Abstract: This SiC ingot includes a facet, wherein, when a diameter of the SiC ingot is represented as D and in a plan view in a crystal growth direction, a virtual rectangle that surrounds the facet with a minimum area and has a first side parallel to a <11-20>direction and a second side parallel to a <1-100>direction is drawn, and a length of the first side of the virtual rectangle is represented as Lx, Lx/D<0.3 is satisfied at a first end which is a terminal of the crystal growth direction.

Abstract: This SiC ingot is formed of a SiC single crystal grown from a first end inclined by an offset angle from a (0001) plane toward a second end, the SiC ingot includes a step-flow growth region and a facet, and in a cut surface that passes through a center and is in a <11-20> direction, an angle between an inner boundary between the facet and the step-flow growth region and a crystal growth direction is 56° or less.

Abstract: The present invention provides a method of manufacturing by the sublimation-recrystallization method more accurately detecting a thermal state of a starting material in a crucible and enabling control of the growth conditions while manufacturing an SiC single crystal.

Abstract: Provided is a SiC single crystal wafer, which is manufactured from a SiC single crystal ingot grown by the sublimation-recrystallization method, and which brings about high device performance and high device manufacture yield when used as a wafer for manufacturing a device. The SiC single crystal wafer has, in a surface thereof, a basal plane dislocation density of 1,000 dislocations per cm2 or less, a threading screw dislocation density of 500 dislocations per cm2 or less, and a Raman index of 0.2 or less. Further provided is a method of manufacturing a SiC single crystal ingot, including controlling heat input from a side surface of the single crystal ingot during growth of a single crystal, to thereby grow the crystal while changes in the temperature distribution of the single crystal ingot are reduced.

Abstract: The present invention provides a method of manufacturing by the sublimation-recrystallization method more accurately detecting a thermal state of a starting material in a crucible and enabling control of the growth conditions while manufacturing an SiC single crystal.

Abstract: Provided are a method of evaluating an internal stress of a silicon carbide (SiC) single crystal wafer and a method of predicting warpage of the SiC single crystal wafer after completion of polishing by evaluating the internal stress of the wafer. Wavenumber shift amounts of Raman-scattered light are measured at two points within a surface of the SiC single crystal wafer, and the internal stress is evaluated through use of a difference between the wavenumber shift amounts. Also provided is a method of predicting warpage of a silicon carbide single crystal wafer in advance, the silicon carbide single crystal wafer being produced by sublimation-recrystallization method, the method including predicting warpage of a SiC single crystal wafer through use of the evaluation indicator.

Abstract: Provided are a method of evaluating an internal stress of a silicon carbide (SiC) single crystal wafer and a method of predicting warpage of the SiC single crystal wafer after completion of polishing by evaluating the internal stress of the wafer. Wavenumber shift amounts of Raman-scattered light are measured at two points within a surface of the SiC single crystal wafer, and the internal stress is evaluated through use of a difference between the wavenumber shift amounts. Also provided is a method of predicting warpage of a silicon carbide single crystal wafer in advance, the silicon carbide single crystal wafer being produced by sublimation-recrystallization method, the method including predicting warpage of a SiC single crystal wafer through use of the evaluation indicator.

Abstract: Provided is a SiC single crystal wafer, which is manufactured from a SiC single crystal ingot grown by the sublimation-recrystallization method, and which brings about high device performance and high device manufacture yield when used as a wafer for manufacturing a device. The SiC single crystal wafer has, in a surface thereof, a basal plane dislocation density of 1,000 dislocations per cm2 or less, a threading screw dislocation density of 500 dislocations per cm2 or less, and a Raman index of 0.2 or less. Further provided is a method of manufacturing a SiC single crystal ingot, including controlling heat input from a side surface of the single crystal ingot during growth of a single crystal, to thereby grow the crystal while changes in the temperature distribution of the single crystal ingot are reduced.