Patents by Inventor Yukio Kashima
Yukio Kashima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11309454Abstract: A deep ultraviolet LED with a design wavelength ?, including a reflecting electrode layer (Au), a metal layer (Ni), a p-GaN contact layer, a p-block layer made of a p-AlGaN layer, an i-guide layer made of an AlN layer, a multi-quantum well layer, an n-AlGaN contact layer, a u-AlGaN layer, an AlN template, and a sapphire substrate that are arranged in this order from a side opposite to the sapphire substrate, in which the thickness of the p-block layer is 52 to 56 nm, a two-dimensional reflecting photonic crystal periodic structure having a plurality of voids is provided in a region from the interface between the metal layer and the p-GaN contact layer to a position not beyond the interface between the p-GaN contact layer and the p-block layer in the thickness direction of the p-GaN contact layer, the distance from an end face of each of the voids in the direction of the sapphire substrate to the interface between the multi-quantum well layer and the i-guide layer satisfies ?/2n1Deff (where ? is the design wavType: GrantFiled: January 25, 2019Date of Patent: April 19, 2022Assignees: Marubun Corporation, Shibaura Machine Co., Ltd., RIKEN, ULVAC, Inc., Tokyo Ohka Kogyo Co., Ltd., Nippon Tungsten Co., Ltd., Dai Nippon Printing Co., Ltd., Dowa Holdings Co., Ltd.Inventors: Yukio Kashima, Eriko Matsuura, Mitsunori Kokubo, Takaharu Tashiro, Hideki Hirayama, Noritoshi Maeda, Masafumi Jo, Ryuichiro Kamimura, Yamato Osada, Kanji Furuta, Takeshi Iwai, Yohei Aoyama, Yasushi Iwaisako, Tsugumi Nagano, Yasuhiro Watanabe
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Patent number: 10950751Abstract: Provided is a deep ultraviolet LED with a design wavelength ?, including a reflecting electrode layer, an ultra-thin metal layer, and a p-type contact layer that are arranged in this order from a side opposite to a substrate; and a hemispherical lens bonded to a rear surface of the substrate on a side of the p-type contact layer, the hemispherical lens being transparent to light with the wavelength ?. The refractive index of the hemispherical lens is greater than or equal to the average value of the refractive index of the substrate and the refractive index of air and is less than or equal to the refractive index of the substrate. The hemispherical lens has a radius that is greater than or equal to the radius of an inscribed circle of the substrate and is about equal to the radius of a circumscribed circle of the substrate.Type: GrantFiled: April 28, 2020Date of Patent: March 16, 2021Assignees: Marubun Corporation, Toshiba Kikai Kabushiki Kaisha, RIKEN, ULVAC, INC., Tokyo Ohka Kogyo Co., Ltd.Inventors: Yukio Kashima, Eriko Matsuura, Mitsunori Kokubo, Takaharu Tashiro, Hideki Hirayama, Ryuichiro Kamimura, Yamato Osada, Toshiro Morita
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Publication number: 20210036186Abstract: A deep ultraviolet LED with a design wavelength ?, including a reflecting electrode layer (Au), a metal layer (Ni), a p-GaN contact layer, a p-block layer made of a p-AlGaN layer, an i-guide layer made of an AlN layer, a multi-quantum well layer, an n-AlGaN contact layer, a u-AlGaN layer, an AlN template, and a sapphire substrate that are arranged in this order from a side opposite to the sapphire substrate, in which the thickness of the p-block layer is 52 to 56 nm, a two-dimensional reflecting photonic crystal periodic structure having a plurality of voids is provided in a region from the interface between the metal layer and the p-GaN contact layer to a position not beyond the interface between the p-GaN contact layer and the p-block layer in the thickness direction of the p-GaN contact layer, the distance from an end face of each of the voids in the direction of the sapphire substrate to the interface between the multi-quantum well layer and the i-guide layer satisfies ?/2n1Deff (where ? is the design wavType: ApplicationFiled: January 25, 2019Publication date: February 4, 2021Inventors: Yukio KASHIMA, Eriko MATSUURA, Mitsunori KOKUBO, Takaharu TASHIRO, Hideki HIRAYAMA, Noritoshi MAEDA, Masafumi JO, Ryuichiro KAMIMURA, Yamato OSADA, Kanji FURUTA, Takeshi IWAI, Yohei AOYAMA, Yasushi IWAISAKO, Tsugumi NAGANO, Yasuhiro WATANABE
