Patents by Inventor Yukio Tojo
Yukio Tojo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8664013Abstract: In a continuous processing system, a controller of a heat treatment apparatus calculates a weight of each layer from input target film thicknesses of a phosphorous-doped polysilicon film (D-poly film) and an amorphous silicon film (a-Si film), and calculates activation energy of stacked films based on the calculated weight and activation energy. The controller prepares a stacked film model based on the calculated activation energy and a relationship of a temperature of each zone and film thicknesses of the D-poly film and the a-Si film, and calculates an optimum temperature of each zone by using the prepared stacked film model. The controller controls power controllers of heaters to set a temperature in a reaction tube to be the calculated temperature of each zone and forms stacked films on a semiconductor wafer by controlling a pressure adjusting unit, flow rate adjusting units, etc.Type: GrantFiled: March 14, 2013Date of Patent: March 4, 2014Assignee: Tokyo Electron LimitedInventors: Yuichi Takenaga, Yukio Tojo
-
Patent number: 8652973Abstract: A processing method for forming a structure including an amorphous carbon film includes performing a preliminary treatment of removing water from a surface of the underlying layer by heating the inside of the reaction chamber at a preliminary treatment temperature of 800 to 950° C. and supplying a preliminary treatment gas selected from the group consisting of nitrogen gas and ammonia gas into the reaction chamber while exhausting gas from inside the reaction chamber; and, then performing main CVD of forming an amorphous carbon film on the underlying layer by heating the inside of the reaction chamber at a main process temperature and supplying a hydrocarbon gas into the reaction chamber while exhausting gas from inside the reaction chamber.Type: GrantFiled: May 31, 2012Date of Patent: February 18, 2014Assignee: Tokyo Electron LimitedInventors: Mitsuhiro Okada, Yukio Tojo
-
Patent number: 8592324Abstract: A method for forming a laminated structure including an amorphous carbon film on an underlying layer includes forming an initial layer containing Si—C bonds on a surface of the underlying layer, by supplying an organic silicon gas onto the underlying layer; and forming the amorphous carbon film by thermal film formation on the underlying layer with the initial layer formed on the surface thereof, by supplying a film formation gas containing a hydrocarbon compound gas onto the underlying layer.Type: GrantFiled: February 2, 2011Date of Patent: November 26, 2013Assignee: Tokyo Electron LimitedInventors: Mitsuhiro Okada, Yukio Tojo
-
Publication number: 20130260572Abstract: In a continuous processing system, a controller of a heat treatment apparatus calculates a weight of each layer from input target film thicknesses of a phosphorous-doped polysilicon film (D-poly film) and an amorphous silicon film (a-Si film), and calculates activation energy of stacked films based on the calculated weight and activation energy. The controller prepares a stacked film model based on the calculated activation energy and a relationship of a temperature of each zone and film thicknesses of the D-poly film and the a-Si film, and calculates an optimum temperature of each zone by using the prepared stacked film model. The controller controls power controllers of heaters to set a temperature in a reaction tube to be the calculated temperature of each zone and forms stacked films on a semiconductor wafer by controlling a pressure adjusting unit, flow rate adjusting units, etc.Type: ApplicationFiled: March 14, 2013Publication date: October 3, 2013Applicant: TOKYO ELECTRON LIMITEDInventors: Yuichi TAKENAGA, Yukio TOJO
-
Publication number: 20120247511Abstract: A method for cleaning a thin film forming apparatus by removing extraneous matter attached to an interior of the thin film forming apparatus after supplying a treatment gas into a reaction chamber of the thin film forming apparatus and forming a thin film on an object to be processed, the method including: supplying a cleaning gas including fluorine gas, hydrogen fluoride gas, and chlorine gas into the reaction chamber heated to a predetermined temperature to remove the extraneous matter.Type: ApplicationFiled: March 27, 2012Publication date: October 4, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Mitsuhiro OKADA, Yukio TOJO, Kenji TAGO, Kazuaki NISHIMURA
-
