Abstract: Wiring lines for the supply of a voltage to feed a drive voltage to an integrated circuit formed in a semiconductor chip are disposed so as to cover a main surface of the semiconductor chip, so that, if the wiring lines are removed for the purpose of analyzing information stored in the semiconductor chip, the integrated circuit does not operate and it is impossible to analyze the information. Further, there is provided a processing detector circuit for detecting that the wiring lines have been tampered with. When the processing detector circuit detects a change in the state of the wiring lines, the integrated circuit is reset. Thus, it is possible to improve the security of information stored on the card.

Abstract: Wiring lines for the supply of a voltage to feed a drive voltage to an integrated circuit formed in a semiconductor chip are disposed so as to cover a main surface of the semiconductor chip, so that, if the wiring lines are removed for the purpose of analyzing information stored in the semiconductor chip, the integrated circuit does not operates and it is impossible to analyze the information. Further, there is provided a processing detector circuit for detecting that the wiring lines have been tampered with. When the processing detector circuit detects a change in the sate of the wiring lines, the integrated circuit is reset. Thus, it is possible to improve the security of information stored on the card.

Abstract: A needle cover is moveable in the axial direction of a needle body is included. When a cap covering the needle body is detached from a hub, locking portions on a cap are locked at a first locking portion of the cover and the cover moves to the tip end side of the needle body with the cap, so the tip end side of the needle body is covered by the cover. Therefore, the external force in the bending direction is not directly applied to the needle body when or after the cap is detached. Since the needle cover can be moved to the tip end side of the needle body by locking the cap to the needle cover, no spring is needed to move the cover to the tip end side of the needle body, or form the cover into an extendable and retractable complicated shape.

Abstract: In manufacturing a multilayered gas sensor element which includes a sensor cell for measuring a specific gas concentration in a measured gas, a main body portion including a plurality of laminated ceramic substrates, and a plate heater portion generating heat in response to supply of electric power, which are integrally laminated in a predetermined order, a multilayered body of green sheets forming the main body portion and the heater portion is sintered into a multilayered gas sensor element, and then at least both side surfaces of the multilayered gas sensor element extending in a longitudinal direction are processed by grinding, so as to remove surface defects.

Abstract: Wiring lines for the supply of a voltage to feed a drive voltage to an integrated circuit formed in a semiconductor chip are disposed so as to cover a main surface of the semiconductor chip, so that, if the wiring lines are removed for the purpose of analyzing information stored in the semiconductor chip, the integrated circuit does not operates and it is impossible to analyze the information. Further, there is provided a processing detector circuit for detecting that the wiring lines have been tampered with. When the processing detector circuit detects a change in the sate of the wiring lines, the integrated circuit is reset. Thus, it is possible to improve the security of information stored on the card.

Abstract: In the inventive fabrication process for electrodes for electrochemical devices, when the coating film is rolled so as to increase its density, the given binder solvent is intentionally allowed to remain in an amount good enough to keep pores on the surface of the active substance uncrushed, and after the rolling operation is carried out, the solvent extraction operation is conducted to remove the binder solvent remaining in the pores in the coating film. Thus, an electrochemical device using an electrode according to the inventive fabrication process is much improved in electrostatic capacity as well as in durability and reliability as well.

Abstract: Wiring lines for the supply of a voltage to feed a drive voltage to an integrated circuit formed in a semiconductor chip are disposed so as to cover a main surface of the semiconductor chip, so that, if the wiring lines are removed for the purpose of analyzing information stored in the semiconductor chip, the integrated circuit does not operate and it is impossible to analyze the information. Further, there is provided a processing detector circuit for detecting that the wiring lines have been tampered with. When the processing detector circuit detects a change in the state of the wiring lines, the integrated circuit is reset. Thus, it is possible to improve the security of information stored on the card.

Abstract: Provided is an inspection method for a multilayer gas sensing device, capable of certainly and easily detecting a defective product originating from faults such as gaps or cracks. For the inspection of the gas sensing device including a sensor cell in which a measured gas side electrode is coated with a porous diffusion resistance layer in a stacked condition and the diffusion resistance layer is further coated with a dense protective layer in a stacked condition, in a state where the gas sensing device is immersed in a conductive inspection solution and a reference electrode of the sensor cell is placed into a non-contact with the solution, a voltage is applied between the solution and the reference electrode to measure a current flowing therebetween. On the basis of the measured current value, a decision is made as to whether or not the insulation is kept between the solution and the reference electrode.