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Publication number: 20200313041Abstract: Provided is a deep ultraviolet LED with a design wavelength ?, including a reflecting electrode layer, an ultra-thin metal layer, and a p-type contact layer that are arranged in this order from a side opposite to a substrate; and a hemispherical lens bonded to a rear surface of the substrate on a side of the p-type contact layer, the hemispherical lens being transparent to light with the wavelength ?. The refractive index of the hemispherical lens is greater than or equal to the average value of the refractive index of the substrate and the refractive index of air and is less than or equal to the refractive index of the substrate. The hemispherical lens has a radius that is greater than or equal to the radius of an inscribed circle of the substrate and is about equal to the radius of a circumscribed circle of the substrate.Type: ApplicationFiled: April 28, 2020Publication date: October 1, 2020Inventors: Yukio KASHIMA, Eriko MATSUURA, Mitsunori KOKUBO, Takaharu TASHIRO, Hideki HIRAYAMA, Ryuichiro KAMIMURA, Yamato OSADA, Toshiro MORITA
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Patent number: 10680134Abstract: Provided is a deep ultraviolet LED with a design wavelength ?, including a reflecting electrode layer, an ultra-thin metal layer, and a p-type contact layer that are arranged in this order from a side opposite to a substrate; and a hemispherical lens bonded to a rear surface of the substrate on a side of the p-type contact layer, the hemispherical lens being transparent to light with the wavelength ?. The refractive index of the hemispherical lens is greater than or equal to the average value of the refractive index of the substrate and the refractive index of air and is less than or equal to the refractive index of the substrate. The hemispherical lens has a radius that is greater than or equal to the radius of an inscribed circle of the substrate and is about equal to the radius of a circumscribed circle of the substrate.Type: GrantFiled: September 2, 2016Date of Patent: June 9, 2020Assignees: Marubun Corporation, Toshiba Kikai Kabushiki Kaisha, RIKEN, ULVAC, INC., Tokyo Ohka Kogyo Co., Ltd.Inventors: Yukio Kashima, Eriko Matsuura, Mitsunori Kokubo, Takaharu Tashiro, Hideki Hirayama, Ryuichiro Kamimura, Yamato Osada, Toshiro Morita
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Publication number: 20180248075Abstract: Provided is a deep ultraviolet LED with a design wavelength ?, including a reflecting electrode layer, an ultra-thin metal layer, and a p-type contact layer that are arranged in this order from a side opposite to a substrate; and a hemispherical lens bonded to a rear surface of the substrate on a side of the p-type contact layer, the hemispherical lens being transparent to light with the wavelength ?. The refractive index of the hemispherical lens is greater than or equal to the average value of the refractive index of the substrate and the refractive index of air and is less than or equal to the refractive index of the substrate. The hemispherical lens has a radius that is greater than or equal to the radius of an inscribed circle of the substrate and is about equal to the radius of a circumscribed circle of the substrate.Type: ApplicationFiled: September 2, 2016Publication date: August 30, 2018Applicants: MARUBUN CORPORATION, MARUBUN CORPORATION, RIKEN, ULVAC, INC., TOKYO OHKA KOGYO CO., LTD.Inventors: Yukio KASHIMA, Eriko MATSUURA, Mitsunori KOKUBO, Takaharu TASHIRO, Hideki HIRAYAMA, Ryuichiro KAMIMURA, Yamato OSADA, Toshiro MORITA