Publication number: 20120238107Abstract: A processing method for forming a structure including an amorphous carbon film includes performing a preliminary treatment of removing water from a surface of the underlying layer by heating the inside of the reaction chamber at a preliminary treatment temperature of 800 to 950° C. and supplying a preliminary treatment gas selected from the group consisting of nitrogen gas and ammonia gas into the reaction chamber while exhausting gas from inside the reaction chamber; and, then performing main CVD of forming an amorphous carbon film on the underlying layer by heating the inside of the reaction chamber at a main process temperature and supplying a hydrocarbon gas into the reaction chamber while exhausting gas from inside the reaction chamber.Type: ApplicationFiled: May 31, 2012Publication date: September 20, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Mitsuhiro Okada, Yukio Tojo
-
Patent number: 8222162Abstract: A batch processing method for forming a structure including an amorphous carbon film includes performing a preliminary treatment of removing water from a surface of the underlying layer by heating the inside of the reaction chamber at a preliminary treatment temperature of 800 to 950° C. and supplying a preliminary treatment gas selected from the group consisting of nitrogen gas and ammonia gas into the reaction chamber while exhausting gas from inside the reaction chamber; and, then performing main CVD of forming an amorphous carbon film on the underlying layer by heating the inside of the reaction chamber at a main process temperature and supplying a hydrocarbon gas into the reaction chamber while exhausting gas from inside the reaction chamber.Type: GrantFiled: June 2, 2010Date of Patent: July 17, 2012Assignee: Tokyo Electron LimitedInventors: Mitsuhiro Okada, Yukio Tojo
-
Publication number: 20110195580Abstract: A method for forming a laminated structure including an amorphous carbon film on an underlying layer includes forming an initial layer containing Si—C bonds on a surface of the underlying layer, by supplying an organic silicon gas onto the underlying layer; and forming the amorphous carbon film by thermal film formation on the underlying layer with the initial layer formed on the surface thereof, by supplying a film formation gas containing a hydrocarbon compound gas onto the underlying layer.Type: ApplicationFiled: February 2, 2011Publication date: August 11, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Mitsuhiro OKADA, Yukio TOJO
-
Publication number: 20100311251Abstract: A batch processing method for forming a structure including an amorphous carbon film includes performing a preliminary treatment of removing water from a surface of the underlying layer by heating the inside of the reaction chamber at a preliminary treatment temperature of 800 to 950° C. and supplying a preliminary treatment gas selected from the group consisting of nitrogen gas and ammonia gas into the reaction chamber while exhausting gas from inside the reaction chamber; and, then performing main CVD of forming an amorphous carbon film on the underlying layer by heating the inside of the reaction chamber at a main process temperature and supplying a hydrocarbon gas into the reaction chamber while exhausting gas from inside the reaction chamber.Type: ApplicationFiled: June 2, 2010Publication date: December 9, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Mitsuhiro OKADA, Yukio Tojo
-
Patent number: 7727296Abstract: A collecting unit is disposed on an exhaust passage of a semiconductor processing apparatus to collect by-products contained in an exhaust gas. The collecting unit includes a trap body detachably disposed inside a casing and configured to collect a part of the by-products. The trap body includes fins arrayed in a flow direction of the exhaust gas and having a surface on which a part of the by-products is deposited and trapped. The collecting unit further includes a receiving mechanism disposed inside the casing and configured to receive a part of the by-products that peels off from the trap body or an inner surface of the casing to prevent this part from being deposited on a bottom of the casing. The receiving mechanism is configured to allow a part of the by-products held thereon to be in contact with a cleaning gas from above and from below.Type: GrantFiled: October 5, 2007Date of Patent: June 1, 2010Assignee: Tokyo Electron LimitedInventors: Yukio Tojo, Naotaka Noro, Yoshiyuki Fujita, Yuji Ito
-
