Abstract: A turbine housing includes: a main body portion; an insertion hole, which is formed in the main body portion, and has one end opened to an outside of the main body portion of the turbine housing and another end communicated to the turbine scroll flow passage; a pipe member, which is formed separately from the main body portion, is arranged in the insertion hole, and has a communication flow passage having an inflow port as an inlet for exhaust gas and being opened to the turbine scroll flow passage; and step surfaces (step portions), which are formed on the pipe member and the insertion hole, and are opposed to each other.

Abstract: A semiconductor device includes: a semiconductor substrate having a main surface; a first insulating film formed in a convex shape and provided on the main surface of the semiconductor substrate; a first diffusion layer formed on the semiconductor substrate and provided to surround the first insulating film formed in a convex shape, the first diffusion layer being different in conductivity type from the semiconductor substrate; a first conductive layer formed so as to extend across the first insulating film formed in a convex shape, the first conductive layer forming a fuse element; and a second insulating film provided on the first conductive layer.

Abstract: The reliability of a semiconductor device is improved. A contact trench for coupling a field plate and a field limiting ring situated at the corner part of a semiconductor device is formed of a first straight line part and a second straight line part arranged line symmetrically with respect to the crystal orientation <011>. Respective one ends of the first straight line part and the second straight line part are coupled at the crystal orientation <011>, and the first straight line part and the second straight line part are set to extend in different directions from the crystal orientation <010> and the crystal orientation <011>.

Abstract: A semiconductor device and a method of manufacturing the same are provided so as to suppress an increase in the forward voltage of a first diode even if a driving signal is inputted to the gate electrode of an insulating gate bipolar transistor. An IGBT has a p-type body region. An anode region of the first diode has the same impurity region as the p-type body region of the IGBT. An anode region of a second diode is surrounded by an emitter groove and thus the anode region is separated from the p-type body region of the IGBT by the emitter groove.

Abstract: A ferrite composition composed of a main component including 26 to 46 mol % of an iron oxide in terms of Fe2O3, 4 to 14 mol % of a copper oxide in terms of CuO, 0 to 26 mol % of a zinc oxide in terms of ZnO, and a residue of 40.0 mol % or more of a nickel oxide in terms of NiO. The ferrite composition, with respect to 100 parts by weight of the main component, is also composed of a subcomponent including 0.8 to 10.0 parts by weight of a silicon compound in terms of SiO2, 1.0 to 15.0 parts by weight of a cobalt compound in terms of Co3O4, and 0.7 to 30.0 parts by weight of a bismuth compound in terms of Bi2O3. A value of the cobalt compound content in terms of Co3O4 divided by the silicon compound content in terms of SiO2 is 0.4 to 5.5.

Abstract: Provided is a ferrite composition composed of: a main component including 23.0 to 47.0 mole % of Fe compound in terms of Fe2O3, 3.0 to 16.0 mole % of Cu compound in terms of CuO, 4.0 to 39.0 mole % of Zn compound in terms of ZnO, 1.5 to 13.0 mole % of Si compound in terms of SiO2, and a residue of Ni compound; and a subcomponent including, with respect to 100 parts by weight of the main component, 0.1 to 8.0 parts by weight of Co compound in terms of Co3O4 and 0.25 to 5.00 parts by weight of Bi compound in terms of Bi2O3.

Abstract: According to one embodiment, a high-frequency semiconductor amplifier includes an input terminal, an input matching circuit, a high-frequency semiconductor amplifying element, an output matching circuit and an output terminal. The input terminal is inputted with a fundamental signal. The fundamental signal has a first frequency band and a first center frequency in the first frequency band. The input matching circuit includes an input end and an output end. The input end of the input matching circuit is connected to the input terminal. The high-frequency semiconductor amplifying element includes an input end and an output end. The input end of the high-frequency semiconductor amplifying element is connected to the output end of the input matching circuit. The high-frequency semiconductor amplifying element is configured to amplify the fundamental signal.

