Abstract: In a solid state image device which has at least a horizontal CCD register, the horizontal CCD register is covered with a light shielding film which is formed by a resin material.

Abstract: In a CCD type solid state image pickup apparatus including two-dimensionally arranged photodiodes, a plurality of vertical transfer registers, and at least one horizontal transfer register, at least two different signal charges of each column of the photodiodes based upon different charge storing time periods are transferred to one of the vertical transfer registers, so that the different signal charges are combined with respective smear charges within the vertical transfer registers. The different signal charges combined with the smear charges and independent smear charges are transferred to the horizontal transfer register. One of the independent smear charges is subtracted from each of the different signal charges combined with the smear charges, and as a result, obtained different signal charges are summed to generate an output voltage.

Abstract: A solid-state image pick-up device has photo-diodes each connectable to every second transfer stage of vertical shift registers, and the other stages store false image signal components respectively contained in the electric charge packets; a smear image eliminating circuit subtracts the value of the false image signal component from the value of the associated electric charge packet so as to elimiante the smear image from the optical image represented by the electric charge packets.

Abstract: A solid state image pick-up device includes a signal generating unit for generating a reset signal and a transfer signal, a charge detecting section having a capacitor for storing a charge, a charge transfer section for outputting charges of n pixels (n is a positive integer more than 1) to the capacitor of the charge detecting section at a time in response to the transfer signal, a reset unit connected to the capacitor, for ejecting the charge from the capacitor of the charge detecting section in response to the reset signal, and an output amplifier unit for producing an output signal in response to the charges inputted from the charge transfer section to the capacitor of the charge detecting section.

Abstract: In a solid-state image pickup device comprises a solid-state image pickup section (10) including a substrate and a plurality of photoelectric converting sections formed on the substrate, the photoelectric converting sections accumulates, in response to incident light, electric charges during a controllable accumulating time interval in each frame period as signal charges in synchronism with a frame rate. Connected to the substrate, electronic shutter means discards disused charges during a discarding time interval in the frame period from the photoelectric converting sections to the substrate. The discarding time interval is equal to a difference between the frame period and the controllable accumulating time interval. Connected to the solid-state image pickup section, a timing pulse generating section (20) controls the controllable accumulating time interval.

Abstract: It is the object of the invention to expand a band width of an amplifier by effectively decreasing wiring capacitances of the amplifier formed in a semiconductor chip. The semiconductor chip is implemented in a package, and an output signal of the amplifier (not shown) formed in the semiconductor chip is supplied to the input terminal of an external buffer amplifier. In various signal paths which connect the output amplifier to the buffer amplifier, a signal wire, which connects the output terminal of the output amplifier to an output pad formed in the circumference of the chip, is provided with a shield wire thereunder. The shield wire is supplied with the output signal of the buffer amplifier. Since the phase and the amplitude of the voltage supplied by the buffer amplifier is nearly the same as those of the signal wire, the wiring capacitance between both wires is equivalently zero.

Abstract: A solid state image sensor and an imaging method using a spatial pixel offset, in which in each field, charges of pixels of solid state imaging devices for green color and red/blue colors are separately summed and mass center of the summed charges for the green color is made to be coincident with that for the red/blue colors, enabling to form an aperture form without degrading resolution and to improve sensitivity and dynamic range without resolution drop.

Abstract: A solid state imaging apparatus includes a solid state imager of an interline charge transfer device type, including a number of photoelectric conversion cells arranged in the form of matrix, and a reading gate provided between each of photoelectric conversion cells in each one column and one adjacent vertical transfer register and controlled for reading an electric charge stored in one of each N photoelectric conversion cells to the adjacent vertical transfer register. A memory is connected to receive an image signal sequentially outputted from the solid state imager, and has a capacity corresponding to a double of the number of the photoelectric conversion cells of the solid state imager.

Abstract: An image pickup system for use as a stationary camera or the like utilizes a solid state image pickup device including a matrix of photoelectric conversion cells. A vertical transfer serial shift register is located adjacent each column of photoelectric conversion cells and is connected in parallel thereto. A first horizontal transfer serial shift register is coupled in parallel to the respective final stages of the vertical transfer serial shift registers. A second horizontal serial shift register is coupled in parallel to the respective first stages of the vertical serial shift registers. A feedback path is formed between an output of the first horizontal serial shift register and an input of the second horizontal serial shift register.

Abstract: In a method of driving a solid-state imaging element, an operation of reading charges from a photoelectric conversion element to a vertical transfer register of an imaging region and an operation of clearing charges by discharging them to an overflow drain are performed plurality of time within one field period.