Abstract: A semiconductor device includes a wiring layer; a first stacked body disposed on the wiring layer; a second stacked body disposed on the first stacked body in a stacking direction; and a first resin body disposed around a periphery of the first stacked body. The first stacked body includes a first pad electrically connected to the wiring layer, a first device layer electrically connected to the first pad, and a first electrode electrically connected to the first device layer. The second stacked body includes a second pad electrically connected to the first electrode and a second device layer electrically connected to the second pad. In the stacking direction, the first resin body is vertically located closer to the wiring layer than an interface between the first stacked body and the second stacked body.

Abstract: A semiconductor device including a base substrate B, which includes wire layers, chips C1, C2, C3, C4, C5, and C6 provided on the base substrate B, and a protective film P provided on each of the side faces of the chips C1, C2, C3, C4, C5, and C6.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a plurality of stacked bodies on a substrate, each of the stacked bodies includes a plurality of semiconductor chips. The method further includes forming a plurality of first wires on the stacked bodies. The first wires connecting the stacked bodies to each other. The method further includes forming a resin layer on the stacked bodies and the first wires, then thinning he resin layer until the first wires are exposed.

Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor device including a semiconductor chip having electrode pads formed on a first major surface and a bonding layer provided on a second major surface, and a substrate having the semiconductor chip mounted on the substrate. The manufacturing method can include applying a fillet-forming material to a portion contacting an outer edge of the second major surface of the semiconductor chip on a front face of the substrate. The method can include bonding the second major surface of the semiconductor chip to the substrate via the bonding layer.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device, a bonding layer is formed on a first surface of a chip region of a semiconductor wafer. Semiconductor chips are singulated along a dicing region. The semiconductor chips are stacked stepwise via the bonding layer. In formation of the bonding layer of the semiconductor chip, in at least a part of a first region of the first surface not in contact with the other semiconductor chip in a stacked state, a projected section where the bonding layer is formed thicker than the bonding layer in a second region that is in contact with the other semiconductor chip is provided.

Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include die bonding to bond a semiconductor element to a first position of a base member via a bonding layer provided on one surface of the semiconductor element. The method can include wire bonding to connect a terminal formed on the semiconductor element to a terminal formed on the base member by a bonding wire. In addition, the method can include sealing to seal the semiconductor element and the bonding wire. Viscosity of the bonding layer in the bonding is controlled not to exceed the viscosity of the bonding layer in the sealing.

Abstract: In one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include, upon attaching a bonding material containing a resin and a solvent to a second surface opposed to a first surface including a circuit pattern of a wafer, heating the bonding material to evaporate the solvent and decreasing vapor pressure of the solvent in an atmosphere faced with the bonding material and heating the attached bonding material to form a bonding layer.

Abstract: In one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include, upon attaching a bonding material containing a resin and a solvent to a second surface opposed to a first surface including a circuit pattern of a wafer, heating the bonding material to evaporate the solvent and decreasing vapor pressure of the solvent in an atmosphere faced with the bonding material and heating the attached bonding material to form a bonding layer.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device, a bonding layer is formed on a first surface of a chip region of a semiconductor wafer. Semiconductor chips are singulated along a dicing region. The semiconductor chips are stacked stepwise via the bonding layer. In formation of the bonding layer of the semiconductor chip, in at least a part of a first region of the first surface not in contact with the other semiconductor chip in a stacked state, a projected section where the bonding layer is formed thicker than the bonding layer in a second region that is in contact with the other semiconductor chip is provided.

Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor device including a semiconductor chip having electrode pads formed on a first major surface and a bonding layer provided on a second major surface, and a substrate having the semiconductor chip mounted on the substrate. The manufacturing method can include applying a fillet-forming material to a portion contacting an outer edge of the second major surface of the semiconductor chip on a front face of the substrate. The method can include bonding the second major surface of the semiconductor chip to the substrate via the bonding layer.

Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include die bonding to bond a semiconductor element to a first position of a base member via a bonding layer provided on one surface of the semiconductor element. The method can include wire bonding to connect a terminal formed on the semiconductor element to a terminal formed on the base member by a bonding wire. In addition, the method can include sealing to seal the semiconductor element and the bonding wire. Viscosity of the bonding layer in the bonding is controlled not to exceed the viscosity of the bonding layer in the sealing.

Abstract: In one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include, upon attaching a bonding material containing a resin and a solvent to a second surface opposed to a first surface including a circuit pattern of a wafer, heating the bonding material to evaporate the solvent and decreasing vapor pressure of the solvent in an atmosphere faced with the bonding material and heating the attached bonding material to form a bonding layer.

Abstract: A semiconductor device manufacturing apparatus includes: an accommodation section accommodating an application object; an irradiation section irradiating the application object taken out from the accommodation section with ultraviolet light; an application section including a stage allowing the application object to be placed thereon and an application head discharging a plurality of droplets of an adhesive to the application object placed on the stage, the application section applying the adhesive through the application head to the application object which is irradiated by ultraviolet light through the irradiation section and is placed on the stage; a drying section drying the adhesive applied on the application object with heat; and a transport section including a hand supporting the application object, the transport section which is capable of transporting the application object accommodated in the accommodation section to the irradiation section, the application section, and the drying section.

Abstract: According to one embodiment, a method for manufacturing semiconductor device can include forming a groove with a depth shallower than a thickness of a wafer. The method can include attaching a surface protection tape via a first bonding layer provided in the surface protection tape. The method can include grinding a surface of the wafer to divide the wafer into a plurality of semiconductor elements. The method can include forming an element bonding layer by attaching a bonding agent and turning the attached bonding agent into a B-stage state. The method can include attaching a dicing tape via a second bonding layer provided in the dicing tape. The method can include irradiating the first bonding layer with a first active energy ray. The method can include removing the surface protection tape. The method can include irradiating the second bonding layer with a second active energy ray.

Abstract: According to one embodiment, semiconductor memory device including: a circuit substrate in which a circuit pattern is formed; a plurality of semiconductor memories mounted via a solder on both surfaces of the circuit substrate; a connector disposed at one end part of the circuit substrate for connection with a host device; and a resin mold part that seals the both surfaces of the circuit substrate. The resin mold part does not seal a region in which the connector is disposed and collectively seals regions in which the plurality of semiconductor memories are disposed.