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Patent number: 10056526Abstract: The light extraction efficiency of a deep ultraviolet LED is increased. The deep ultraviolet LED has a design wavelength ?, and includes, sequentially arranged from a side opposite to a substrate, a reflecting electrode layer, a metal layer, a p-GaN contact layer, a p-AlGaN layer that is transparent to light with the wavelength ?, one of a multi-quantum barrier layer or an electron blocking layer, a barrier layer, and a quantum well layer. A thickness of the p-AlGaN layer is less than or equal to 100 nm. A reflecting photonic crystal periodic structure having a plurality of voids is provided in a region in a thickness direction including at least an interface between the p-GaN contact layer and the p-AlGaN layer such that the reflecting photonic crystal periodic structure does not extend beyond the p-AlGaN layer in a direction of the substrate.Type: GrantFiled: November 1, 2016Date of Patent: August 21, 2018Assignees: MARUBUN CORPORATION, TOSHIBA KIKAI KABUSHIKI KAISHA, RIKEN, ULVAC, INC., TOKYO OHKA KOGYO CO., LTD.Inventors: Yukio Kashima, Eriko Matsuura, Mitsunori Kokubo, Takaharu Tashiro, Hideki Hirayama, Ryuichiro Kamimura, Yamato Osada, Toshiro Morita
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Publication number: 20180198026Abstract: The light extraction efficiency of a deep ultraviolet LED is increased. The deep ultraviolet LED has a design wavelength ?, and includes, sequentially arranged from a side opposite to a substrate, a reflecting electrode layer, a metal layer, a p-GaN contact layer, a p-AlGaN layer that is transparent to light with the wavelength ?, one of a multi-quantum barrier layer or an electron blocking layer, a barrier layer, and a quantum well layer. A thickness of the p-AlGaN layer is less than or equal to 100 nm. A reflecting photonic crystal periodic structure having a plurality of voids is provided in a region in a thickness direction including at least an interface between the p-GaN contact layer and the p-AlGaN layer such that the reflecting photonic crystal periodic structure does not extend beyond the p-AlGaN layer in a direction of the substrate.Type: ApplicationFiled: November 1, 2016Publication date: July 12, 2018Applicants: MARUBUN CORPORATION, TOSHIBA KIKAI KABUSHIKI KAISHA, RIKEN, ULVAC, INC., TOKYO OHKA KOGYO CO., LTD.Inventors: Yukio KASHIMA, Eriko MATSUURA, Mitsunori KOKUBO, Takaharu TASHIRO, Hideki HIRAYAMA, Ryuichiro KAMIMURA, Yamato OSADA, Toshiro MORITA
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Patent number: 9929317Abstract: Provided is a deep ultraviolet LED with a design wavelength ?, including an Al reflecting electrode layer, an ultrathin metal layer, and a transparent p-AlGaN contact layer that are sequentially arranged from a side opposite to a substrate, and a photonic crystal periodic structure provided in the range of the thickness direction of the transparent p-AlGaN contact layer. The photonic crystal periodic structure has a photonic band gap.Type: GrantFiled: July 29, 2015Date of Patent: March 27, 2018Assignees: MARUBUN CORPORATION, TOSHIBA KIKAI KABUSHIKI KAISHA, RIKEN, ULVAC, INC., TOKYO OHKA KOGYO CO., LTD.Inventors: Yukio Kashima, Eriko Matsuura, Mitsunori Kokubo, Takaharu Tashiro, Takafumi Ookawa, Hideki Hirayama, Noritoshi Maeda, Masafumi Jo, Ryuichiro Kamimura, Yamato Osada, Satoshi Shimatani
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Patent number: 9929311Abstract: A semiconductor light emitting element with a design wavelength of ?, comprising a photonic crystal periodic structure having two structures with different refractive indices at each of one or more interfaces between layers that form the light emitting element. The period a and the radius R that are parameters of each of the one or more periodic structures and the design wavelength ? satisfy Bragg conditions. The ratio (R/a) between the period a and the radius R is a value determined so that a predetermined photonic band gap (PBG) for TE light becomes maximum for each periodic structure. The parameters of each periodic structure are determined so that light extraction efficiency of the entire semiconductor light emitting element with respect to light with the wavelength ? becomes maximum as a result of conducting a simulation analysis with a FDTD method using as variables the depth h of the periodic structure that is of greater than or equal to 0.Type: GrantFiled: July 16, 2014Date of Patent: March 27, 2018Assignees: MARUBUN CORPORATION, TOSHIBA KIKAI KABUSHIKI KAISHA, RIKEN, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE & TECHNOLOGY, ULVAC, INC., TOKYO OHKA KOGYO CO., LTD.Inventors: Yukio Kashima, Eriko Matsuura, Mitsunori Kokubo, Takaharu Tashiro, Takafumi Ookawa, Hideki Hirayama, Sung Won Youn, Hideki Takagi, Ryuichiro Kamimura, Yamato Osada, Satoshi Shimatani