Publication number: 20080104935Abstract: A collecting unit is disposed on an exhaust passage of a semiconductor processing apparatus to collect by-products contained in an exhaust gas. The collecting unit includes a trap body detachably disposed inside a casing and configured to collect a part of the by-products. The trap body includes fins arrayed in a flow direction of the exhaust gas and having a surface on which a part of the by-products is deposited and trapped. The collecting unit further includes a receiving mechanism disposed inside the casing and configured to receive a part of the by-products that peels off from the trap body or an inner surface of the casing to prevent this part from being deposited on a bottom of the casing. The receiving mechanism is configured to allow a part of the by-products held thereon to be in contact with a cleaning gas from above and from below.Type: ApplicationFiled: October 5, 2007Publication date: May 8, 2008Inventors: Yukio Tojo, Naotaka Noro, Yoshiyuki Fujita, Yuji Ito
-
Publication number: 20050270405Abstract: The surface of the image pickup device 21 is covered by a transparent conductive member 26 that is made of, for example, a transparent conductive past resin and that is electrically connected to a ground potential GND. By having this arrangement, it is possible to electromagnetically shield the image pickup device 30 itself. The transparent conductive member 26 has one or more openings in the parts that correspond to the conductive unit of the signal wiring portion (the electrodes 23; A to D, F, and G, and the wiring patterns 25 that are connected thereto), out of the electrodes 23 and the wiring patterns 25 provided on the front surface side of the image pickup device body unit 21.Type: ApplicationFiled: June 3, 2005Publication date: December 8, 2005Inventors: Yoshinori Tanida, Hiroaki Fukuda, Yukio Tojo
-
Patent number: 6925731Abstract: A cleaning process for cleaning a thermal processing apparatus includes: a heating step of heating an interior of a reaction tube at 300° C., and a cleaning step of removing deposits deposited in the thermal processing apparatus. In the cleaning step, a cleaning gas containing fluorine gas, chlorine gas and nitrogen gas is supplied into the interior of the reaction tube heated at 300° C. to remove silicon nitride so to clean an interior of the thermal processing apparatus.Type: GrantFiled: February 20, 2002Date of Patent: August 9, 2005Assignee: Tokyo Electron LimitedInventors: Kazuaki Nishimura, Yukio Tojo, Phillip Spaull, Kenji Tago
-
Publication number: 20050090123Abstract: A cleaning process for cleaning a thermal processing apparatus includes: a heating step of heating an interior of a reaction tube at 300° C., and a cleaning step of removing deposits deposited in the thermal processing apparatus. In the cleaning step, a cleaning gas containing fluorine gas, chlorine gas and nitrogen gas is supplied into the interior of the reaction tube heated at 300° C. to remove silicon nitride so to clean an interior of the thermal processing apparatus.Type: ApplicationFiled: February 20, 2002Publication date: April 28, 2005Inventors: Kazuaki Nishimura, Yukio Tojo, Phillip Spaull, Kenji Tago
-
Patent number: 6635310Abstract: A thermal processing method of the invention includes; a loading step of loading an object to be processed into a processing container, the object having a surface provided with a silicon film having a minutely irregular profile; and a doping step of introducing phosphorus atoms in the silicon film as impurities, by using PH3 gas as a doping gas while maintaining a temperature of 550 to 750° C.Type: GrantFiled: April 26, 2001Date of Patent: October 21, 2003Assignee: Tokyo Electron LimitedInventors: Hitoshi Kato, Yoshiyuki Fujita, Yukio Tojo, Toshitake Tsuda
-
Patent number: 5315402Abstract: A video signal recording/reproducing device has at least a frequency modulating unit which FM modulates information to be recorded on an optical disk memory, a laser driving pulse generating unit for generating a laser driving pulse derived from the frequency-modulated signal generated by the frequency modulating unit and for modifying the duty factor of the laser driving pulse in accordance with the linear velocity of the optical disk memory where recording is taking place; and a recording unit for controlling the laser power during recording to an optimum value in accordance with the linear velocity of the optical disk memory where recording is taking place. This arrangement enables reduction of the minimal length of recording bits resulting in reproduced signals of a level sufficient for obtaining reproduced images of a fine quality addition enables increase of the recording capacity of the optical disk memory.Type: GrantFiled: August 25, 1992Date of Patent: May 24, 1994Assignee: Sharp Kabushiki KaishaInventors: Yasuyuki Ito, Takeshi Kawabe, Yukio Tojo, Takeo Takase