Abstract: Disclosed are a resin composition for sealing semiconductor devices, which contains a filler (A) of spherical fused silica having a maximum particle size of not larger than 45 &mgr;m and may contain metal impurities having a particle size of not larger than 53 &mgr;m; and a semiconductor device sealed with the resin composition.

Abstract: A sealed semiconductor chip having a surface film of a sealed resin composition, wherein the resin composition has a linear expansion coefficient of 60×10−6/K or less at a temperature equal to or less than its glass transition point and 140×10−6/K or less at a temperature equal to or higher than its glass transition point; a semiconductor-sealing resin composition for sealing a semiconductor chip, which has a linear expansion coefficient of 60×10−6/K or less at a temperature equal to or less than its glass transition point and 140×10−6/K or less at a temperature equal to or higher than its glass transition point; the sealed semiconductor chip is chip size and has high reliability; the semiconductor-sealing resin composition creates a good seal on chip wafers and has high reliability; and the chip wafers sealed with a surface film of the resin composition warp little.

Abstract: A semiconductor encapsulating resin composition which is powdery particles of a resin composition comprising an epoxy resin, a curing agent and an inorganic filler, and produced through a series of unit operations inclusive of melt-kneading and pulverization of a raw material mixture, wherein foreign metal having magnetic property originating from metal materials constituting production apparatuses used in the unit operations and contained in the powdery particles are selectively recovered and removed by a drum type metal classification-recovering apparatus. This semiconductor encapsulating resin composition provides a high reliability semiconductor device not containing magnetic foreign metal.

Abstract: A semiconductor device having enhanced reliability which is obtained by cutting a wafer encapsulated by an encapsulating material layer in such a manner that each of end faces of bumps for an external terminal is exposed, and a method of isolating a metal in an encapsulating material to allow measuring. The semiconductor device comprises a semiconductor element, bumps formed on a surface thereof for external terminals, and an encapsulating material layer, the encapsulating material layer being formed of an encapsulating material containing greater than 70% by weight and not greater than 90% by weight of fused silica, based on the total weight of the encapsulating material.

Abstract: An adhesive composition including: a main component comprising a resin material, a solvent for dissolving said main component, and a filler added to said main component, wherein said filler has a particle size so as to make a concavo-convex depth of a surface of said adhesive composition equal to or less than 15 .mu.m after said adhesive composition is applied to an adherend and dried in order to evaporate said solvent before a thermocompression process. The present invention also discloses a semiconductor device using the adhesive composition, an adhering method using the adhesive composition and a method for producing a semiconductor device using the adhesive composition.

Abstract: An epoxy resin composition for encapsulating semiconductors containing 5 to 50 parts by weight of a silicone-based flexibility imparting agent, 100 parts by weight of an epoxy resin containing at least two epoxy groups in one molecule thereof, 50 to 150 parts by weight of a curing resin including a phenolic resin, and 200 to 1,000 parts by weight of an inorganic filler.

Abstract: An epoxy resin composition contains an epoxy resin as a substratal resin and incorporates therein a polyallylphenol curing agent. The composition may also contain a polyphenol compound. The epoxy resin may have a naphthalene skeleton. The epoxy resin composition may also include a blend of two or more epoxy resins.

Abstract: A system for monitoring power, particularly a power distribution, of a nuclear reactor includes a plurality of neutron flux measuring units disposed in a core of the nuclear reactor for measuring neutron flux in the core and generating neutron flux signals. A unit, generally constructed by a process computer, for calculating a neutron flux distribution in the core in response to the neutron flux detection signals from the neutron flux measuring units, is provided. A unit for calculating a higher mode of the neutron flux distribution in accordance with results of calculations performed by the neutron flux distribution calculating unit, is provided. A filter calculating unit is provided for obtaining a filter for extracting characteristics of change of the neutron flux detection signal in response to the neutron flux detection signal and an input/output unit for transmitting the neutron flux detection signal filtered by the filter obtained by the filter calculating unit.

Abstract: In supervising the channel stability of a nuclear reactor, the thermal power and the coolant flow quantity in each fuel assembly are determined by signals produced by a plurality of neutron flux detectors installed in the nuclear reactor, and signals regarding other operating conditions of the reactor, and the thermo-hydrodynamic stability of each fuel assembly is judged by the above-mentioned thermal power and coolant flow quantity as well as the measured values of such parameters as inlet subcooling of the core and of the pressure in the reactor vessel. Or the stability limit of a selected one of the parameters is determined. Then, the threshold of the thermo-hydrodynamic stability or the stability limit is compared with the actually measured value thereof so as to determine a stability margin.

Abstract: A compressed exhaust gas containing nitrogen oxides discharged from a compressed absorption type nitric acid plant is treated by adding ammonia or an ammonia precursor to the gas and passing the gas through a NO.sub.x removing catalytic layer to an exhaust gas turbine wherein the temperature of the main flow of the exhaust gas in the zone from the point of which ammonia or an ammonia precursor is added to the outlet of the exhaust gas turbine is maintained at a temperature higher than T.degree. K = 10.sup.3 / (1.91 - 0.228 log P) [P : a sum of partial pressures of ammonia and nitrogen oxides (atm.)] and feeding an inert gas into the place of the zone in which the exhaust gas stagnates.