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Publication number: 20170358712Abstract: A deep ultraviolet LED with a design wavelength of ? is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of ?; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.Type: ApplicationFiled: July 29, 2015Publication date: December 14, 2017Inventors: Yukio KASHIMA, Eriko MATSUURA, Mitsunori KOKUBO, Takaharu TASHIRO, Takafumi OOKAWA, Hideki HIRAYAMA, Noritoshi MAEDA
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Patent number: 9806229Abstract: A deep ultraviolet LED with a design wavelength of ? is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of ?; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.Type: GrantFiled: October 24, 2014Date of Patent: October 31, 2017Assignees: MARUBUN CORPORATION, TOSHIBA KIKAI KABUSHIKI KAISHA, RIKEN, ULVAC, INC., TOKYO OHKA KOGYO CO., LTD.Inventors: Yukio Kashima, Eriko Matsuura, Mitsunori Kokubo, Takaharu Tashiro, Takafumi Ookawa, Hideki Hirayama, Ryuichiro Kamimura, Yamato Osada, Satoshi Shimatani
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Patent number: 9728677Abstract: A deep ultraviolet LED with a design wavelength of ? is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of ?; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.Type: GrantFiled: October 24, 2014Date of Patent: August 8, 2017Assignees: MARUBUN CORPORATION, TOSHIBA KIKAI KABUSHIKI KAISHA, RIKEN, ULVAC, INC., TOKYO OHKA KOGYO CO., LTD.Inventors: Yukio Kashima, Eriko Matsuura, Mitsunori Kokubo, Takaharu Tashiro, Takafumi Ookawa, Hideki Hirayama, Ryuichiro Kamimura, Yamato Osada, Satoshi Shimatani
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Patent number: 9614123Abstract: A deep ultraviolet LED with a design wavelength of ? is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of ?; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.Type: GrantFiled: October 24, 2014Date of Patent: April 4, 2017Assignees: MARUBUN CORPORATION, TOSHIBA KIKAI KABUSHIKI KAISHA, RIKEN, ULVAC, INC., TOKYO OHKA KOGYO CO., LTD.Inventors: Yukio Kashima, Eriko Matsuura, Mitsunori Kokubo, Takaharu Tashiro, Takafumi Ookawa, Hideki Hirayama, Ryuichiro Kamimura, Yamato Osada, Satoshi Shimatani
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Patent number: 9349918Abstract: A semiconductor light emitting element including, in a light extraction layer thereof, a photonic crystal periodic structure including two systems (structures) with different refractive indices. An interface between the two systems (structures) satisfies Bragg scattering conditions, and the photonic crystal periodic structure has a photonic band gap.Type: GrantFiled: May 25, 2012Date of Patent: May 24, 2016Assignees: MARUBUN CORPORATION, TOSHIBA KIKAI KABUSHIKI KAISHA, RIKEN, ULVAC, INC.Inventors: Yukio Kashima, Eriko Matsuura, Hiromi Nishihara, Takaharu Tashiro, Takafumi Ookawa, Hideki Hirayama, Sachie Fujikawa, Sung Won Youn, Hideki Takagi, Ryuichiro Kamimura, Yamato Osada
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Publication number: 20160133785Abstract: A deep ultraviolet LED with a design wavelength of ? is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of ?; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.Type: ApplicationFiled: October 24, 2014Publication date: May 12, 2016Inventors: Yukio KASHIMA, Eriko MATSUURA, Mitsunori KOKUBO, Takaharu TASHIRO, Takafumi OOKAWA, Hideki HIRAYAMA, Ryuichiro KAMIMURA, Yamato OSADA, Satoshi SHIMATANI