Abstract: Wiring lines for the supply of a voltage to feed a drive voltage to an integrated circuit formed in a semiconductor chip are disposed so as to cover a main surface of the semiconductor chip, so that, if the wiring lines are removed for the purpose of analyzing information stored in the semiconductor chip, the integrated circuit does not operate and it is impossible to analyze the information. Further, there is provided a processing detector circuit for detecting that the wiring lines have been tampered with. When the processing detector circuit detects a change in the state of the wiring lines, the integrated circuit is reset. Thus, it is possible to improve the security of information stored on the card.

Abstract: In manufacturing a multilayered gas sensor element which includes a sensor cell for measuring a specific gas concentration in a measured gas, a main body portion including a plurality of laminated ceramic substrates, and a plate heater portion generating heat in response to supply of electric power, which are integrally laminated in a predetermined order, a multilayered body of green sheets forming the main body portion and the heater portion is sintered into a multilayered gas sensor element, and then at least both side surfaces of the multilayered gas sensor element extending in a longitudinal direction are processed by grinding, so as to remove surface defects.

Abstract: Provided is an inspection method for a multilayer gas sensing device, capable of certainly and easily detecting a defective product originating from faults such as gaps or cracks. For the inspection of the gas sensing device including a sensor cell in which a measured gas side electrode is coated with a porous diffusion resistance layer in a stacked condition and the diffusion resistance layer is further coated with a dense protective layer in a stacked condition, in a state where the gas sensing device is immersed in a conductive inspection solution and a reference electrode of the sensor cell is placed into a non-contact with the solution, a voltage is applied between the solution and the reference electrode to measure a current flowing therebetween. On the basis of the measured current value, a decision is made as to whether or not the insulation is kept between the solution and the reference electrode.

Abstract: A management method is for managing, in real time, the status of a baby-sitter dispatched based on a request from a user. When occurrence of abnormality is received from the dispatched baby-sitter, another baby-sitter is searched who is in the neighborhood of the baby-sitter from whom the occurrence of abnormality has been received, and the another baby-sitter is instructed on necessary measures to be taken. A program for managing baby-sitters allows a computer to execute an abnormality receive step which includes receiving occurrence of abnormality from a baby-sitter, and an abnormality-dealing step which includes searching another baby-sitter in the neighborhood of the baby-sitter who sent the occurrence of abnormality, and instructing the another baby-sitter to take necessary measures.

Abstract: An electrolyzing electrode which is for electrolyzing a metal electrolytic solution, shows a long lifetime in use as an ordinary anode and has sufficient durability even when in a poor potential region, and a process for the production thereof. The electrolyzing electrode of the present invention has an undercoating layer which is formed of platinum metal and tantalum oxide and contains, as metals, 1 to 20 at % of platinum and 80 to 99 at % of tantalum, on an electrically conductive electrode substrate, has an intermediate layer which is formed of iridium oxide and tantalum oxide and contains, as metals, 70 to 99.9 at % of iridium and 0.1 to 30 at % of tantalum, on the undercoating layer, and further has an overcoating layer which is formed of platinum metal and iridium oxide and contains, as metals, 60 to 99.9 at % of platinum and 0.1 to 40 at % of iridium, on the intermediate layer.

Abstract: Between an external terminal and the gate of one of output MOSFETs whose source or drain is connected to the external terminal, there is connected a P-channel type first protective MOSFET whose gate is connected to a high voltage side power supply terminal and which has a channel length equal to or larger than that of the output MOSFET, or an N-channel type second protective MOSFET whose gate is connected to a low voltage side power supply terminal and which has a channel length equal to or larger then that of the output MOSFET. When the external terminal is discharged by device charge, one of the protective MOSFETs is turned on, and the charge on the gate side of the output MOSFET can be likewise released by device charge to prevent ESD (Electro-Static Discharge) breakdown.

