturing method which has a crystallization step for crystallizing a mixture containing tetrabutylphosphonium cations, a silica source, an alumina source, an alkali metal source, and water, and which is characterized in that the molar ratio of the alkali metal relative to the silica in the mixture is greater than 0.04 and less than 0.10.

Abstract: Disclosed is an antibody against a secreted form of GPC3 capable of detecting a secreted form of glypican 3 (GPC3) in a test sample. It is possible to determine whether a subject suffers from cancer, in particular hepatoma. Also disclosed is an antibody against GPC as well as a cell disrupting agent and an anti-cancer agent comprising the same, which can disrupt cells, in particular cancer cells.

Abstract: A method for diagnosing cancer comprising detecting ROBO1 protein is disclosed. In addition, a method for treating a disease caused by abnormal cell growth comprising administrating an antibody that binds to ROBO1, as well as a pharmaceutical composition, a cell growth inhibitor and an anticancer agent comprising an antibody that binds to ROBO1 as an active ingredient are disclosed. Further, a method for inducing cell damages in a ROBO1 expressing cell and a method for inhibiting the growth of a ROBO1 expressing cell by bringing a ROBO1 expressing cell into contact with an antibody that binds to ROBO1, are disclosed. Furthermore, a method for monitoring progression of hepatitis by detecting ROBO1 protein is disclosed.

Abstract: An image forming apparatus for forming images to a medium, includes an apparatus housing; a temperature detection unit for detecting a temperature of a surrounding of the apparatus housing; a dehumidifying unit for dehumidifying an interior surrounded by the apparatus housing; and a dehumidifying decision unit for operating the dehumidifying unit based on a change of the detected temperature at the temperature detection unit, to certainly remove dew condensation

Abstract: Provided is a method for diagnosing cancer by detecting a novel cancer marker. Cancer can be diagnosed by detecting soluble glypican 3 in a test sample.

Abstract: Provided is a CVT ring member having a nitrided layer on a surface thereof. The CVT ring member includes a chemical composition containing, by mass, C: 0.43 to 0.70%, Si: 2.50% or less, Mn: 1.00% or less, Cr: 1.50 to 4.00%, Mo: 0.50 to 3.00% and V: 1.00% or less while satisfying a relation of Formula 1: 159×C(%)+91×Si(%)+68×Cr(%)+198×Mo (%)+646?1,000, and the balance being Fe and unavoidable impurities. The ring member has a tensile strength of 1,700 MPa or more. The nitrided layer has a surface hardness of HV800 to HV950.

Abstract: Disclosed are a protein encoded by a gene having a nucleotide sequence represented by any of SEQ ID NOs: 1 to 65 or a fragment thereof, an antibody recognizing the protein or antigen-binding fragment thereof, and a polynucleotide having a sequence comprising at least 12 consecutive nucleotides of a nucleotide sequence represented by any of SEQ ID NOs: 1 to 65 or a nucleotide sequence complementary thereto. The gene and the protein of the invention is useful for diagnosing and treating cancer.

Abstract: [Problem] The purpose of the present invention is to provide: a pentasil-type zeolite that combines a higher BET specific surface area and a higher acid amount than previously; and a method for manufacturing said pentasil-type zeolite. [Solution] A pentasil-type zeolite characterized in that the BET specific surface area thereof is 450 m2/g or more, and furthermore the acid amount thereof, measured by the ammonia-TPD method, is 0.38 mmol/g or more. This pentasil-type zeolite can be obtained by a manufacturing method which has a crystallization step for crystallizing a mixture containing tetrabutylphosphonium cations, a silica source, an alumina source, an alkali metal source, and water, and which is characterized in that the molar ratio of the alkali metal relative to the silica in the mixture is greater than 0.04 and less than 0.10.

Abstract: Disclosed are a protein encoded by a gene having a nucleotide sequence represented by any of SEQ ID NOs: 1 to 65 or a fragment thereof, an antibody recognizing the protein or antigen-binding fragment thereof, and a polynucleotide having a sequence comprising at least 12 consecutive nucleotides of a nucleotide sequence represented by any of SEQ ID NOs: 1 to 65 or a nucleotide sequence complementary thereto. The gene and the protein of the invention is useful for diagnosing and treating cancer.