Abstract: A bolt-locking apparatus includes a plurality of fitting members 2 and 3 which are relatively non-rotatably fitted to heads of a plurality of bolts 5, and an engaging member 4 fitted to the plurality of fitting members 2 and 3 such that the engaging member 4 straddles the fitting members 2 and 3. Outer peripheral surfaces 2b and 3b of the fitting members 2 and 3 are non-circular in shape. The engaging member 4 includes a plurality of engaging holes (non-circular engaging portions) 8a and 8b which correspond to the non-circular outer peripheral surfaces 2b and 3b of the plurality of fitting members 2 and 3.

Abstract: A bolt-locking apparatus includes a plurality of fitting members 2 and 3 which are relatively non-rotatably fitted to heads of a plurality of bolts 5, and an engaging member 4 fitted to the plurality of fitting members 2 and 3 such that the engaging member 4 straddles the fitting members 2 and 3. Outer peripheral surfaces 2b and 3b of the fitting members 2 and 3 are non-circular in shape. The engaging member 4 includes a plurality of engaging holes (non-circular engaging portions) 8a and 8b which correspond to the non-circular outer peripheral surfaces 2b and 3b of the plurality of fitting members 2 and 3.

Abstract: A bolt-locking apparatus includes a plurality of fitting members 2 and 3 which are relatively non-rotatably fitted to heads of a plurality of bolts 5, and an engaging member 4 fitted to the plurality of fitting members 2 and 3 such that the engaging member 4 straddles the fitting members 2 and 3. Outer peripheral surfaces 2b and 3b of the fitting members 2 and 3 are non-circular in shape. The engaging member 4 includes a plurality of engaging holes (non-circular engaging portions) 8a and 8b which correspond to the non-circular outer peripheral surfaces 2b and 3b of the plurality of fitting members 2 and 3.

Abstract: A bolt-locking apparatus includes a plurality of fitting members 2 and 3 which are relatively non-rotatably fitted to heads of a plurality of bolts 5, and an engaging member 4 fitted to the plurality of fitting members 2 and 3 such that the engaging member 4 straddles the fitting members 2 and 3. Outer peripheral surfaces 2b and 3b of the fitting members 2 and 3 are non-circular in shape. The engaging member 4 includes a plurality of engaging holes (non-circular engaging portions) 8a and 8b which correspond to the non-circular outer peripheral surfaces 2b and 3b of the plurality of fitting members 2 and 3.

Abstract: A bolt-locking apparatus includes a plurality of fitting members 2 and 3 which are relatively non-rotatably fitted to heads of a plurality of bolts 5, and an engaging member 4 fitted to the plurality of fitting members 2 and 3 such that the engaging member 4 straddles the fitting members 2 and 3. Outer peripheral surfaces 2b and 3b of the fitting members 2 and 3 are non-circular in shape. The engaging member 4 includes a plurality of engaging holes (non-circular engaging portions) 8a and 8b which correspond to the non-circular outer peripheral surfaces 2b and 3b of the plurality of fitting members 2 and 3.

Abstract: A bolt-locking apparatus includes a plurality of fitting members 2 and 3 which are relatively non-rotatably fitted to heads of a plurality of bolts 5, and an engaging member 4 fitted to the plurality of fitting members 2 and 3 such that the engaging member 4 straddles the fitting members 2 and 3. Outer peripheral surfaces 2b and 3b of the fitting members 2 and 3 are non-circular in shape. The engaging member 4 includes a plurality of engaging holes (non-circular engaging portions) 8a and 8b which correspond to the non-circular outer peripheral surfaces 2b and 3b of the plurality of fitting members 2 and 3.

Abstract: A piezoelectric oscillator is disclosed which falls under the category of an oscillator including a piezoelectric resonator, an amplifier, and a variable-capacitance element. The variable-capacitance element is a MOS construction type capacitance element, one terminal of that is fixed at a V voltage, and the other terminal of that is applied with a control voltage falling within a range whose intermediate value is the V voltage. As a result of this, a piezoelectric oscillator is realized which can vary its frequency over a wide range even without use of a minus power supply.

Abstract: An apparatus for treating a substrate which includes a chamber and an opening formed in the chamber allowing the substrate to be conveyed into the chamber or taken out thereof. The chamber, also, includes a detachable baffle plate that fits around an electrode. For treatment to commence, the substrate is placed on the electrode and the chamber is exhausted of or supplied with gases. The electrode is then vertically lifted together with the baffle plate and the baffle plate is moved either to a position that is higher in level than an upper end of the opening of the chamber or to a position that is lower in level than a lower end of the opening of the chamber. This allows the baffle plate to shield a region near the opening of the chamber from a treatment region and allows reaction products to be adhered to the baffle plate.