Abstract: Provided is a coil mounting structure for a device that comprises a primary coil to be supplied with an alternating current, and a secondary coil arranged facing the primary coil and configured to supply an electric power to a load provided in a housing by using an induced voltage generated by an electromagnetic field produced by the primary coil. The coil mounting structure comprises at least one mounting part provided in a region of the housing, the region facing the primary coil, and the at least one mounting part is configured to hold the secondary coil to the housing. The at least one mounting part comprises at least one gap area configured to interrupt a circuit generated by the at least one mounting part.

Abstract: A ferrite composition comprises a main component and a sub component. The main component is comprised of 25.0 to 49.8 mol % iron oxide in terms of Fe2O3, 5.0 to 14.0 mol % copper oxide in terms of CuO, 0 to 40.0 mol % zinc oxide in terms of ZnO, and a remaining part of nickel oxide. The sub component includes 0.2 to 5.0 wt % silicon oxide in terms of SiO2, 0.10 to 3.00 wt % bismuth oxide in terms of Bi2O3, and 0.10 to 3.00 wt % cobalt oxide in terms of Co3O4, with respect to the main component.

Abstract: A method for refining hot metal in a converter using a top-blowing lance having a refining powder supply channel, a combustion oxidizing gas supply channel, and a refining oxidizing gas supply channel that are separate from each other includes supplying at least one of a lime-based flux, iron oxide, and a combustible material as a refining powder from the refining powder supply channel to a surface of the hot metal using a fuel gas or a mixture of the fuel gas and an inert gas as a carrier gas while supplying a combustion oxidizing gas from the combustion oxidizing gas supply channel to form a flame below a leading end of the top-blowing lance, and supplying a refining oxidizing gas from the refining oxidizing gas supply channel to the surface of the hot metal.

Abstract: A ferrite composition includes a main component and an accessory component. The main component includes 18 to 30 mol % of iron oxide in terms of Fe2O3, 4 to 14 mol % of copper oxide in terms of CuO, 0 to 6 mol % of zinc oxide in terms of ZnO, and a remaining part of nickel oxide. The accessory component includes 0.30 to 1.83 pts.wt. of silicon compound in terms of SiO2, 2.00 to 10.00 pts.wt. of cobalt compound in terms of Co3O4, and 1.00 to 3.00 pts.wt. of bismuth compound in terms of Bi2O3 with respect to 100 pts.wt. of the main component. A cobalt compound content in terms of Co3O4 divided by a silicon compound content in terms of SiO2 is a value of 5.5 to 30.0.

Abstract: A ferrite composition includes a main component and an accessory component. The main component includes 43.0 to 51.0 mol % of iron oxide in terms of Fe2O3, 5.0 to 15.0 mol % of copper oxide in terms of CuO, 1.0 to 24.9 mol % of zinc oxide in terms of ZnO, and a remaining part of nickel oxide. The accessory component includes 0.2 to 3.0 pts. wt. of silicon compound in terms of SiO2, 3.0 to 8.0 pts. wt. of cobalt compound in terms of Co3O4 (excluding 3.0 pts. wt.), and 0.2 to 8.0 pts. wt. of bismuth compound in terms of Bi2O3 with respect to 100 pts. wt. of the main component.

Abstract: Composite electronic including coil, capacitor and intermediate parts, wherein coil part includes coil-conductor and magnetic-layer, capacitor part includes internal electrodes and dielectric-layer, which contains SrO—TiO2 or ZnO—TiO2 based oxide, intermediate part between coil and capacitor parts, intermediate part includes intermediate material layer, which contains ZnO, TiO2 and boron, ZnO contained in intermediate material layer 50-85 parts by mole and TiO2 contained the intermediate material layer 15-50 parts by mole when total content of ZnO and TiO2 in intermediate material layer is 100 parts by mole, content boron in intermediate material layer is 0.1-5.0 parts by weight of B2O3 when total of ZnO and TiO2 in intermediate material layer set to 100 parts by weight, part of ZnO and TiO2 intermediate material layer constitute ZnO—TiO2 compound, which in intermediate material layer is 50 wt % or more when total weight of ZnO and TiO2 in intermediate material layer is set to 100 wt %.

