Abstract: A power semiconductor module comprises a metal base, plural wiring substrates provided on said the base, a first wiring substrate of the wiring substrates having a power circuit portion including a power semiconductor device, and substrate containing portions having a resin portion in which one of the wiring substrates is contained. The one of the wiring substrates is positioned in self-alignment on the metal substrate on the basis of an inner wall of the resin portion of the substrate-containing portion.

Abstract: A power semiconductor module comprises a metal base, plural wiring substrates provided on said the base, a first wiring substrate of the wiring substrates having a power circuit portion including a power semiconductor device, and substrate containing portions having a resin portion in which one of the wiring substrates is contained. The one of the wiring substrates is positioned in self-alignment on the metal substrate on the basis of an inner wall of the resin portion of the substrate-containing portion.

Abstract: A power semiconductor module having a power circuit unit; a metal base for sealing the bottom of the module; an insulation substrate for electrically insulating the metal base from the power circuit unit; external input and output terminals connected to the power circuit unit; a resin case in which the external input and output terminals are inserted by integral molding; and a resin encapsulant material has been improved substantially in its reliability through provision of a nut integrally molded with the resin case for fastening the external input and output terminals with a screw; a metal base inserted in the resin case by integral molding; and a recess to receive the end of the screw located immediately below the nut, the recess extending without penetrating the resin case, and the metal base extending to an area below the recess.