Abstract: This invention relates to a DNA containing uncoupling protein-2 (UCP-2) promoter region containing the regulator sequence, a transformant transformed with the DNA, a method for screening a compound or its salt that promotes or inhibits UCP-2 promoter activity characterized by use of the transformant, a method for screening an antiobestic drug, an antidiabetic drug, a depressor, an antihyperlipemic drug, and an antipyretic drug characterized by use of the transformant, a kit for screening a compound or its salt that promotes or inhibits UCP-2 promoter activity characterized by use of the transformant, and pharmaceutical composition containing a compound or its salt that promotes or inhibits UCP-2 promoter activity obtained using the screening method or the screening kit.

Abstract: A hybridoma which produces a monoclonal antibody against an endocrine disruptor or its degradation product obtained by fusing spleen cells or lymphoid cells of an animal having been immunized with a complex of the endocrine disruptor or a compound similar thereto with a protein with myeloma cells; the monoclonal antibody produced thereby; and a method for immunologically detecting the endocrine disruptor or its degradation product and a method for immunologically concentrating the same each by using the above antibody.

Abstract: A hybridoma obtainable by fusing a spleen cell or lymphocyte of an animal immunized by a complex of a surfactant compound for synthetic detergent and protein with a myeloma cell, which produces a monoclonal antibody against the compound or its degradation product. A monoclonal antibody against a surfactant compound for synthetic detergent or its degradation product which is produced by the hybridoma, a kit for immunoassay of detergent, its degradation product or a mixture thereof containing as an essential constitutional component the monoclonal antibody, and an immunoassay method, in particular, ELISA of detergent, its degradation product or a mixture thereof in a specimen by reacting the specimen with the monoclonal antibody supported on a carrier and the detergent, its degradation product or the mixture thereof labeled with a labeling agent are also disclosed.

Abstract: Disclosed are an antibody which have a binding activity to human betacellulin protein or a mutein thereof with specificity; especially a monoclonal antibody which does not have cross reactitivity with human epidermal growth factor (EGF) and human transforming growth factor a (TGF-&agr;), belongs to the immunoglobulin class of IgG, and,specifically binds to human betacellulin protein to neutralize biological activity thereof; a hybridoma for producing the monoclonal antibody; and a method for producing the monoclonal antibody. Said monoclonal antibody neutralizes biological activity of a human BTC protein, and bind to the protein with high sensitivity and specificity, so that they can be used as a therapeutic agent for diseases such as arterial sclerosis and cancers, and also used as a reagent for assaying the human BTC protein or a mutein thereof and as a diagnostic agent for diabetes or complications thereof.

Abstract: A semiconductor microstructure is formed by forming a groove having a surface of a side wall and a surface of a bottom, and depositing a semiconductor layer in the groove so that a width of the semiconductor layer is defined by the surface of the side wall.

Abstract: The present invention provides a hybrid monoclonal antibody having specificities against fibrin and thrombolytic substance, a polydoma which produces said antibody and thrombolytic agent comprising said antibody and thrombolytic substance which is immunologically coupled thereto, and methods of using said antibody in combination with thrombolytic substance for lysis or removal of thrombi.

Abstract: First and second junctions are set so as to control electric fields applied to an active layer, independent from each other, and the electric field applied by the first junction controls exciting conditions while the electric field applied by the second junction drives the active layer so as to simplify a drive circuit for an optical semiconductor device.

Abstract: A first method of forming a fine structure on a compound semiconductor for providing vertical side wall surfaces of a wire is as follows:One side wall surface of a wire is formed by applying an ion beam for etching with a predetermined incident angle on the side of this side wall surface to a surface of a compound semiconductor layer having a multiquantum well structure, covered with a first mask to from this side wall surface; and then, the other side wall surface is formed by applying the ion beam with the predetermined incident angle from the side of the other side wall surface to be formed after removal of the first mask and forming a second mask for forming the other side wall surface. In a second method, a third mask having a stripe pattern is formed on the surface of the compound semiconductor; one side of the wire is formed by first etching with the slantwise incident ion beam. The second etching is also formed similarly by the ion beam with the one side wall surface is protected.

Abstract: In a method for producing a fine semiconductor structure, a first layer is formed on a second layer, an etching-resistant mask is formed on the first layer, the second layer is etched in an etchant to form a desired shape thereof, a composition of the first layer is different from a composition of the second layer, and at least one of boundary surfaces of the etching-resistant mask and the first layer facing to each other is substantially prevented from including another substance which is different from both of the etching-resistant mask and the first layer.