Abstract: A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

Abstract: A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

Abstract: A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

Abstract: A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the water.

Abstract: A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f.sub.1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f.sub.2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

Abstract: A plasma processing apparatus comprises a chamber, and an upper electrode and a lower electrode, parallelly provided in the chamber to oppose each other at a predetermined interval, for defining a plasma generation region between the electrodes. An object to be processed is mounted on the lower electrode. RF powers are supplied to the electrodes, so that a plasma generates between the electrodes, thereby performing a plasma process with respect to the object to be processed. A cylindrical ground electrode is provided around the plasma generation region in the chamber, for enclosing the plasma in the plasma generation region, and has a plurality of through holes for passing a process gas.

Abstract: A plasma etching apparatus includes a process chamber that can be set at a reduced pressure. A lower electrode on which a semiconductor wafer is placed and an upper electrode opposing the lower electrode are disposed in the process chamber. The lower and upper electrodes are connected to RF power supplies, respectively. First and second RF powers, the phases and power ratio of which are separately controlled, can be applied to the upper and lower electrodes. Parameters including the frequencies, power values, and relative phases of the first and second RF powers are selected in order to set the etching characteristics, e.g., an etching rate, the planar uniformity of the etching rate, the etching selectivity ratio and the like to predetermined values. During etching, the first and second RF powers are monitored by separate detectors, and are maintained at initial preset values through a controller.

Abstract: A plasma treatment apparatus comprising a chamber earthed, a vacuum pump for exhausting the chamber, a suscepter on which a wafer is mounted, a shower electrode arranged in the chamber, opposing to the suscepter, a unit for supplying plasma generating gas to the wafer on the suscepter through the shower electrode, a first radio frequency power source for adding radio frequency voltage, which has a first frequency f.sub.1, to both of the suscepter and the shower electrode, a second radio frequency power source for adding radio frequency voltage, which has a second frequency f.sub.2 higher than the first frequency f.sub.1, at least to one of the suscepter and the shower electrode, a transformer whose primary side is connected to the first radio frequency power source and whose secondary side to first and second electrodes, and a low pass filter arranged in a circuit on the secondary side of the transformer, and serving to allow radio frequency voltage, which has the first frequency f.sub.

Abstract: A plasma processing apparatus has a process chamber and a pair of electrodes provided in the process chamber to oppose each other. An RF power supply outputs an RF power to be supplied to at least one of the pair of electrodes in the process chamber. A power detector detects an actual RF power to be applied to one of the electrodes in the process chamber. A controller controls the RF power output from the RF power supply to a predetermined value in accordance with the actual RF power detected by the power detector.

Abstract: An ethylene-.alpha.-olefin copolymer comprising ethylene and an .alpha.-olefin having from 3 to 10 carbon atoms, the copolymer having an .alpha.-olefin content of from 1.0 to 8.0 mol %, a density of from 0.900 to 0.930 g/cm.sup.3, and a melt flow rate of from 0.1 to 100 g/10 min., the programed-temperature thermogram of said copolymer as determined with a differential scanning calorimeter after being completely melted and then gradually cooled showing an endothermic peak (a) in a range of from 75.degree. to 100.degree. C. and an endothermic peak (b) in a range of from 120.degree. to 140.degree. C., with the ratio of an endotherm at the endothermic peak (b), .DELTA.Hb, to an endotherm at the endothermic peak (a), .DELTA.Ha, i.e., .DELTA.Hb/.DELTA.Ha, being from 0.03 to 2.0. The copolymer provides a film exhibiting excellent physical properties required for packaging film.

Abstract: A duplex transmission and reception system wherein a local oscillator of the receiver is dispensed with by using the output of a modulated transmission oscillator, with its modulation cancelled, in lieu of a receiver local oscillator. The transmitter modulation signal is adjusted by appropriate level correction and phase inversion. The modulated output of the transmission oscillator is itself applied to a modulator, where it is modulated by the adjusted modulation signal. This results in substantially cancelling out the modulation component of the transmission oscillator output. This modulation-cancelled signal is supplied to the mixer of a superheterodyne receiver as a local oscillator signal.

Abstract: A molded product of polypropylene having an isotactic pentad fraction of the boiling heptane insoluble portion of at least about 0.955 and a boiling heptane solubles content of about 2.0 to 9.0% by weight. The molded products include a stretched film, insulating materials for electrical equipment, etc.