Abstract: It is an object of the present invention to provide an electromagnetic valve structure improved in terms of the responsiveness of the electromagnetic valve and helping to realize a more accurate flow rate control, and to provide a high-pressure fuel supply pump in which the same is mounted. There is provided a high-pressure fuel supply pump having an electromagnetic valve equipped with an electromagnetic coil generating an electromagnetic force for opening and closing a valve body provided between a fuel intake path and a pressure chamber, a movable member operated by the electromagnetic force, a housing accommodating the movable member, and a back-pressure chamber formed between the housing and the movable member, wherein a first fuel path causing the back-pressure chamber to communicate with the intake path passes the center axis of the movable member.

Abstract: To improve current detection performance of a sense IGBT particularly in a low current region in a semiconductor device equipped with a main IGBT and the sense IGBT used for current detection of the main IGBT. At a peripheral portion located at an outermost periphery of an active region surrounded by a dummy region within a sense IGBT cell, an n+-type semiconductor region is formed over an upper surface of a well of a floating state adjacent to a trench gate electrode embedded into a trench at an upper surface of a semiconductor substrate and applied with a gate voltage.

Abstract: A semiconductor device includes: a semiconductor substrate having a main surface; a first insulating film formed in a convex shape and provided on the main surface of the semiconductor substrate; a first diffusion layer formed on the semiconductor substrate and provided to surround the first insulating film formed in a convex shape, the first diffusion layer being different in conductivity type from the semiconductor substrate; a first conductive layer formed so as to extend across the first insulating film formed in a convex shape, the first conductive layer forming a fuse element; and a second insulating film provided on the first conductive layer.

Abstract: Provided is a sound absorbing panel that can satisfy the heat resistance properties and melting/dripping resistance properties required inside of a railway vehicle. A pier sound absorbing panel includes five sheets of first through fifth glass cloths that are stacked on an aluminum base plate. The edge section of the fifth glass cloth is affixed to the rear surface of the base plate using an adhesive, and the first through fourth glass cloths are fastened using staples. In other words, the first glass cloth and the base plate are fixed using an adhesive, and this adhesive is prevented from melting by the five sheets of the first through fifth glass cloths. The adhesive that fixes the edge section of the fifth glass cloth at the other surface of the base plate is prevented from melting by the five sheets of the first through fifth glass cloths and the base plate.

Abstract: A semiconductor device includes: a semiconductor substrate having a main surface; a first insulating film formed in a convex shape and provided on the main surface of the semiconductor substrate; a first diffusion layer formed on the semiconductor substrate and provided to surround the first insulating film formed in a convex shape, the first diffusion layer being different in conductivity type from the semiconductor substrate; a first conductive layer formed so as to extend across the first insulating film formed in a convex shape, the first conductive layer forming a fuse element; and a second insulating film provided on the first conductive layer.

Abstract: A communication terminal device includes: a wireless unit configured to transmit and receive a radio wave; an operating circuit configured to be used for operating the communication terminal device; a battery configured to supply electric power to the communication terminal device; a power supply circuit configured to control supply of electric power from the battery; and an arithmetic processing unit configured to detect an operation on the operating circuit and a duration time of the operation, detect an external environment of the communication terminal device through the wireless unit, and calculate a first remaining battery amount of the battery based on the operation, the duration time, and the external environment.

Abstract: Provided are a railroad vehicle that makes it possible to maintain the air tightness of a door and a plug door for a railroad vehicle. A second rail is provided parallel to a first rail in the longitudinal direction of a vehicle body above the leading edge side (door side) of a plug rail. The second rail supports the leading edge side of the plug rail. As a result, both edges of the plug rail are supported by the first rail and the second rail. Dangling of the leading edge side of the plug rail is thus prevented even when the plug distance (the distance that the door moves in the vehicle body width direction) is long. In this way, it is possible to block the doorway without leaving a gap using the door and to maintain the air tightness of the door.