Abstract: A method of metallizing ceramics in which, on a desired surface of a ceramic containing a silicon compound, a manganese-containing metal layer substantially free from any minute gaps with respect to the surface of the ceramics is formed, whereupon the resultant structure is heated to a temperature lower than the melting point of manganese to cause the reaction between manganese atoms and the silicon compound.As a method for forming the metal layer, there is a method wherein a deposited film is formed by vacuum-evaporating or sputtering manganese metal or a manganese alloy or a method wherein a melt of a manganese-copper, manganese-nickel or manganese-titanium alloy is formed on the surface of the ceramic under the application of a pressure. The metallizing method can be conducted at a lower temperature and in a shorter period of time compared with a conventional metallizing method.