Abstract: A sealed battery cell including an anti-explosion mechanism disposed between an electrode group and a top cover, and that deforms or cleaves due to elevation of internal pressure in the battery cell, the electrode group being comprised of a positive electrode and a negative electrode that are laminated together; wherein the anti-explosion mechanism includes a diaphragm, a connection plate welded to the diaphragm, and a connection lead welded to the connection plate; and the connection plate includes a thinner portion where a spot at which the connection lead is connected is formed as thin, and a thicker portion where the thinner portion is not formed, and a lower surface of the thinner portion is formed as coincident with a lower surface of the thicker portion, or as hollowed out from the lower surface of the thicker portion.

Abstract: A sealed battery cell including an anti-explosion mechanism disposed between an electrode group and a top cover, and that deforms or cleaves due to elevation of internal pressure in the battery cell, the electrode group being comprised of a positive electrode and a negative electrode that are laminated together; wherein the anti-explosion mechanism includes a diaphragm, a connection plate welded to the diaphragm, and a connection lead welded to the connection plate; and the connection plate includes a thinner portion where a spot at which the connection lead is connected is formed as thin, and a thicker portion where the thinner portion is not formed, and a lower surface of the thinner portion is formed as coincident with a lower surface of the thicker portion, or as hollowed out from the lower surface of the thicker portion.

Abstract: A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (?m) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)<25 ?s.

Abstract: Hillock is prevented when aluminum wiring is used in order to reduce line resistance in a display unit. The aluminum wiring is formed into multi-layer structure and each layer contains an element which is not solidly solubilized with aluminum. The element are preferably rare earth metal such as Nd, high-melting point transition metals such as Ta and noble metals such as Pd. Intermetallic compounds of aluminum and the element are educed at an interface of the multi-layer wiring and it is prevented that grains of aluminum are enlarged to form hillock.

Abstract: The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.

Abstract: A flexible display device includes: a flexible substrate which constitutes at least part of an envelope of the flexible display device; a plurality of pixels disposed on the flexible substrate; a group of terminals which is formed at a first portion on one surface of the flexible substrate and supplies signals to the plurality of pixels; and a reinforcing member attached to at least a second portion on another surface of the flexible substrate which faces the first portion across a thickness of the flexible substrate.

Abstract: A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (?m) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)<25 ?s.

Abstract: A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (?m) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)<25 ?s.

Abstract: The present invention provides an image display device, in which a top electrode is selectively separated by laser ablation for each scan line. As the laser, a third harmonic wave of YAG laser with a wavelength of 355 nm is used. By setting film thickness of the interlayer insulator 15 to 100 nm and film thickness of a field insulator 14 to 140 nm, reflective spectrum has the minimum value near a wavelength of 355 nm, This laser beam is projected from a top electrode 13 toward a substrate 10. A part of the projected laser beam 20 is reflected by the top electrode 13, but most of the laser beam pass through a field insulator 14 and the interlayer insulator 15 and is reflected by a bottom electrode 11. As the result of interference of these two reflection waves, the minimum value appears in reflection spectrum. In this case, the laser beam is mostly absorbed near boundary surface between the top electrode 13 and the interlayer insulator 15.

Abstract: Both a display device for displaying a uniform image on the front surface of a FED panel, and a method for manufacturing the same are disclosed. The display device includes a glass substrate which forms thereon signal wirings and MIM elements connected to thin-film scanning wirings, and an opposed substrate which forms thereon phosphor layers for performing light emissions by electron beams from the MIM elements. In the display device and the method for manufacturing the same, low-resistance wiring patterns formed separately on a film substrate are transferred onto the thin-film scanning wirings and upper electrodes. This transfer allows low-resistance scanning-wiring buses to be fixedly bonded thereon by electrically-conductive adhesive layers.

Abstract: An image display device using transistors each having a polycrystalline semiconductor layer constructed so that drain and source regions are fully activated, and a manufacturing method thereof. The polycrystalline semiconductor layer is so provided that impurity concentrations are easy to control in LDD regions . The image display device further uses transistors having a gate electrode on an upper surface of the semiconductor layer with an insulating film therebetween, a drain region formed on one side of the gate electrode, and a source region formed on another side of the gate electrode. An activated P-type impurity is added to the area underlying the gate electrode, and an activated N-type impurity is added to the area excluding the area underlying the gate electrode.

Abstract: A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (?m) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)<25 ?s.

Abstract: When a laser bean temporally modulated in amplitude by a modulator is shaped into a long and narrow beam by a beam shaper, the scanning-direction size of the long and narrow beam shaped by the beam shaper is selected to be in a range of from 2 to 10 microns, preferably in a range of from 2 to 4 microns and the scanning speed of the beam is selected to be in a range of from 300 to 1000 mm/s, preferably in a range of from 500 to 1000 m/s. As a result, damage of the silicon thin film can be suppressed while energy utilizing efficiency of the laser beam can be improved. Accordingly, laterally grown crystals (belt-like crystals) improved in throughput can be obtained on a required region of a substrate scanned and irradiated with the laser beam.

Abstract: A flexible display device includes: a flexible substrate which constitutes at least part of an envelope of the flexible display device; a plurality of pixels disposed on the flexible substrate; a group of terminals which is formed at a first portion on one surface of the flexible substrate and supplies signals to the plurality of pixels; and a reinforcing member attached to at least a second portion on another surface of the flexible substrate which faces the first portion across a thickness of the flexible substrate.

Abstract: The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.

Abstract: The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irraditation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.

Abstract: An image display device using transistors each having a polycrystalline semiconductor layer constructed so that drain and source regions are fully activated, and a manufacturing method thereof. The polycrystalline semiconductor layer is so provided that impurity concentrations are easy to control in LDD regions . The image display device further uses transistors having a gate electrode on an upper surface of the semiconductor layer with an insulating film therebetween, a drain region formed on one side of the gate electrode, and a source region formed on another side of the gate electrode. An activated P-type impurity is added to the area underlying the gate electrode, and an activated N-type impurity is added to the area excluding the area underlying the gate electrode.

Abstract: The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.

Abstract: An input data display device makes it easier to input properly correlated relative corrections for a number of parameters. Relative amounts by which each of a number of parameters is to be adjusted can be displayed on the screen in a manner which shows their ranges and possible correlation. The data are input when the operator touches spots which he selects on the display screen. The pressure of his finger causes data to be generated which represent those input positions. A calculation device calculates output-ready relative correction values for the various parameters based on these input position data. These values are transmitted to the connected device.

Abstract: A small-sized, lightweight portable telephone has a microphone mounted on a rotatable arm that can be released into a use position using only one hand, which is also grasping the telephone. Even if an excessive load is applied to the microphone arm, which is rotatably supported relative to the telephone main member, damage is prevented by a spring-loaded detent mechanism. The microphone arm has built in it a core member formed of a shape-memory alloy and constituted by a flexible casing, so that deformation can occur without permanent damage to the arm.