Abstract: A testing sample is formed in a three-story structure consisting of a photo-resist 13, a silicon dioxide film 12, and a GaAs substrate 11. The pattern of the photo-resist 13 is transferred onto the silicon dioxide film 12 by effecting the photo-resist 13 as a mask. Thus obtained silicon dioxide film mask 14 and the GaAs substrate 11 are processed in compliance with a reactive ion beam etching method; that is, the silicon dioxide film mask 14 and the GaAs substrate 11 are irradiated by the chlorine ion beam 15. The silicon dioxide film and the GaAs substrate are gradually etched by the irradiation of the chlorine ion beam 15. In this case, the etching is differently developed in two regions. In one region which is not covered by the mask, the etching advances uniformly in a normal direction with respect to the GaAs substrate at a certain etching rate.

Abstract: The present invention discloses, a bispecific monoclonal antibody to an ansamitocin derivative and a target antigen, particularly tumor-associated antigen, which can carry an ansamitocin derivative in a stable and inactive form at other sites than the target and release the active-form ansamitocin derivative at the target site, so that an anticancer agent having excellent durability and selectivity with little adverse action can be prepared using the bispecific monoclonal antibody and ansamitocin derivatives.

Abstract: The present invention discloses, a bispecific monoclonal antibody to an ansamitocin derivative and a target antigen, particularly tumor-associated antigen, which can carry an anasamitocin derivative in a stable and inactive form at other sites than the target and release the active-form ansamitocin derivative at the target site, so that an anticancer agent having excellent durability and selectivity with little adverse action can be prepared using the bispecific monoclonal antibody and ansamitocin derivatives.

Abstract: The present invention provides human B lymphoblastoid cell line AC-33, which is novel, and excellent in proliferativity and fusion capability, and works well as the parental line for obtaining a human monoclonal antibody-producing hybridoma. Said hybridoma possesses excellent proliferativity and stable antibody productivity, thus permitting efficient antibody production over a long period.

Abstract: In the thermal cracking of or heating of hydrocarbons, for example naphtha, a carbonization reaction incidentally takes place due to the fact that Ni, Fe and Co contained in, for example, the conduits of the thermal cracking apparatus have a catalytically carbonizing action. The aim of the present invention is to effectively suppress carbon deposition promoted by these elements, to provide for the incorporation of an inhibitor element, e.g. Li, Na, Ba, Be, Ca, Mg or their oxides, into the heat-resistant alloy, and to form on the surface of this alloy a carbon deposition suppressing layer which comprises an inhibitor element.

Abstract: The substrate of a gallium nitride light-emitting diode is made rough at given positions on the surface thereof, or an insulating film strip pattern is attached on the surface of the substrate prior to growing an n-type conductive gallium nitride layer and a semi-insulating gallium nitride layer thereon. As a result, high conductivity regions are formed in the semi-insulating layer at positions corresponding to the rough surfaces or the insulating film strip pattern in such a manner that each of the high conductivity region extends from the n-type conductive layer to the upper surface of the semi-insulating layer so as to function as a conductor to be connected to an electrode. In the same manner similar high conductive regions are made along kerf portions in a diode wafer, preventing each diode chip from being damaged on cutting.

Abstract: An electroluminescent semiconductor device comprising bodies of conductive and resistive crystalline gallium nitride (GaN) which are successively epitaxially deposited on a surface of a heat-treated sapphire substrate, and a body of insulative crystalline gallium nitride epitaxially deposited on the resistive body.

Abstract: In the thermal cracking of or heating of hydrocarbons, for example naphtha, a carbonization reaction incidentally takes place due to the fact that Ni, Fe and Co contained in, for example, the conduits of the thermal cracking apparatus have a catalytically carbonizing action. The aim of the present invention is to effectively suppress carbon deposition promoted by these elements, to provide for the incorporation of an inhibitor element, e.g. Li, Na, Ba, Be, Ca, Mg or their oxides, into the heat-resistant alloy, and to form on the surface of this alloy a carbon deposition suppressing layer which comprises an inhibitor element.

Abstract: An electroluminescent semiconductor device comprising bodies of conductive and resistive crystalline gallium nitride (GaN) which are successively epitaxially deposited on a surface of a heat-treated sapphire substrate, and a body of insulative crystalline gallium nitride epitaxially deposited on the resistive body.

Abstract: The substrate of a gallium nitride light-emitting diode is made rough at given positions on the surface thereof, or an insulating film strip pattern is attached on the surface of the substrate prior to growing an n-type conductive gallium nitride layer and a semi-insulating gallium nitride layer thereon. As a result, high conductivity regions are formed in the semi-insulating layer at positions corresponding to the rough surfaces or the insulating film strip pattern in such a manner that each of the high conductivity region extends from the n-type conductive layer to the upper surface of the semi-insulating layer so as to function as a conductor to be connected to an electrode. In the same manner similar high conductive regions are made along kerf portions in a diode wafer, preventing each diode chip from being damaged on cutting.