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Publication number: 20160042102Abstract: A semiconductor light emitting element with a design wavelength of ?, comprising a photonic crystal periodic structure having two structures with different refractive indices at each of one or more interfaces between layers that form the light emitting element. The period a and the radius R that are parameters of each of the one or more periodic structures and the design wavelength ? satisfy Bragg conditions. The ratio (R/a) between the period a and the radius R is a value determined so that a predetermined photonic band gap (PBG) for TE light becomes maximum for each periodic structure. The parameters of each periodic structure are determined so that light extraction efficiency of the entire semiconductor light emitting element with respect to light with the wavelength ? becomes maximum as a result of conducting a simulation analysis with a FDTD method using as variables the depth h of the periodic structure that is of greater than or equal to 0.Type: ApplicationFiled: July 16, 2014Publication date: February 11, 2016Inventors: Yukio KASHIMA, Eriko MATSUURA, Mitsunori KOKUBO, Takaharu TASHIRO, Takafumi OOKAWA, Hideki HIRAYAMA, Won Sung YOUN, Hideki TAKAGI, Ryuichiro KAMIMURA, Yamato OSADA, Satoshi SHIMATANI
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Patent number: 8921135Abstract: A method for manufacturing a device having a concavo-convex structure includes forming an organic resist film on an n-type semiconductor layer in which a fine concavo-convex structure is to be formed; forming a silicon-containing resist film on the organic resist film; patterning the silicon-containing resist film by nanoimprint; oxidizing the silicon-containing resist film with oxygen-containing plasma to form a silicon oxide film; dry-etching the organic resist film by using the silicon oxide film as an etching mask; dry-etching the n-type semiconductor layer by using the silicon oxide film and the organic resist film as an etching masks; and removing the silicon oxide film and the organic resist film.Type: GrantFiled: February 18, 2013Date of Patent: December 30, 2014Assignees: Ulvac, Inc., Marubun Corporation, Toshiba Kikai Kabushiki KaishaInventors: Ryuichiro Kamimura, Yamato Osada, Yukio Kashima, Hiromi Nishihara, Takaharu Tashiro, Takafumi Ookawa
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Publication number: 20140167066Abstract: A semiconductor light emitting element including, in a light extraction layer thereof, a photonic crystal periodic structure including two systems (structures) with different refractive indices. An interface between the two systems (structures) satisfies Bragg scattering conditions, and the photonic crystal periodic structure has a photonic band gap.Type: ApplicationFiled: May 25, 2012Publication date: June 19, 2014Applicants: MARUBUN CORPORATION, ULVAC, INC., RIKEN, TOSHIBA KIKAI KABUSHIKI KAISHAInventors: Yukio Kashima, Eriko Matsuura, Hiromi Nishihara, Takaharu Tashiro, Takafumi Ookawa, Hideki Hirayama, Sachie Fujikawa, Sung Won Youn, Hideki Takagi, Ryuichiro Kamimura, Yamato Osada
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Publication number: 20140057377Abstract: A method for manufacturing a device having a concavo-convex structure includes forming an organic resist film on an n-type semiconductor layer in which a fine concavo-convex structure is to be formed; forming a silicon-containing resist film on the organic resist film; patterning the silicon-containing resist film by nanoimprint; oxidizing the silicon-containing resist film with oxygen-containing plasma to form a silicon oxide film; dry-etching the organic resist film by using the silicon oxide film as an etching mask; dry-etching the n-type semiconductor layer by using the silicon oxide film and the organic resist film as an etching masks; and removing the silicon oxide film and the organic resist film.Type: ApplicationFiled: February 18, 2013Publication date: February 27, 2014Applicants: ULVAC, INC., TOSHIBA KIKAI KABUSHIKI KAISHA, MARUBUN CORPORATIONInventors: Ryuichiro Kamimura, Yamato Osada, Yukio Kashima, Hiromi Nishihara, Takaharu Tashiro, Takafumi Ookawa