Abstract: A length of electroplated metal foil, typically copper foil is prepared by placing a stationary arcuate anode concentrically with a rotating cathode drum to define a channel therebetween, passing a plating solution through the channel, conducting electricity across the channel for depositing metal on the cathode drum, and separating the metal deposit from the cathode drum. The anode includes a plurality of circumferentially arranged electrode segments formed of a valve metal material and coated with a platinum group metal or oxide thereof. The electrode segments are removably attached and electrically connected to a back plate. The split anode is easy in assembly and disassembly and, hence, in maintenance and repair, has a high degree of precision in configuration and dimensions, and ensures manufacture of copper foil of quality with a minimized variation in thickness during continuous operation.

Abstract: Between an external terminal and the gate of one of output MOSFETs whose source or drain is connected to the external terminal, there is connected a P-channel type first protective MOSFET whose gate is connected to a high voltage side power supply terminal and which has a channel length equal to or larger than that of the output MOSFET, or an N-channel type second protective MOSFET whose gate is connected to a low voltage side power supply terminal and which has a channel length equal to or larger then that of the output MOSFET. When the external terminal is discharged by device charge, one of the protective MOSFETs is turned on, and the charge on the gate side of the output MOSFET can be likewise released by device charge to prevent ESD (Electro-Static Discharge) breakdown.

Abstract: Between an external terminal and the gate of one of output MOSFETs whose source or drain is connected to the external terminal, there is connected a P-channel type first protective MOSFET whose gate is connected to a high voltage side power supply terminal and which has a channel length equal to or larger than that of the output MOSFET, or an N-channel type second protective MOSFET whose gate is connected to a low voltage side power supply terminal and which has a channel length equal to or larger then that of the output MOSFET. When the external terminal is discharged by device charge, one of the protective MOSFETs is turned on, and the charge on the gate side of the output MOSFET can be likewise released by device charge to prevent ESD (Electro-Static Discharge) breakdown.

Abstract: An oxygen generating electrode has on a conductive substrate a first layer of metallic platinum and tantalum oxide containing 80-99 mol% of Ta and 20-1 mol% of Pt, a second layer of iridium oxide and tantalum oxide containing 80-99.9 mol% of Ir and 20-0.1 mol% of Ta, and preferably a third layer of iridium oxide and tantalum oxide containing 40-79.9 mol% of Ir and 60-20.1 mol% of Ta. In another embodiment, the first layer consists of iridium oxide and tantalum oxide and contains 14-8.4 mol% of Ir and 86-91.6 mol% of Ta. The electrode, when used as an anode in electrolysis with concomitant oxygen generation, can be used for an extended period at a low bath voltage. It is adapted for electrolysis at a high current density of more than 100 A/cm.sup.2 since it maintains mechanical strength and has a long effective life. It experiences a minimal change of oxygen overvoltage with time.

Abstract: The electrode of the invention suitable for use in an oxygen-generating electrolytic process with durability comprises (A) a substrate of, e.g., titanium metal; (B) an undercoating layer thereon which is formed of a mixture of an iridium oxide and tantalum oxide in a limited molar proportion and (C) an overcoating layer formed of an iridium oxide. The undercoating layer can be formed by coating the substrate surface with a solution containing an iridium compound and tantalum compound each having thermal decomposability and then subjecting the coated substrate body to a heat treatment in an oxidizing atmosphere. Similarly, the overcoating layer can be formed by coating with a solution containing a thermally decomposable iridium compound followed by an oxidative heat treatment in an oxidizing atmosphere.

Abstract: Proposal is made for providing a high-performance electrode suitable for use in an oxygen-generating electrolytic process having an outstandingly low oxygen overvoltage and exhibiting high durability in a prolonged run of electrolysis. The electrode consists of an electroconductive substrate of a metal, e.g., titanium, and a multiple composite oxide coating layer thereon consisting of at least one layer of type A composed of iridium oxide and tantalum oxide in an Ir:Ta molar ratio of 40:60 to 79.9:20.1 and at least one layer of type B formed on the type A layer composed of iridium oxide and tantalum oxide in an Ir:Ta molar ratio of 80:20 to 99.9:0.1. A plural number of type A layers and a plural number of type B layers can be alternately laid one on the other so as to improve the mechanical stability of the coating layer on the substrate surface.